STB205L
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STB205L
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1
W
Tensión colector-base (Vcb): 35
V
Tensión colector-emisor (Vce): 20
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 180
MHz
Capacitancia de salida (Cc): 42
pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta:
TO-92L
Búsqueda de reemplazo de transistor bipolar STB205L
STB205L
Datasheet (PDF)
..1. Size:265K auk
stb205l.pdf 
STB205LPNP Silicon TransistorPIN Connection Descriptions Suitable for low voltage large current drivers Excellent hFE Linearity. Switching Application Features High hFE : hFE=200~400 Low collector saturation voltage. : VCE(sat)=-0.5V(MAX.) TO -92L 1: Emitter 2 :Collector 3: Base Ordering Information Type NO. Marking Package Code STB ST
9.1. Size:404K st
stp200nf04 stb200nf04 stb200nf04-1.pdf
STP200NF04STB200NF04 - STB200NF04-1N-CHANNEL 40V - 120 A - 3.3 m TO-220/DPAK/IPAKSTripFETII MOSFETTable 1: General Features Figure 1: PackageType VDSS RDS(on) ID PwSTB200NF04 40 V
9.2. Size:854K st
stb200n6f3 sti200n6f3 stp200n6f3.pdf
STB200N6F3, STI200N6F3STP200N6F3N-channel 60 V, 3 m, 120 A D2PAK, TO-220, I2PAKSTripFET Power MOSFETFeaturesType VDSS RDS(on) ID PwSTB200N6F3 60 V
9.3. Size:442K st
stb20nm60-1 stb20nm60t4.pdf
STB20NM60-1 - STP20NM60FPSTB20NM60 - STP20NM60 - STW20NM60N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D2/I2PAKMDmesh Power MOSFETFeaturesType VDSS RDS(on) ID31STP20NM60 600V
9.5. Size:286K st
stb20nm60d.pdf
STB20NM60DN-channel 600V - 0.26 - 20A - D2PAKFDmesh Power MOSFETGeneral featuresType VDSS RDS(on) ID PwSTB20NM60D 600V
9.6. Size:309K st
stb20nm60a-1 stp20nm60a stf20nm60a.pdf
STB20NM60A-1STP20NM60A - STF20NM60AN-CHANNEL 650V@Tjmax - 0.25 - 20A IPAK/TO-220/TO-220FPMDmesh MOSFETTYPE VDSS @Tjmax RDS(on) IDSTB20NM60A-1 650 V
9.7. Size:354K st
stp200nf04l stb200nf04l stb200nf04l-1.pdf
STP200NF04LSTB200NF04L - STB200NF04L-1N-CHANNEL 40V - 3 m - 120 A TO-220/DPAK/IPAKSTripFET II MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) IDSTB200NF04L 40 V 3.5 m 120 ASTP200NF04L 40 V 3.8 m 120 ASTB200NF04L-1 40 V 3.8 m 120 A TYPICAL RDS(on) = 3m 33211 100% AVALANCHE TESTEDTO-220DPAK LOW THERESHOLD DRIVEDESCRIPT
9.8. Size:315K st
stb20nm50 stb20nm50-1 stp20nm50 stp20nm50fp.pdf
STB20NM50 - STB20NM50-1STP20NM50 - STP20NM50FPN-channel 500V - 0.20 - 20A - TO220/FP-D2PAK-I2PAKMDmesh Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@TJmax)332STB20NM50 550V
9.9. Size:1458K st
stb20n95k5 stf20n95k5 stp20n95k5 stw20n95k5.pdf
STB20N95K5, STF20N95K5 STP20N95K5, STW20N95K5N-channel 950 V, 0.275 , 17.5 A SuperMESH 5 Power MOSFETin DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet production dataFeaturesTABOrder codes VDSS RDS(on)max ID PW3STB20N95K5 250 W13STF20N95K5 40 W 2DPAK1950 V
9.10. Size:401K st
stb20nm50fd stf20nm50fd stp20nm50fd.pdf
STB20NM50FDSTF20NM50FD - STP20NM50FDN-channel 500 V, 0.22 , 20 A D2PAK, TO-220FP, TO-220FDmesh Power MOSFET (with fast diode)FeaturesRDS(on) Type VDSS RDS(on)* Qg IDmaxSTB20NM50FD 500 V
9.11. Size:1169K st
stb20n65m5 sti20n65m5 stp20n65m5 stw20n65m5.pdf
