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STA3250F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STA3250F
   Código: HW1
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 215 MHz
   Capacitancia de salida (Cc): 24 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT-89
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STA3250F Datasheet (PDF)

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 sta3250f.pdf pdf_icon

STA3250F

STA3250F PNP Silicon Transistor Applications Power amplifier application High current switching application Emitter3BaseFeatures 1 Low saturation voltage: V =-0.15V Typ @ I =-1A, I =-50mA CE(sat) C BCollector2,4 Large collector current capacity: I =-2A C Small and compact SMD type package SOT-89 Complementary pair with STC4250F Orde

 7.1. Size:374K  auk
 sta3250q.pdf pdf_icon

STA3250F

STA3250QPNP Silicon TransistorApplications PIN Connection Power amplifier application High current switching application Features Low saturation voltage: VCE(sat)=-0.15V Typ. @ IC=-1A, IB=-50mA Large collector current capacity: IC=-2A Small and compact SMD type package SOT-223 Ordering Information Type NO. Marking Package Code STA3250Q SOT-223 S

 7.2. Size:366K  auk
 sta3250d.pdf pdf_icon

STA3250F

STA3250DPNP Silicon TransistorApplications PIN Connection Power amplifier application High current switching application Features Low saturation voltage: VCE(sat)=-0.15V Typ. @ IC=-1A, IB=-50mA Large collector current capacity: IC=-2A TO-252 Small and compact SMD type package Green device and RoHS compliant device Available in full

 9.1. Size:28K  sanken-ele
 sta322a.pdf pdf_icon

STA3250F

PNPGeneral purposeSTA322A External dimensions STA (8-pin)CAbsolute maximum ratings Electrical characteristics(Ta=25C) (Ta=25C)SpecificationSymbol Ratings Unit Symbol Unit Conditionsmin typ maxVCBO 50 V ICBO 10 AVCB=50VVCEO 50 V IEBO 10 AVEB=8VVEBO 5V VCEO 50 V IC=25mAIC 3A hFE 100 350 VCE=4V, IC=1AICP 5 (PW1

MOSTRAR MÁS

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BSS56 | BDX83C | 2SB1204

 

 
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