Биполярный транзистор STB205L - описание производителя. Основные параметры. Даташиты.
Наименование производителя: STB205L
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 35 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 180 MHz
Ёмкость коллекторного перехода (Cc): 42 pf
Статический коэффициент передачи тока (hfe): 200
Корпус транзистора: TO-92L
STB205L Datasheet (PDF)
stb205l.pdf
STB205LPNP Silicon TransistorPIN Connection Descriptions Suitable for low voltage large current drivers Excellent hFE Linearity. Switching Application Features High hFE : hFE=200~400 Low collector saturation voltage. : VCE(sat)=-0.5V(MAX.) TO -92L 1: Emitter 2 :Collector 3: Base Ordering Information Type NO. Marking Package Code STB ST
stp200nf04 stb200nf04 stb200nf04-1.pdf
STP200NF04STB200NF04 - STB200NF04-1N-CHANNEL 40V - 120 A - 3.3 m TO-220/DPAK/IPAKSTripFETII MOSFETTable 1: General Features Figure 1: PackageType VDSS RDS(on) ID PwSTB200NF04 40 V
stb200n6f3 sti200n6f3 stp200n6f3.pdf
STB200N6F3, STI200N6F3STP200N6F3N-channel 60 V, 3 m, 120 A D2PAK, TO-220, I2PAKSTripFET Power MOSFETFeaturesType VDSS RDS(on) ID PwSTB200N6F3 60 V
stb20nm60-1 stb20nm60t4.pdf
STB20NM60-1 - STP20NM60FPSTB20NM60 - STP20NM60 - STW20NM60N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D2/I2PAKMDmesh Power MOSFETFeaturesType VDSS RDS(on) ID31STP20NM60 600V
stb20nm50-1 stb20nm50 stb20nm50t4 stp20nm50fp.pdf
STB20NM50 - STB20NM50-1STP20NM50 - STP20NM50FPN-channel 500V - 0.20 - 20A - TO220/FP-D2PAK-I2PAKMDmesh Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@TJmax)332STB20NM50 550V
stb20nm60d.pdf
STB20NM60DN-channel 600V - 0.26 - 20A - D2PAKFDmesh Power MOSFETGeneral featuresType VDSS RDS(on) ID PwSTB20NM60D 600V
stb20nm60a-1 stp20nm60a stf20nm60a.pdf
STB20NM60A-1STP20NM60A - STF20NM60AN-CHANNEL 650V@Tjmax - 0.25 - 20A IPAK/TO-220/TO-220FPMDmesh MOSFETTYPE VDSS @Tjmax RDS(on) IDSTB20NM60A-1 650 V
stp200nf04l stb200nf04l stb200nf04l-1.pdf
STP200NF04LSTB200NF04L - STB200NF04L-1N-CHANNEL 40V - 3 m - 120 A TO-220/DPAK/IPAKSTripFET II MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) IDSTB200NF04L 40 V 3.5 m 120 ASTP200NF04L 40 V 3.8 m 120 ASTB200NF04L-1 40 V 3.8 m 120 A TYPICAL RDS(on) = 3m 33211 100% AVALANCHE TESTEDTO-220DPAK LOW THERESHOLD DRIVEDESCRIPT
stb20nm50 stb20nm50-1 stp20nm50 stp20nm50fp.pdf
STB20NM50 - STB20NM50-1STP20NM50 - STP20NM50FPN-channel 500V - 0.20 - 20A - TO220/FP-D2PAK-I2PAKMDmesh Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@TJmax)332STB20NM50 550V
stb20n95k5 stf20n95k5 stp20n95k5 stw20n95k5.pdf
STB20N95K5, STF20N95K5 STP20N95K5, STW20N95K5N-channel 950 V, 0.275 , 17.5 A SuperMESH 5 Power MOSFETin DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet production dataFeaturesTABOrder codes VDSS RDS(on)max ID PW3STB20N95K5 250 W13STF20N95K5 40 W 2DPAK1950 V
stb20nm50fd stf20nm50fd stp20nm50fd.pdf
STB20NM50FDSTF20NM50FD - STP20NM50FDN-channel 500 V, 0.22 , 20 A D2PAK, TO-220FP, TO-220FDmesh Power MOSFET (with fast diode)FeaturesRDS(on) Type VDSS RDS(on)* Qg IDmaxSTB20NM50FD 500 V
stb20n65m5 sti20n65m5 stp20n65m5 stw20n65m5.pdf
