4128 Specs and Replacement
Type Designator: 4128
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO-126
4128 Substitution
- BJT ⓘ Cross-Reference Search
4128 datasheet
New Product Si4128DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.024 at VGS = 10 V 10.9 TrenchFET Power MOSFET 30 3.8 nC 100 % Rg Tested 0.030 at VGS = 4.5 V 9.7 APPLICATIONS Notebook PC - System Power - Load Switch SO-8 S 1 8 D... See More ⇒
UNISONIC TECHNOLOGIES CO., LTD 4128D Preliminary NPN EPITAXIAL SILICON TRANSISTOR MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 1 DESCRIPTION The UTC 4128D is a middling voltage NPN power transistor. it TO-126 uses UTC s advanced technology to provide customers with high switching speed and high reliability, etc. The UTC 4128D is suitable for commonly power amplif... See More ⇒
AOD4128 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4128 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. VDS (V) = 25V This device is ideally suited for use as a low side switch in ID = 60 A (VGS = 10V) CPU core power conversion. The device can also be used RDS(ON) ... See More ⇒
Detailed specifications: SUT497H, SUT507EF, SUT509EF, SUT510EF, SUT562EF, SUT575EF, 4124, 4126, S8550, 5302, 13002AH, 13003ADA, 13003BS, 13003DE, 13003DF, 13003DH, 13003DW
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History: 2SC576 | 2SC58 | DTC123JMFHA | DTC123JM3T5G | DTC123JUAFRA
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