SD1391 Datasheet, Equivalent, Cross Reference Search
Type Designator: SD1391
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 29 W
Maximum Collector-Base Voltage |Vcb|: 48 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 3.5 V
Maximum Collector Current |Ic max|: 2.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Collector Capacitance (Cc): 24 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: M142
SD1391 Transistor Equivalent Substitute - Cross-Reference Search
SD1391 Datasheet (PDF)
sd1391.pdf
SD1391RF & MICROWAVE TRANSISTORSUHF BASE STATION APPLICATIONSP RELIMINARY DATA.470 MHZ.24 VOLTS.EFFICIENCY 50% MIN..POUT 15 W WITH 11.0 dB MIN. GAIN=.CLASS AB.COMMON EMITTER.2 30 x .3 60 6LF L (M14 2)ORDE R CODE BRANDINGSD1391 SD1391PIN CONNECTIONDESCRIPTIONThe SD1391 is a gold metallized NPN planar tran-sistor using diffused emitter ballast resistors forreli
2sd1391.pdf
isc Silicon NPN Power Transistor 2SD1391DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line-operated horizontal deflection outputapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150
sd1398.pdf
SD1398RF & MICROWAVE TRANSISTORS850-960 MHz APPLICATIONS.850 - 960 MHZ.24 VOLTS.COMMON EMITTER.OVERLAY GEOMETRY.GOLD METALLIZATION.P 6.0 W MIN. WITH 10.0 dB GAIN=OUT.230 6LFL (M142)epoxy sealedORDER CODE BRANDINGSD1398 SD1398PIN CONNECTIONDESCRIPTIONThe SD1398 is a gold metallized epitaxial siliconNPN transistor designed for high linearity ClassAB operation
sd1390.pdf
SD1390RF & MICROWAVE TRANSISTORSUHF BASE STATION APPLICATIONSP RELIMINARY DATA.470 MHZ.24 VOLTS.P 1.5 W WITH 13.0 dB MIN. GAINOUT =.CLASS A.COMMON EMITTER.POWER SATURATION 2.2 W MIN..280 x 4LSL (M123)ORDE R CODE BRANDINGSD1390 SD1390PIN CONNECTIONDESCRIPTIONThe SD1390 is a gold metallized NPN planar tran-sistor using diffused emitter ballast resistors forreli
2sd1397.pdf
NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR2SD1397COLOR TV HORIZONTAL OUTPUTAPPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) SC-65 High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current
2sd1393.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1393DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 0.8AFE CLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose am
2sd1398.pdf
isc Silicon NPN Power Transistor 2SD1398DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedBuilt-in damper diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolour TV receivers.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base V
2sd1399.pdf
isc Silicon NPN Power Transistor 2SD1399DESCRIPTIONHigh Breakdown Voltage: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in damper diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
2sd1394.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1394DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain: h = 2000(Min) @I = 1.5AFE CLow Saturation VoltageFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amp
2sd1390.pdf
isc Silicon NPN Power Transistor 2SD1390DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line-operated horizontal deflection outputapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150
2sd1395.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1395DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 2.5AFE CLow Saturation VoltageFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amp
2sd1397.pdf
isc Silicon NPN Power Transistor 2SD1397DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
2sd1396.pdf
isc Silicon NPN Power Transistor 2SD1396DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
