SD1391 Todos los transistores

 ..1. Size:56K  st
 sd1391.pdf

SD1391 RF & MICROWAVE TRANSISTORS UHF BASE STATION APPLICATIONS P RELIMINARY DATA .470 MHZ .24 VOLTS .EFFICIENCY 50% MIN. .POUT 15 W WITH 11.0 dB MIN. GAIN = .CLASS AB .COMMON EMITTER .2 30 x .3 60 6LF L (M14 2) ORDE R CODE BRANDING SD1391 SD1391 PIN CONNECTION DESCRIPTION The SD1391 is a gold metallized NPN planar tran- sistor using diffused emitter ballast resistors for reli

 0.1. Size:212K  inchange semiconductor
 2sd1391.pdf

isc Silicon NPN Power Transistor 2SD1391 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150

 9.1. Size:73K  st
 sd1398.pdf

SD1398 RF & MICROWAVE TRANSISTORS 850-960 MHz APPLICATIONS .850 - 960 MHZ .24 VOLTS .COMMON EMITTER .OVERLAY GEOMETRY .GOLD METALLIZATION .P 6.0 W MIN. WITH 10.0 dB GAIN = OUT .230 6LFL (M142) epoxy sealed ORDER CODE BRANDING SD1398 SD1398 PIN CONNECTION DESCRIPTION The SD1398 is a gold metallized epitaxial silicon NPN transistor designed for high linearity Class AB operation

 9.2. Size:50K  st
 sd1390.pdf

SD1390 RF & MICROWAVE TRANSISTORS UHF BASE STATION APPLICATIONS P RELIMINARY DATA .470 MHZ .24 VOLTS .P 1.5 W WITH 13.0 dB MIN. GAIN OUT = .CLASS A .COMMON EMITTER .POWER SATURATION 2.2 W MIN. .280 x 4LSL (M123) ORDE R CODE BRANDING SD1390 SD1390 PIN CONNECTION DESCRIPTION The SD1390 is a gold metallized NPN planar tran- sistor using diffused emitter ballast resistors for reli

 9.3. Size:43K  sanyo
 2sd1399.pdf

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 2sd1395.pdf

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 2sd1396.pdf

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 2sd1392.pdf

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 2sd1397.pdf

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR 2SD1397 COLOR TV HORIZONTAL OUTPUT APPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) SC-65 High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current

 9.8. Size:204K  inchange semiconductor
 2sd1393.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1393 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 0.8A FE C Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose am

 9.9. Size:215K  inchange semiconductor
 2sd1398.pdf

isc Silicon NPN Power Transistor 2SD1398 DESCRIPTION High Breakdown Voltage High Switching Speed Built-in damper diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base V

 9.10. Size:215K  inchange semiconductor
 2sd1399.pdf

isc Silicon NPN Power Transistor 2SD1399 DESCRIPTION High Breakdown Voltage V = 1500V (Min) CBO High Switching Speed Built-in damper diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

 9.11. Size:204K  inchange semiconductor
 2sd1394.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1394 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High DC Current Gain h = 2000(Min) @I = 1.5A FE C Low Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amp

 9.12. Size:207K  inchange semiconductor
 2sd1390.pdf

isc Silicon NPN Power Transistor 2SD1390 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150

 9.13. Size:205K  inchange semiconductor
 2sd1395.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1395 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 2.5A FE C Low Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amp

 9.14. Size:214K  inchange semiconductor
 2sd1397.pdf

isc Silicon NPN Power Transistor 2SD1397 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

 9.15. Size:214K  inchange semiconductor
 2sd1396.pdf

isc Silicon NPN Power Transistor 2SD1396 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage