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4128 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 4128
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 400 V
   Tensión colector-emisor (Vce): 200 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 4 MHz
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO-126

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4128 Datasheet (PDF)

 ..1. Size:127K  utc
4128.pdf

4128
4128

UTC 4128 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS DESCRIPTION UTC 4128 is designed for specially used for electronic ballasters in 110VAC environment. FEATURES * Triple diffused technology. 1* High switching speed TO-1261: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number: 4128LABSOLUTE MAXIMUM RATINGS (Tc = 25

 0.1. Size:251K  vishay
si4128dy.pdf

4128
4128

New ProductSi4128DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.024 at VGS = 10 V 10.9 TrenchFET Power MOSFET30 3.8 nC 100 % Rg Tested0.030 at VGS = 4.5 V 9.7APPLICATIONS Notebook PC- System Power- Load SwitchSO-8 S 1 8 D

 0.2. Size:105K  utc
4128d.pdf

4128
4128

UNISONIC TECHNOLOGIES CO., LTD 4128D Preliminary NPN EPITAXIAL SILICON TRANSISTOR MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 1 DESCRIPTION The UTC 4128D is a middling voltage NPN power transistor. it TO-126uses UTCs advanced technology to provide customers with high switching speed and high reliability, etc. The UTC 4128D is suitable for commonly power amplif

 0.3. Size:144K  aosemi
aod4128.pdf

4128
4128

AOD4128N-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesThe AOD4128 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and low gate resistance.VDS (V) = 25VThis device is ideally suited for use as a low side switch inID = 60 A (VGS = 10V)CPU core power conversion. The device can also be usedRDS(ON)

 0.4. Size:574K  jilin sino
3dd4128pl.pdf

4128
4128

NPN MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD4128PL MAIN CHARACTERISTICS Package I 5A CV 200V CEOP (TO-126) 40W CP (TO-220) 75W C APPLICATIONS Energy-saving ligh Electronic ballasts Electronic transformer

 0.5. Size:265K  inchange semiconductor
aod4128.pdf

4128
4128

isc N-Channel MOSFET Transistor AOD4128FEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V =25V(Min)DSSStatic Drain-Source On-Resistance: R =4.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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