4128 Datasheet and Replacement

UTC 4128 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS DESCRIPTION UTC 4128 is designed for specially used for electronic ballasters in 110VAC environment. FEATURES * Triple diffused technology. 1* High switching speed TO-1261: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number: 4128LABSOLUTE MAXIMUM RATINGS (Tc = 25

New ProductSi4128DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.024 at VGS = 10 V 10.9 TrenchFET Power MOSFET30 3.8 nC 100 % Rg Tested0.030 at VGS = 4.5 V 9.7APPLICATIONS Notebook PC- System Power- Load SwitchSO-8 S 1 8 D

UNISONIC TECHNOLOGIES CO., LTD 4128D Preliminary NPN EPITAXIAL SILICON TRANSISTOR MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 1 DESCRIPTION The UTC 4128D is a middling voltage NPN power transistor. it TO-126uses UTCs advanced technology to provide customers with high switching speed and high reliability, etc. The UTC 4128D is suitable for commonly power amplif

AOD4128N-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesThe AOD4128 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and low gate resistance.VDS (V) = 25VThis device is ideally suited for use as a low side switch inID = 60 A (VGS = 10V)CPU core power conversion. The device can also be usedRDS(ON)

NPN MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD4128PL MAIN CHARACTERISTICS Package I 5A CV 200V CEOP (TO-126) 40W CP (TO-220) 75W C APPLICATIONS Energy-saving ligh Electronic ballasts Electronic transformer

isc N-Channel MOSFET Transistor AOD4128FEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V =25V(Min)DSSStatic Drain-Source On-Resistance: R =4.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose