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4128 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 4128
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 400 V
   Tensión colector-emisor (Vce): 200 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 4 MHz
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO-126
 

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4128 Datasheet (PDF)

 ..1. Size:127K  utc
4128.pdf pdf_icon

4128

UTC 4128 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS DESCRIPTION UTC 4128 is designed for specially used for electronic ballasters in 110VAC environment. FEATURES * Triple diffused technology. 1* High switching speed TO-1261: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number: 4128LABSOLUTE MAXIMUM RATINGS (Tc = 25

 0.1. Size:251K  vishay
si4128dy.pdf pdf_icon

4128

New ProductSi4128DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.024 at VGS = 10 V 10.9 TrenchFET Power MOSFET30 3.8 nC 100 % Rg Tested0.030 at VGS = 4.5 V 9.7APPLICATIONS Notebook PC- System Power- Load SwitchSO-8 S 1 8 D

 0.2. Size:105K  utc
4128d.pdf pdf_icon

4128

UNISONIC TECHNOLOGIES CO., LTD 4128D Preliminary NPN EPITAXIAL SILICON TRANSISTOR MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 1 DESCRIPTION The UTC 4128D is a middling voltage NPN power transistor. it TO-126uses UTCs advanced technology to provide customers with high switching speed and high reliability, etc. The UTC 4128D is suitable for commonly power amplif

 0.3. Size:144K  aosemi
aod4128.pdf pdf_icon

4128

AOD4128N-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesThe AOD4128 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and low gate resistance.VDS (V) = 25VThis device is ideally suited for use as a low side switch inID = 60 A (VGS = 10V)CPU core power conversion. The device can also be usedRDS(ON)

Otros transistores... SUT497H , SUT507EF , SUT509EF , SUT510EF , SUT562EF , SUT575EF , 4124 , 4126 , A940 , 5302 , 13002AH , 13003ADA , 13003BS , 13003DE , 13003DF , 13003DH , 13003DW .

 

 
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