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packagesDatasheet production dataFeaturesTABTABVDS @ RDS(on) Order codes ID2TJmax max3321 1STB20N65M5D2PAKI2PAKSTI20N65M5710 V 0.19 18 ATABSTP20N65M5STW20N65M5 Worldwide best RDS(on) * area32
9.12. Size:401K st
stb200nf04-1 stb200nf04t4.pdf
STP200NF04STB200NF04 - STB200NF04-1N-CHANNEL 40V - 120 A - 3.3 m TO-220/DPAK/IPAKSTripFETII MOSFETTable 1: General Features Figure 1: PackageType VDSS RDS(on) ID PwSTB200NF04 40 V
9.13. Size:428K st
stb20nk50zt4.pdf
STB20NK50ZN-channel 500 V, 0.23 , 17 A SuperMESH Power MOSFETZener-protected in DPAK packageDatasheet obsolete productFeatures RDS(on) Type VDSS ID PWmaxSTB20NK50Z 500 V
9.14. Size:396K st
stb20nm50fdt4.pdf
STB20NM50FDSTF20NM50FD - STP20NM50FDN-channel 500 V, 0.22 , 20 A D2PAK, TO-220FP, TO-220FDmesh Power MOSFET (with fast diode)FeaturesRDS(on) Type VDSS RDS(on)* Qg IDmaxSTB20NM50FD 500 V
9.15. Size:407K st
stb200n4f3 stp200n4f3.pdf
STP200N4F3STB200N4F3N-channel 40 V, 0.0025 , 120 A, D2PAK, TO-220planar STripFET Power MOSFETFeaturesType VDSS RDS(on) max ID PwSTB200N4F3 40 V
9.16. Size:444K st
stb20nm60 stp20nm60fp stp20nm60 stw20nm60.pdf
STB20NM60-1 - STP20NM60FPSTB20NM60 - STP20NM60 - STW20NM60N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D2/I2PAKMDmesh Power MOSFETFeaturesType VDSS RDS(on) ID31STP20NM60 600V
9.17. Size:607K st
stb20nk50z stf20nk50z stw20nk50z stp20nk50z.pdf
STB20NK50Z, STF20NK50ZSTP20NK50Z, STW20NK50ZN-channel 500 V, 0.23 , 17 A SuperMESH Power MOSFETZener-protected TO-220, TO-247, TO-220FP, D2PAKFeatures RDS(on) Type VDSS ID PWmax3322STB20NK50Z 500 V
9.18. Size:393K st
stb20nf06l stf20nf06l stp20nf06l.pdf
STB20NF06L - STF20NF06LSTP20NF06LN-channel 60V - 0.06 - 20A - D2PAK/TO-220/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB20NF06L 60V
9.19. Size:1458K st
stb20n95k5.pdf
STB20N95K5, STF20N95K5 STP20N95K5, STW20N95K5N-channel 950 V, 0.275 , 17.5 A SuperMESH 5 Power MOSFETin DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet production dataFeaturesTABOrder codes VDSS RDS(on)max ID PW3STB20N95K5 250 W13STF20N95K5 40 W 2DPAK1950 V
9.20. Size:287K st
stb20nm50fd.pdf
STB20NM50FDN-CHANNEL 500V - 0.20 - 20A D2PAKFDmeshPower MOSFET (With FAST DIODE)PRELIMINARY DATATYPE VDSS RDS(on) IDSTB20NM50FD 500V
9.22. Size:332K st
stb200n04.pdf
STB200N04N-channel 40V - 0.0035 - 120A - D2PAKPlanar STripFET Power MOSFETGeneral featuresType VDSS RDS(on) ID PwSTB200N04 40V
9.23. Size:343K st
stb200nf04l-1 stb200nf04l.pdf
STP200NF04LSTB200NF04L - STB200NF04L-1N-CHANNEL 40V - 3 m - 120 A TO-220/DPAK/IPAKSTripFET II MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) IDSTB200NF04L 40 V 3.5 m 120 ASTP200NF04L 40 V 3.8 m 120 ASTB200NF04L-1 40 V 3.8 m 120 A TYPICAL RDS(on) = 3m 33211 100% AVALANCHE TESTEDTO-220DPAK LOW THERESHOLD DRIVEDESCRIPT
9.25. Size:356K inchange semiconductor
stb20n95k5.pdf
isc N-Channel MOSFET Transistor STB20N95K5FEATURESDrain Current : I = 17.5A@ T =25D CDrain Source Voltage: V = 950V(Min)DSSStatic Drain-Source On-Resistance: R = 330m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s
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