4124 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

UTC 4124 NPN TRIPLE DIFFUSED SILICON TRANSISTOR HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS DESCRIPTION UTC 4124 is designed for specially used for electronic ballasters in 110VAC environment. FEATURES * Triple diffused technology. 1* High switching speed TO-1261: BASE 2: COLLECTOR 3: EMITTER*Pb-free plating product number:4124LABSOLUTE MAXIMUM RATINGS (Tc =

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPS4124/DAmplifier TransistorNPN SiliconMPS4124COLLECTOR32BASE1EMITTER 123MAXIMUM RATINGSRating Symbol Value Unit CASE 2904, STYLE 1TO92 (TO226AA)CollectorEmitter Voltage VCE 25 VdcCollectorBase Voltage VCB 30 VdcEmitterBase Voltage VEB 5.0 VdcCollector Current Continuous IC

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N4123/DGeneral Purpose TransistorsNPN Silicon2N41232N4124COLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol 2N4123 2N4124 UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 30 25 VdcCollectorBase Voltage VCBO 40 30 VdcEmitterBase Voltage VEBO 5.0 VdcCol

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N4124NPN general purpose transistor1997 Mar 25Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN general purpose transistor 2N4124FEATURES PINNING Low current (max. 200 mA)PIN DESCRIPTION Low voltage (max. 25 V).1

Ordering number : ENA0746A 2SK4124SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4124ApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Condi

Ordering number:EN2962NPN Triple Diffused Planar Silicon Transistor2SC4124Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions Adoption of MBIT process.unit:mm On-chip damper diode.2039D High breakdown voltage (VCBO=1500V).[2SC4124] High speed (tf=100ns typ).16.05.63.4 High reliability (Adoption of HV

KST4124General Purpose Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 5 VIC Collector Current 200 mAPC Collector Power Dissipation 350 mWTSTG Storage Temp

2N4124 MMBT4124CETO-92CB BSOT-23EMark: ZCNPN General Purpose AmplifierThis device is designed as a general purpose amplifier and switch.The useful dynamic range extends to 100 mA as a switch and to100 MHz as an amplifier.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 VVCBO Collector-Base Vo

NPN Silicon Switching Transistor SMBT 4124 High current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltageType Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3SMBT 4124 sZC Q68000-A8316 B E C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE0 25 VCollector-base voltage VCB0 30Emitter-base voltage VEB0 5Collect

New ProductSi4124DYVishay SiliconixN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available TrenchFET Power MOSFET0.0075 at VGS = 10 V 20.540 21 nC 100 % Rg Tested0.009 at VGS = 4.5 V 18.7APPLICATIONS Synchronous RectificationSO-8 DC/DCDS D1 8

TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com

MMDT4124 25V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data BVCEO > 25V Case: SOT363 IC = 200mA Case Material: Molded Plastic, Green Molding Compound; UL Complementary PNP Type Available (MMDT4126) Flammability Classification Rating 94V-0 Ideal for Medium Power Amplification and Switching Moisture Sensitivity: Level 1 per J-STD-

MMST4124NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-323 Complementary PNP Type Available (MMST4126) Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 Ideal for Medium Power Ampli

SOT SI I O A A T S IT HI T A SISTO ISS A H T I D T I A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I IT DITI II V V I V I II i V V I V I i V V I V I II I V V i I V V II i V V I I i V I i V V I I i V I i I V V T i I V V T i i T I V V i V V I

MMBT4124 25V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 25V Case: SOT23 IC = 200mA High Collector Current Case Material: Molded Plastic, Green Molding Compound; Complementary PNP Type: MMBT4126 UL Flammability Classification Rating 94V-0 Ideal for Medium Power Amplification and Switching Moisture Sensitivity: Level 1 per J

MPS4124Amplifier TransistorNPN SiliconFeatures Pb-Free Packages are Available*http://onsemi.comCOLLECTORMAXIMUM RATINGS3Rating Symbol Value UnitCollector-Emitter Voltage VCE 25 Vdc2BASECollector-Base Voltage VCB 30 VdcEmitter-Base Voltage VEB 5.0 Vdc1EMITTERCollector Current - Continuous IC 200 mAdcTotal Device Dissipation @ TA = 25C PD 625 WDerate abo

2N4123, 2N4124General PurposeTransistorsNPN Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO Vdc2N4123 302N4124 251EMITTERCollector-Base Voltage VCBO Vdc2N4123 402N4124 30Emitter-Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 200 mAdcTO

MMBT4124LT1GGeneral Purpose TransistorNPN SiliconFeatureshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit 1BASECollector-Emitter Voltage VCEO 25 VdcCollector-Base Voltage VCBO 30 Vdc2Emitter-Base Voltage VEBO 5.0 VdcEMITTERCollector Current - Continuous IC 200 mAdcTHER

