STD882D Todos los transistores

 ..1. Size:290K  auk
 std882d.pdf

STD882D NPN Silicon Transistor Description PIN Connection Suitable for low voltage large current drivers Excellent hFE Linearity Complementary pair with STB772D Switching Application Features Low collector saturation voltage VCE(sat)=0.4V(Max.) TO-252 Ordering Information Type NO. Marking Package Code STD882D STD882 TO-252 Absolute maximu

 8.1. Size:343K  globaltech semi
 gstd882.pdf

GSTD882 NPN Epitaxial Planar Transistors Product Description Features This device is designed as a general purpose Lead(Pb)-Free amplifier and switch. Packages & Pin Assignments TO-252 Pin Description 1 Base 2 Collector 3 Emitter Marking Information P/N Package Rank Part Marking GSTD882F TO-252 (R) / (O) / (Y) / (GR) D882 Ordering Information Part Number Package Qua

 9.1. Size:185K  st
 std888t4.pdf

STD888T4 Medium Current, High Performance, Low Voltage PNP Transistor General features Very low Collector to Emitter saturation voltage D.C. Current gain, hFE >100 5A continuous collector current Surface mounting DPAK(TO-252) power package in tape & reel packing 3 In compliance with the 2002/93/EC European 1 Directive DPAK (TO-252) Description The device in

 9.2. Size:126K  st
 std888.pdf

STD888 HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR Ordering Code Marking STD888 D888 VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE DC CURRENT GAIN, h > 100 FE 3 5 A CONTINUOUS COLLECTOR CURRENT 1 SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (Suffix "T4") DPAK APPLICATIONS TO-252 POWER MANAGEMENT IN PORTABLE (Suffix "T4") EQUIPMEN

 9.3. Size:126K  utc
 std888.pdf

UNISONIC TECHNOLOGIES CO., LTD STD888 Preliminary PNP EPITAXIAL SILICON TRANSISTOR HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC STD888 is a high current, high performance, low voltage PNP transistor; it uses UTC s advanced technology to provide customers high DC current gain and very low saturation voltage. The UTC STD888 is suitable f

 9.4. Size:217K  inchange semiconductor
 std888.pdf

isc Silicon PNP Power Transistor STD888 DESCRIPTION Low Collector-Emitter Saturation Voltage- V )= -0.7V(Max)( I = -5A; I = -0.25A) CE(sat C B DC Current Gain -h = 150(Min)@ I = -0.5A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Voltage regulation in bias supply circuits applications S