4124. Аналоги и основные параметры
Наименование производителя: 4124
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 20 W
Макcимально допустимое напряжение коллектор-база (Ucb): 400 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 200 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 4 MHz
Статический коэффициент передачи тока (hFE): 10
Корпус транзистора: TO-126
Аналоги (замена) для 4124
- подборⓘ биполярного транзистора по параметрам
4124 даташит
..1. Size:129K utc
4124.pdf 
UTC 4124 NPN TRIPLE DIFFUSED SILICON TRANSISTOR HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS DESCRIPTION UTC 4124 is designed for specially used for electronic ballasters in 110VAC environment. FEATURES * Triple diffused technology. 1 * High switching speed TO-126 1 BASE 2 COLLECTOR 3 EMITTER *Pb-free plating product number 4124L ABSOLUTE MAXIMUM RATINGS (Tc =
0.2. Size:57K motorola
mps4124rev0.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPS4124/D Amplifier Transistor NPN Silicon MPS4124 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit CASE 29 04, STYLE 1 TO 92 (TO 226AA) Collector Emitter Voltage VCE 25 Vdc Collector Base Voltage VCB 30 Vdc Emitter Base Voltage VEB 5.0 Vdc Collector Current Continuous IC
0.3. Size:162K motorola
2n4123 2n4124.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4123/D General Purpose Transistors NPN Silicon 2N4123 2N4124 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol 2N4123 2N4124 Unit TO 92 (TO 226AA) Collector Emitter Voltage VCEO 30 25 Vdc Collector Base Voltage VCBO 40 30 Vdc Emitter Base Voltage VEBO 5.0 Vdc Col
0.4. Size:48K philips
2n4124 cnv 2.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N4124 NPN general purpose transistor 1997 Mar 25 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN general purpose transistor 2N4124 FEATURES PINNING Low current (max. 200 mA) PIN DESCRIPTION Low voltage (max. 25 V). 1
0.5. Size:66K sanyo
2sk4124.pdf 
Ordering number ENA0746A 2SK4124 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4124 Applications Features Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Condi
0.6. Size:98K sanyo
2sc4124.pdf 
Ordering number EN2962 NPN Triple Diffused Planar Silicon Transistor 2SC4124 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions Adoption of MBIT process. unit mm On-chip damper diode. 2039D High breakdown voltage (VCBO=1500V). [2SC4124] High speed (tf=100ns typ). 16.0 5.6 3.4 High reliability (Adoption of HV
0.7. Size:44K fairchild semi
kst4124.pdf 
KST4124 General Purpose Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 200 mA PC Collector Power Dissipation 350 mW TSTG Storage Temp
0.8. Size:95K fairchild semi
2n4124 mmbt4124.pdf 
2N4124 MMBT4124 C E TO-92 C B B SOT-23 E Mark ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Vo
0.9. Size:97K siemens
smbt4124.pdf 
NPN Silicon Switching Transistor SMBT 4124 High current gain 0.1 mA to 100 mA Low collector-emitter saturation voltage Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 SMBT 4124 sZC Q68000-A8316 B E C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 25 V Collector-base voltage VCB0 30 Emitter-base voltage VEB0 5 Collect
0.10. Size:253K vishay
si4124dy.pdf 
New Product Si4124DY Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available TrenchFET Power MOSFET 0.0075 at VGS = 10 V 20.5 40 21 nC 100 % Rg Tested 0.009 at VGS = 4.5 V 18.7 APPLICATIONS Synchronous Rectification SO-8 DC/DC D S D 1 8
0.11. Size:80K central
2n4123 2n4124 2n4125 2n4126.pdf 
TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com
0.12. Size:261K diodes
mmdt4124.pdf 
MMDT4124 25V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data BVCEO > 25V Case SOT363 IC = 200mA Case Material Molded Plastic, Green Molding Compound; UL Complementary PNP Type Available (MMDT4126) Flammability Classification Rating 94V-0 Ideal for Medium Power Amplification and Switching Moisture Sensitivity Level 1 per J-STD-
0.13. Size:74K diodes
mmst4124.pdf 
MMST4124 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Epitaxial Planar Die Construction Case SOT-323 Complementary PNP Type Available (MMST4126) Case Material Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 Ideal for Medium Power Ampli
0.14. Size:27K diodes
fmmt4124.pdf 