MMBT4124LT1GGeneral Purpose TransistorNPN SiliconFeatureswww.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit 1BASECollector-Emitter Voltage VCEO 25 VdcCollector-Base Voltage VCBO 30 Vdc2Emitter-Base Voltage VEBO 5.0 VdcEMITTERCollector Current - Continuous IC 200 mAdcTHERMAL

2N4123, 2N4124General PurposeTransistorsNPN Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO Vdc2N4123 302N4124 251EMITTERCollector-Base Voltage VCBO Vdc2N4123 402N4124 30Emitter-Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 200 mAdcTO

This product complies with the RoHS Directive (EU 2002/95/EC).DRA4124TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4124TDRA2124T in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniat

This product complies with the RoHS Directive (EU 2002/95/EC).DRA4124ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4124EDRA2124E in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free p

Transistors with built-in ResistorUN4121/4122/4123/4124/412X/412YSilicon PNP epitaxial planer transistorFor digital circuitsUnit: mm4.0 0.2FeaturesCosts can be reduced through downsizing of the equipment andreduction of the number of parts.New S type package, allowing supply with the radial taping.Resistance by Part Numbermarking(R1)(R2) 1 2 3UN4121 2.2k 2.2k

This product complies with the RoHS Directive (EU 2002/95/EC).DRC4124ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA4124EDRC2124E in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free

This product complies with the RoHS Directive (EU 2002/95/EC).DRC4124TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA4124TDRC2124T in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to mini

UNISONIC TECHNOLOGIES CO., LTD 4124D NPN EPITAXIAL SILICON TRANSISTOR MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC 4124D is a middling voltage NPN power transistor. it uses UTCs advanced technology to provide customers with high switching speed and high reliability, etc. The UTC 4124D is suitable for electronic ballasts, commonly power ampl

2N4124 0.2 A, 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 High DC Current Gain High Transition FrequencyG H Emitter Base CollectorJA DB CollectorMillimeterREF.Min. Max.KA 4.40 4.70B 4.30 4.70C 12.70 -D 3.30 3.

TGF4124-EPU 24 mm Discrete HFET 4124 0.5 um gate finger length Nominal Pout of 12 Watts at 2.3 GHz Nominal PAE of 51.5% at 2.3 GHz Nominal Gain of 10.8 dB at 2.3 GHz Die size 36.0 x 81.0 x 4.0 mils(0.914 x 2.057 x 0.102 mm)TGF4124-EPU RF Performance at F = 2.3 GHzVd = 8.0 V, Vg = -1.1 V, Iq = 2.17 A and TA = 25C50 55Pout 48 50PAE46 4544 4042 3

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBT4124GENERAL PURPOSE TRANSISTORNPN transistorMarkingCMBT4124 = 5CPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter) VCBO max. 30 VCollectoremitter voltage (open base)

FMMT4124TRANSISTOR (NPN) SOT23 FEATURES Switching Application MARKING:ZC 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 30 V CBOV Collector-Emitter Voltage 25 V CEOV Emitter-Base Voltage 5 V EBOIC Collector Current 200 mA PC Collector Power Dissipation 330 mW R T

AOD4124100V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS100VThe AOD4124 is fabricated with SDMOSTM trench 54A ID (at VGS=10V)technology that combines excellent RDS(ON) with low gate

NPN MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD4124DL Package MAIN CHARACTERISTICS I 2A CV 200V CEOP (TO-92/92-F1) 1W CP (TO-126/126S) 20W C APPLICATIONS Energy-saving light Electronic ballasts Electronic transformer

CHENMKO ENTERPRISE CO.,LTDCHT4124SGPSURFACE MOUNTGeneral Purpose TransistorVOLTAGE 25 Volts CURRENT 200 mAmpereAPPLICATION* AF input stages and driver applicationon equipment.* Other general purpose applications.FEATURESC-88/SOT-363* Small surface mounting type. (SC-88/SOT-363)* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.

CHENMKO ENTERPRISE CO.,LTDCHT4124GPSURFACE MOUNTGeneral Purpose TransistorVOLTAGE 25 Volts CURRENT 200 mAmpereAPPLICATION* AF input stages and driver applicationon equipment.* Other general purpose applications.FEATURESOT-23* Small surface mounting type. (SOT-23)* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(1)* High s

CHENMKO ENTERPRISE CO.,LTDCHT4124WGPSURFACE MOUNTGeneral Purpose TransistorVOLTAGE 25 Volts CURRENT 200 mAmpereAPPLICATION* AF input stages and driver applicationon equipment.* Other general purpose applications.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT-323)* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.

GSM4124WS 40V N-Channel Enhancement Mode MOSFET Product Description Features 40V/14A,RDS(ON)=8m@VGS=10V GSM4124WS, N-Channel enhancement mode 40V/12A,RDS(ON)=9m@VGS=4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) SOP-8P package design These devices are particul

isc N-Channel MOSFET Transistor 2SK4124FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.43(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOD4124FEATURESWith TO-252(DPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyLoad switchingGeneral purpose applicationsSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =

isc Silicon NPN Power Transistor 2SC4124DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)a