STC4350F Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STC4350F

Código: HW8

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 210 MHz

Capacitancia de salida (Cc): 18 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: SOT-89

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STC4350F datasheet

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 stc4350f.pdf pdf_icon

STC4350F

STC4350F NPN Silicon Transistor Applications Power amplifier application PIN Connection High current switching application Features Low saturation voltage VCE(sat)=0.15V Typ. @ IC=1A, IB=50mA Large collector current capacity IC=3A Small and compact SMD type package Complementary pair with STA3350F SOT-89 Green device and RoHS complia

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 stc4350q.pdf pdf_icon

STC4350F

STC4350Q NPN Silicon Transistor Applications Power amplifier application PIN Connection High current switching application C C Features B B High collector breakdown voltage C VCEO = 50V E E Low collector saturation voltage VCE(sat)= 0.35V(Max.) SOT-223 Green device and RoHS compliant device Available in full lead (Pb)-free device

 9.1. Size:2082K  stansontech
 stc4301d.pdf pdf_icon

STC4350F

STC4301D N&P Pair Enhancement Mode MOSFET 23.0A / -20.0A DESCRIPTION The STC4301D is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage applicati

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