SOT SI I O A A T S IT HI T A SISTO ISS A H T I D T I A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I IT DITI II V V I V I II i V V I V I i V V I V I II I V V i I V V II i V V I I i V I i V V I I i V I i I V V T i I V V T i i T I V V i V V I
0.15. Size:324K diodes
mmbt4124.pdf 
MMBT4124 25V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 25V Case SOT23 IC = 200mA High Collector Current Case Material Molded Plastic, Green Molding Compound; Complementary PNP Type MMBT4126 UL Flammability Classification Rating 94V-0 Ideal for Medium Power Amplification and Switching Moisture Sensitivity Level 1 per J
0.16. Size:48K onsemi
mps4124-d.pdf 
MPS4124 Amplifier Transistor NPN Silicon Features Pb-Free Packages are Available* http //onsemi.com COLLECTOR MAXIMUM RATINGS 3 Rating Symbol Value Unit Collector-Emitter Voltage VCE 25 Vdc 2 BASE Collector-Base Voltage VCB 30 Vdc Emitter-Base Voltage VEB 5.0 Vdc 1 EMITTER Collector Current - Continuous IC 200 mAdc Total Device Dissipation @ TA = 25 C PD 625 W Derate abo
0.17. Size:115K onsemi
2n4124g.pdf 
2N4123, 2N4124 General Purpose Transistors NPN Silicon http //onsemi.com Features Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO Vdc 2N4123 30 2N4124 25 1 EMITTER Collector-Base Voltage VCBO Vdc 2N4123 40 2N4124 30 Emitter-Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 200 mAdc TO
0.18. Size:144K onsemi
mmbt4124lt1.pdf 
MMBT4124LT1G General Purpose Transistor NPN Silicon Features http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 BASE Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc 2 Emitter-Base Voltage VEBO 5.0 Vdc EMITTER Collector Current - Continuous IC 200 mAdc THER
0.19. Size:148K onsemi
mmbt4124lt1g.pdf 
MMBT4124LT1G General Purpose Transistor NPN Silicon Features www.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 BASE Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc 2 Emitter-Base Voltage VEBO 5.0 Vdc EMITTER Collector Current - Continuous IC 200 mAdc THERMAL
0.20. Size:115K onsemi
2n4123 2n4124.pdf 
2N4123, 2N4124 General Purpose Transistors NPN Silicon http //onsemi.com Features Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO Vdc 2N4123 30 2N4124 25 1 EMITTER Collector-Base Voltage VCBO Vdc 2N4123 40 2N4124 30 Emitter-Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 200 mAdc TO
0.21. Size:221K panasonic
dra4124t.pdf 
This product complies with the RoHS Directive (EU 2002/95/EC). DRA4124T Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4124T DRA2124T in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniat
0.22. Size:348K panasonic
dra4124e.pdf 
This product complies with the RoHS Directive (EU 2002/95/EC). DRA4124E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4124E DRA2124E in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free p
0.23. Size:84K panasonic
un4121 un4122 un4123 un4124 un412x un412y.pdf 
Transistors with built-in Resistor UN4121/4122/4123/4124/412X/412Y Silicon PNP epitaxial planer transistor For digital circuits Unit mm 4.0 0.2 Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. New S type package, allowing supply with the radial taping. Resistance by Part Number marking (R1)(R2) 1 2 3 UN4121 2.2k 2.2k
0.24. Size:222K panasonic
drc4124e.pdf 
This product complies with the RoHS Directive (EU 2002/95/EC). DRC4124E Silicon NPN epitaxial planar type For digital circuits Complementary to DRA4124E DRC2124E in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free
0.25. Size:221K panasonic
drc4124t.pdf 
This product complies with the RoHS Directive (EU 2002/95/EC). DRC4124T Silicon NPN epitaxial planar type For digital circuits Complementary to DRA4124T DRC2124T in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to mini
0.26. Size:128K utc
4124d.pdf 
UNISONIC TECHNOLOGIES CO., LTD 4124D NPN EPITAXIAL SILICON TRANSISTOR MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC 4124D is a middling voltage NPN power transistor. it uses UTC s advanced technology to provide customers with high switching speed and high reliability, etc. The UTC 4124D is suitable for electronic ballasts, commonly power ampl
0.27. Size:78K secos
2n4124.pdf 
2N4124 0.2 A, 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 High DC Current Gain High Transition Frequency G H Emitter Base Collector J A D B Collector Millimeter REF. Min. Max. K A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.
