All Transistors. STC4350Q Datasheet

 

STC4350Q Datasheet and Replacement


   Type Designator: STC4350Q
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.5 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 210 MHz
   Collector Capacitance (Cc): 18 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT-223
 

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STC4350Q Datasheet (PDF)

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STC4350Q

STC4350QNPN Silicon TransistorApplications Power amplifier application PIN Connection High current switching application CCFeatures BB High collector breakdown voltage C: VCEO = 50V EE Low collector saturation voltage : VCE(sat)= 0.35V(Max.) SOT-223 Green device and RoHS compliant device Available in full lead (Pb)-free device

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 stc4350f.pdf pdf_icon

STC4350Q

STC4350FNPN Silicon TransistorApplications Power amplifier application PIN Connection High current switching application Features Low saturation voltage: VCE(sat)=0.15V Typ. @ IC=1A, IB=50mA Large collector current capacity: IC=3A Small and compact SMD type package Complementary pair with STA3350F SOT-89 Green device and RoHS complia

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STC4350Q

STC4301D N&P Pair Enhancement Mode MOSFET 23.0A / -20.0A DESCRIPTION The STC4301D is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage applicati

Datasheet: STC405 , STC405D , STC4073D , STC4073F , STC4073Q , STC4250F , STC4250L , STC4350F , D965 , STC503D , STC503F , STC601F , STC603PI , STC6075Q , STC722D , STD13003D , STD13003L .

History: 2N5401U | BSV48 | DCX114TK | D5-28B

Keywords - STC4350Q transistor datasheet

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