TN6714A Datasheet, Equivalent, Cross Reference Search

TN6714A NZT6714CECBTO-226CSOT-223BENPN General Purpose AmplifierThis device is designed for general purpose medium poweramplifiers and switches requiring collector currents to 1.5 A.Sourced from Process 37.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 VVCBO Collector-Base Voltage 40 VV

TN6718AC TO-226 B E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0A. Sourced from Process 39. See TN6717A for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value Units100 VVCEO Collector-Emitter Voltage100 VVCBO Collector-Ba

TN6717A NZT6717CECBTO-226CB SOT-223ENPN General Purpose AmplifierThis device is designed for general purpose medium poweramplifiers and switches requiring collector currents to 1.0 A.Sourced from Process 39.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 80 VVCBO Collector-Base Voltage 80 VVE

TN6716AC TO-226 B E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A. Sourced from Process 38. See TN6715A for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value Units60 VVCEO Collector-Emitter Voltage60 VVCBO Collector-Base

Discrete POWER & SignalTechnologiesTN6719ATO-226CBENPN High Voltage AmplifierThis device is designed for use in high voltage applications . Sourced from Process 48. See MPSA42 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 300 VV Collector-Base Voltage 300 VCBOVEBO Emitter-Ba

TN6715A NZT6715CECBTO-226CB SOT-223ENPN General Purpose AmplifierThis device is designed for general purpose medium poweramplifiers and switches requiring collector currents to 1.2 A.Sourced from Process 38.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collector-Base Voltage 50 VVE

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Spec. No. : C823A3 Issued Date : 2006.10.16 CYStech Electronics Corp.Revised Date : Page No. : 1/5 NPN Epitaxial Planar Transistor BTN6718A3Description The BTN6718A3 is designed for general purpose medium power amplifier and switching applications. Features Low collector saturation voltage High breakdown voltage, V =100V (min.) CEO High collector current,

Spec. No. : C319D3 Issued Date : 2008.05.13 CYStech Electronics Corp.Revised Date : Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTN6718D3Features High breakdown voltage, BV 100V CEO Large continuous collector current capability, I =1A(DC) C(MAX) Low collector saturation voltage Pb-free package Symbol Outline BTN6718D3 TO-126ML