TN6727A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TN6727A
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 1 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Capacitancia de salida (Cc): 30 pF
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: TO-226

Búsqueda de reemplazo de transistor bipolar TN6727A

TN6727A Datasheet (PDF)

..1. Size:27K fairchild semi
tn6727a.pdf

TN6727AC TO-226 B E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1A. Sourced from Process 77. See TN6726A for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value Units40 VVCES Collector-Emitter Voltage50 VVCBO Collector-Base V

9.1. Size:35K fairchild semi
tn6725a.pdf

Discrete Power & Signal Technologies TN6725AC TO-226 B E NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value Units50 VVCES Collector-Emitter Voltage

9.2. Size:611K fairchild semi
tn6728a nzt6728.pdf

TN6728ANZT6728CEECBTO-226CB SOT-223EPNP General Purpose AmplifierThis device is designed for general purpose medium poweramplifiers and switches requiring collector currents to 1.0 A.Sourced from Process 78.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 60 VVCBO Collector-Base Voltage 60 V

9.3. Size:609K fairchild semi
tn6729a nzt6729.pdf

TN6729A NZT6729CECBTO-226CB SOT-223EPNP General Purpose AmplifierThis device is designed for general purpose medium poweramplifiers and switches requiring collector currents to 800mA. Sourced from Process 79.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 80 VVCBO Collector-Base Voltage 80 VV

9.4. Size:610K fairchild semi
tn6726a nzt6726.pdf

TN6726A NZT6726CECBTO-226CB SOT-223EPNP General Purpose AmplifierThis device is designed for general purpose medium poweramplifiers and switches requiring collector currents to 1.0 A.Sourced from Process 77.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 VVCBO Collector-Base Voltage 40 VVE

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: KSB798Y | KSB834 | MD918HX | RCA9228C

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050