STD123 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STD123
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 6.5 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 260 MHz
Capacitancia de salida (Cc): 5 pF
Ganancia de corriente contínua (hfe): 150
Paquete / Cubierta: TO-92
Búsqueda de reemplazo de transistor bipolar STD123
STD123 Datasheet (PDF)
std123.pdf
STD123NPN Silicon TransistorFeatures PIN Connection Low saturation medium current application C Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability B Low on resistance : RON=0.6(Max.) (IB=1mA) E TO-92 Ordering Information Type NO. Marking Package Code
std123s.pdf
STD123S NPN Silicon Transistor Features Low saturation medium current application Extremely low collector saturation voltage COLLECTOR3 Suitable for low voltage large current drivers 3 High DC current gain and large current capability 1 Low on resistance : R =0.6(Max.) (I =1mA) ON BBASEOrdering Information 2EMITTERPart Number Marking P
std123uf.pdf
STD123UFSemiconductor Semiconductor NPN Silicon TransistorFeatures Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability Low on resistance : RON=0.6(Max.) (IB=1mA) Ordering Information Type NO. Marking Package Code S
std123as.pdf
STD123ASNPN Silicon TransistorPIN ConnectionFeatures High & low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA Suitable for large current drive directly. Application for IRED Drive transistor in remote transmitter. SOT-23 Ordering Information Type NO. Marking Package Code 12A STD123AS SOT-23 Device Code Year&Week Co
std123asf.pdf
STD123ASFNPN Silicon TransistorFeatures PIN Connection High & low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA Suitable for large current drive directly. 3 Application for IRED Drive transistor in remote transmitter. 1 2 SOT-23F Ordering Information Type NO. Marking Package Code 12A STD123ASF SOT-23F Device Code
std123u.pdf
STD123UNPN Silicon TransistorFeatures PIN Connection Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability 3 Low on resistance : RON=0.6(Max.) (IB=1mA) 1 2SOT-323 Ordering Information Type NO. Marking Package Cod
std123sf.pdf
STD123SFSemiconductor Semiconductor NPN Silicon TransistorFeatures Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability Low on resistance : RON=0.6(Max.) (IB=1mA) Ordering Information Type NO. Marking Package Code S
std123s.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors STD123S TRANSISTOR (NPN)SOT-23 FEATURES Low saturation medium current application1. BASE Extremely low collector saturation voltage2. EMITTER Suitable for low voltage large current drivers3. COLLECTOR High DC current gain and large current capability Low on resistance : RON=0.6(M
std123s.pdf
STD1 23STRANSISTOR(NPN)SOT-23 FEATURES Low saturation medium current application 1. BASE Extremely low collector saturation voltage 2. EMITTER Suitable for low voltage large current drivers 3. COLLECTOR High DC current gain and large current capability Low on resistance : RON=0.6(Max.) (IB=1mA) Marking:123 MAXIMUM RATINGS (TA=25 unless otherwise noted)
std123s.pdf
STD123S SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability Low on resistance : RON=0.6(Max.) (IB=1mA) Marking:123 Dimensions in inches and (millimeters)MA
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050