0.28. Size:153K triquint
tgf4124-epu.pdf 
TGF4124-EPU 24 mm Discrete HFET 4124 0.5 um gate finger length Nominal Pout of 12 Watts at 2.3 GHz Nominal PAE of 51.5% at 2.3 GHz Nominal Gain of 10.8 dB at 2.3 GHz Die size 36.0 x 81.0 x 4.0 mils (0.914 x 2.057 x 0.102 mm) TGF4124-EPU RF Performance at F = 2.3 GHz Vd = 8.0 V, Vg = -1.1 V, Iq = 2.17 A and TA = 25 C 50 55 Pout 48 50 PAE 46 45 44 40 42 3
0.30. Size:386K htsemi
fmmt4124.pdf 
FMMT4124 TRANSISTOR (NPN) SOT 23 FEATURES Switching Application MARKING ZC 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter-Base Voltage 5 V EBO IC Collector Current 200 mA PC Collector Power Dissipation 330 mW R T
0.31. Size:263K aosemi
aod4124.pdf 
AOD4124 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AOD4124 is fabricated with SDMOSTM trench 54A ID (at VGS=10V) technology that combines excellent RDS(ON) with low gate
0.33. Size:154K chenmko
cht4124sgp.pdf 
CHENMKO ENTERPRISE CO.,LTD CHT4124SGP SURFACE MOUNT General Purpose Transistor VOLTAGE 25 Volts CURRENT 200 mAmpere APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. FEATURE SC-88/SOT-363 * Small surface mounting type. (SC-88/SOT-363) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation.
0.34. Size:155K chenmko
cht4124gp.pdf 
CHENMKO ENTERPRISE CO.,LTD CHT4124GP SURFACE MOUNT General Purpose Transistor VOLTAGE 25 Volts CURRENT 200 mAmpere APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. FEATURE SOT-23 * Small surface mounting type. (SOT-23) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. (1) * High s
0.35. Size:247K chenmko
cht4124wgp.pdf 
CHENMKO ENTERPRISE CO.,LTD CHT4124WGP SURFACE MOUNT General Purpose Transistor VOLTAGE 25 Volts CURRENT 200 mAmpere APPLICATION * AF input stages and driver applicationon equipment. * Other general purpose applications. FEATURE SC-70/SOT-323 * Small surface mounting type. (SC-70/SOT-323) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation.
0.36. Size:1293K globaltech semi
gsm4124ws.pdf 
GSM4124WS 40V N-Channel Enhancement Mode MOSFET Product Description Features 40V/14A,RDS(ON)=8m @VGS=10V GSM4124WS, N-Channel enhancement mode 40V/12A,RDS(ON)=9m @VGS=4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) SOP-8P package design These devices are particul
0.39. Size:272K inchange semiconductor
2sk4124.pdf 
isc N-Channel MOSFET Transistor 2SK4124 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.43 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
0.40. Size:208K inchange semiconductor
aod4124.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOD4124 FEATURES With TO-252(DPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Load switching General purpose applications Switching applications ABSOLUTE MAXIMUM RATINGS(T =
0.41. Size:215K inchange semiconductor
2sc4124.pdf 
isc Silicon NPN Power Transistor 2SC4124 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a
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