4128 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 4128
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 400 V
Tensión colector-emisor (Vce): 200 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 4 MHz
Ganancia de corriente contínua (hFE): 10
Encapsulados: TO-126
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4128 datasheet
si4128dy.pdf
New Product Si4128DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.024 at VGS = 10 V 10.9 TrenchFET Power MOSFET 30 3.8 nC 100 % Rg Tested 0.030 at VGS = 4.5 V 9.7 APPLICATIONS Notebook PC - System Power - Load Switch SO-8 S 1 8 D
4128d.pdf
UNISONIC TECHNOLOGIES CO., LTD 4128D Preliminary NPN EPITAXIAL SILICON TRANSISTOR MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 1 DESCRIPTION The UTC 4128D is a middling voltage NPN power transistor. it TO-126 uses UTC s advanced technology to provide customers with high switching speed and high reliability, etc. The UTC 4128D is suitable for commonly power amplif
aod4128.pdf
AOD4128 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4128 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. VDS (V) = 25V This device is ideally suited for use as a low side switch in ID = 60 A (VGS = 10V) CPU core power conversion. The device can also be used RDS(ON)
Otros transistores... SUT497H, SUT507EF, SUT509EF, SUT510EF, SUT562EF, SUT575EF, 4124, 4126, S8550, 5302, 13002AH, 13003ADA, 13003BS, 13003DE, 13003DF, 13003DH, 13003DW
History: RN1116FT
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