Биполярный транзистор STD882D
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: STD882D
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 15
W
Макcимально допустимое напряжение коллектор-база (Ucb): 40
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 15
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7
V
Макcимальный постоянный ток коллектора (Ic): 5
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 150
MHz
Ёмкость коллекторного перехода (Cc): 50
pf
Статический коэффициент передачи тока (hfe): 160
Корпус транзистора:
TO-252
Аналоги (замена) для STD882D
STD882D
Datasheet (PDF)
..1. Size:290K auk
std882d.pdf STD882DNPN Silicon TransistorDescription PIN Connection Suitable for low voltage large current drivers Excellent hFE Linearity Complementary pair with STB772D Switching Application Features Low collector saturation voltage VCE(sat)=0.4V(Max.) TO-252 Ordering Information Type NO. Marking Package Code STD882D STD882 TO-252 Absolute maximu
8.1. Size:343K globaltech semi
gstd882.pdf GSTD882 NPN Epitaxial Planar Transistors Product Description Features This device is designed as a general purpose Lead(Pb)-Freeamplifier and switch. Packages & Pin Assignments TO-252 Pin Description1 Base 2 Collector 3 Emitter Marking Information P/N Package Rank Part Marking GSTD882F TO-252 (R) / (O) / (Y) / (GR) D882 Ordering Information Part Number Package Qua
9.1. Size:185K st
std888t4.pdf STD888T4Medium Current, High Performance, Low VoltagePNP TransistorGeneral features Very low Collector to Emitter saturation voltage D.C. Current gain, hFE >100 5A continuous collector current Surface mounting DPAK(TO-252) power package in tape & reel packing3 In compliance with the 2002/93/EC European 1DirectiveDPAK(TO-252)DescriptionThe device in
9.2. Size:126K st
std888.pdf STD888HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOROrdering Code MarkingSTD888 D888 VERY LOW COLLECTOR TO EMITTERSATURATION VOLTAGE DC CURRENT GAIN, h > 100FE3 5 A CONTINUOUS COLLECTOR CURRENT1 SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (Suffix"T4")DPAKAPPLICATIONS TO-252 POWER MANAGEMENT IN PORTABLE(Suffix "T4")EQUIPMEN
9.3. Size:126K utc
std888.pdf UNISONIC TECHNOLOGIES CO., LTD STD888 Preliminary PNP EPITAXIAL SILICON TRANSISTOR HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC STD888 is a high current, high performance, low voltage PNP transistor; it uses UTCs advanced technology to provide customers high DC current gain and very low saturation voltage. The UTC STD888 is suitable f
9.4. Size:217K inchange semiconductor
std888.pdf isc Silicon PNP Power Transistor STD888DESCRIPTIONLow Collector-Emitter Saturation Voltage-: V )= -0.7V(Max)( I = -5A; I = -0.25A)CE(sat C BDC Current Gain -h = 150(Min)@ I = -0.5AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsVoltage regulation in bias supply circuits applicationsS
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