STC4350Q Specs and Replacement
Type Designator: STC4350Q
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.5 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 210 MHz
Collector Capacitance (Cc): 18 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: SOT-223
STC4350Q Substitution
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STC4350Q datasheet
STC4350Q NPN Silicon Transistor Applications Power amplifier application PIN Connection High current switching application C C Features B B High collector breakdown voltage C VCEO = 50V E E Low collector saturation voltage VCE(sat)= 0.35V(Max.) SOT-223 Green device and RoHS compliant device Available in full lead (Pb)-free device ... See More ⇒
STC4350F NPN Silicon Transistor Applications Power amplifier application PIN Connection High current switching application Features Low saturation voltage VCE(sat)=0.15V Typ. @ IC=1A, IB=50mA Large collector current capacity IC=3A Small and compact SMD type package Complementary pair with STA3350F SOT-89 Green device and RoHS complia... See More ⇒
STC4301D N&P Pair Enhancement Mode MOSFET 23.0A / -20.0A DESCRIPTION The STC4301D is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage applicati... See More ⇒
Detailed specifications: STC405, STC405D, STC4073D, STC4073F, STC4073Q, STC4250F, STC4250L, STC4350F, NJW0281G, STC503D, STC503F, STC601F, STC603PI, STC6075Q, STC722D, STD13003D, STD13003L
Keywords - STC4350Q pdf specs
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