STC4350Q . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STC4350Q
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 1.5 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 210 MHz
   Capacitancia de salida (Cc): 18 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT-223

Búsqueda de reemplazo de transistor bipolar STC4350Q

STC4350Q Datasheet (PDF)

..1. Size:319K auk
stc4350q.pdf

STC4350QNPN Silicon TransistorApplications Power amplifier application PIN Connection High current switching application CCFeatures BB High collector breakdown voltage C: VCEO = 50V EE Low collector saturation voltage : VCE(sat)= 0.35V(Max.) SOT-223 Green device and RoHS compliant device Available in full lead (Pb)-free device

7.1. Size:386K auk
stc4350f.pdf

STC4350FNPN Silicon TransistorApplications Power amplifier application PIN Connection High current switching application Features Low saturation voltage: VCE(sat)=0.15V Typ. @ IC=1A, IB=50mA Large collector current capacity: IC=3A Small and compact SMD type package Complementary pair with STA3350F SOT-89 Green device and RoHS complia

9.1. Size:2082K stansontech
stc4301d.pdf

STC4301D N&P Pair Enhancement Mode MOSFET 23.0A / -20.0A DESCRIPTION The STC4301D is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage applicati

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: PL1051

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D