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packagesDatasheet production dataFeaturesTABTABVDS @ RDS(on) Order codes ID2TJmax max3321 1STB20N65M5D2PAKI2PAKSTI20N65M5710 V 0.19 18 ATABSTP20N65M5STW20N65M5 Worldwide best RDS(on) * area32
stb200nf04-1 stb200nf04t4.pdf
STP200NF04STB200NF04 - STB200NF04-1N-CHANNEL 40V - 120 A - 3.3 m TO-220/DPAK/IPAKSTripFETII MOSFETTable 1: General Features Figure 1: PackageType VDSS RDS(on) ID PwSTB200NF04 40 V
stb20nk50zt4.pdf
STB20NK50ZN-channel 500 V, 0.23 , 17 A SuperMESH Power MOSFETZener-protected in DPAK packageDatasheet obsolete productFeatures RDS(on) Type VDSS ID PWmaxSTB20NK50Z 500 V
stb20nm50fdt4.pdf
STB20NM50FDSTF20NM50FD - STP20NM50FDN-channel 500 V, 0.22 , 20 A D2PAK, TO-220FP, TO-220FDmesh Power MOSFET (with fast diode)FeaturesRDS(on) Type VDSS RDS(on)* Qg IDmaxSTB20NM50FD 500 V
stb200n4f3 stp200n4f3.pdf
STP200N4F3STB200N4F3N-channel 40 V, 0.0025 , 120 A, D2PAK, TO-220planar STripFET Power MOSFETFeaturesType VDSS RDS(on) max ID PwSTB200N4F3 40 V
stb20nm60 stp20nm60fp stp20nm60 stw20nm60.pdf
STB20NM60-1 - STP20NM60FPSTB20NM60 - STP20NM60 - STW20NM60N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D2/I2PAKMDmesh Power MOSFETFeaturesType VDSS RDS(on) ID31STP20NM60 600V
stb20nk50z stf20nk50z stw20nk50z stp20nk50z.pdf
STB20NK50Z, STF20NK50ZSTP20NK50Z, STW20NK50ZN-channel 500 V, 0.23 , 17 A SuperMESH Power MOSFETZener-protected TO-220, TO-247, TO-220FP, D2PAKFeatures RDS(on) Type VDSS ID PWmax3322STB20NK50Z 500 V
stb20nf06l stf20nf06l stp20nf06l.pdf
STB20NF06L - STF20NF06LSTP20NF06LN-channel 60V - 0.06 - 20A - D2PAK/TO-220/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB20NF06L 60V
stb20n95k5.pdf
STB20N95K5, STF20N95K5 STP20N95K5, STW20N95K5N-channel 950 V, 0.275 , 17.5 A SuperMESH 5 Power MOSFETin DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet production dataFeaturesTABOrder codes VDSS RDS(on)max ID PW3STB20N95K5 250 W13STF20N95K5 40 W 2DPAK1950 V
stb20nm50fd.pdf
STB20NM50FDN-CHANNEL 500V - 0.20 - 20A D2PAKFDmeshPower MOSFET (With FAST DIODE)PRELIMINARY DATATYPE VDSS RDS(on) IDSTB20NM50FD 500V
stb200nf03-1 stb200nf03t4 stp200nf03 stb200nf03 stb200nf03-1.pdf
STP200NF03STB200NF03 - STB200NF03-1N-channel 30V - 0.0032 - 120A - D2PAK/I2PAK/TO-220STripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP200NF03 30V
stb200n04.pdf
STB200N04N-channel 40V - 0.0035 - 120A - D2PAKPlanar STripFET Power MOSFETGeneral featuresType VDSS RDS(on) ID PwSTB200N04 40V
stb200nf04l-1 stb200nf04l.pdf
STP200NF04LSTB200NF04L - STB200NF04L-1N-CHANNEL 40V - 3 m - 120 A TO-220/DPAK/IPAKSTripFET II MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) IDSTB200NF04L 40 V 3.5 m 120 ASTP200NF04L 40 V 3.8 m 120 ASTB200NF04L-1 40 V 3.8 m 120 A TYPICAL RDS(on) = 3m 33211 100% AVALANCHE TESTEDTO-220DPAK LOW THERESHOLD DRIVEDESCRIPT
stb20nm60-1 stp20nm60fp stb20nm60 stp20nm60 stw20nm60.pdf
STB20NM60-1 - STP20NM60FPSTB20NM60 - STP20NM60 - STW20NM60N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D2/I2PAKMDmesh Power MOSFETFeaturesType VDSS RDS(on) ID31STP20NM60 600V
stb20n95k5.pdf
isc N-Channel MOSFET Transistor STB20N95K5FEATURESDrain Current : I = 17.5A@ T =25D CDrain Source Voltage: V = 950V(Min)DSSStatic Drain-Source On-Resistance: R = 330m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050