STC4350Q Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STC4350Q
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.5 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 210 MHz
Capacitancia de salida (Cc): 18 pF
Ganancia de corriente contínua (hFE): 120
Encapsulados: SOT-223
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STC4350Q datasheet
stc4350q.pdf
STC4350Q NPN Silicon Transistor Applications Power amplifier application PIN Connection High current switching application C C Features B B High collector breakdown voltage C VCEO = 50V E E Low collector saturation voltage VCE(sat)= 0.35V(Max.) SOT-223 Green device and RoHS compliant device Available in full lead (Pb)-free device
stc4350f.pdf
STC4350F NPN Silicon Transistor Applications Power amplifier application PIN Connection High current switching application Features Low saturation voltage VCE(sat)=0.15V Typ. @ IC=1A, IB=50mA Large collector current capacity IC=3A Small and compact SMD type package Complementary pair with STA3350F SOT-89 Green device and RoHS complia
stc4301d.pdf
STC4301D N&P Pair Enhancement Mode MOSFET 23.0A / -20.0A DESCRIPTION The STC4301D is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage applicati
Otros transistores... STC405 , STC405D , STC4073D , STC4073F , STC4073Q , STC4250F , STC4250L , STC4350F , NJW0281G , STC503D , STC503F , STC601F , STC603PI , STC6075Q , STC722D , STD13003D , STD13003L .
History: 2SC5488A | BDT32BF | 2SC1509 | FMMT3641 | 2SA923-2 | STC503F | BDT32B
History: 2SC5488A | BDT32BF | 2SC1509 | FMMT3641 | 2SA923-2 | STC503F | BDT32B
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