5302 Todos los transistores

 ..1. Size:135K  utc
 5302.pdf

UNISONIC TECHNOLOGIES CO., LTD 5302 NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR DESCRIPTION 1 The UTC 5302 is a NPN silicon planar transistor and suited to TO-251 be used in power amplifier applications. FEATURES * Makes efficient anti-saturation operation * Low variable storage-time spread * Low base drive * Very suitable for half bridge light ballast applica

 0.1. Size:240K  1
 irfh5302trpbf.pdf

IRFH5302PbF HEXFET Power MOSFET VDS 30 V RDS(on) max 2.1 m (@VGS = 10V) Qg (typical) 29 nC RG (typical) 1.6 ID 100 A (@Tc(Bottom) = 25 C) PQFN 5X6 mm Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Synchronous MOSFET for buck converters Battery Operated DC Motor Inverter MOSFET Features and Benefits Benefits Features ) Low RDSon (

 0.2. Size:251K  motorola
 2n5301 2n5302 2n5303.pdf

Order this document MOTOROLA by 2N5301/D SEMICONDUCTOR TECHNICAL DATA 2N5301 2N5302 High-Power NPN Silicon 2N5303 Transistors . . . for use in power amplifier and switching circuits applications. 20 AND 30 AMPERE High Collector Emitter Sustaining Voltage POWER TRANSISTORS VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303) NPN SILICON Low Collector Emitter Saturatio

 0.3. Size:240K  international rectifier
 irfh5302pbf.pdf

IRFH5302PbF HEXFET Power MOSFET VDS 30 V RDS(on) max 2.1 m (@VGS = 10V) Qg (typical) 29 nC RG (typical) 1.6 ID 100 A (@Tc(Bottom) = 25 C) PQFN 5X6 mm Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Synchronous MOSFET for buck converters Battery Operated DC Motor Inverter MOSFET Features and Benefits Benefits Features ) Low RDSon (

 0.4. Size:209K  international rectifier
 irfh5302.pdf

PD -97156 IRFH5302PbF HEXFET Power MOSFET VDS 30 V RDS(on) max 2.1 m (@VGS = 10V) Qg (typical) 29 nC RG (typical) 1.6 ID 100 A (@Tc(Bottom) = 25 C) PQFN 5X6 mm Applications OR-ing MOSFET for 12V (typical) Bus in-Rush Current Synchronous MOSFET for buck converters Battery Operated DC Motor Inverter MOSFET Features and Benefits Benefits Features

 0.5. Size:241K  international rectifier
 irfh5302dpbf.pdf

IRFH5302DPbF HEXFET Power MOSFET VDS 30 V RDS(on) max 2.5 m (@VGS = 10V) VSD max 0.65 V (@IS = 5.0A) trr (typical) 19 ns ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25 C) Applications Synchronous MOSFET for high frequency buck converters Features and Benefits Benefits Features Low RDSon (

 0.6. Size:89K  sanyo
 2sc5302.pdf

Ordering number EN5363B NPN Triple Diffused Planar Silicon Transistor 2SC5302 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions Fast speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (adoption of HVP process). [2SC5302] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0

 0.7. Size:92K  onsemi
 2n5302.pdf

2N5302 High-Power NPN Silicon Transistor High-power NPN silicon transistors are for use in power amplifier and switching circuits applications. Features http //onsemi.com Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc 30 AMPERES Pb-Free Package is Available* POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS (Note 1) (TJ = 25 C unless otherwis

 0.8. Size:92K  onsemi
 2n5302g.pdf

2N5302 High-Power NPN Silicon Transistor High-power NPN silicon transistors are for use in power amplifier and switching circuits applications. Features http //onsemi.com Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc 30 AMPERES Pb-Free Package is Available* POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS (Note 1) (TJ = 25 C unless otherwis

 0.9. Size:251K  utc
 5302d.pdf

UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications. FEATURES * Internal free-wheeling diode * Makes efficient anti-saturation operation * Low variable storage-time spread * Low bas

 0.10. Size:233K  taiwansemi
 tsc5302d.pdf

TSC5302D High Voltage NPN Transistor with Diode TO-251 TO-252 Pin Definition PRODUCT SUMMARY (IPAK) (DPAK) 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 2A VCE(SAT) 1.1V @ IC / IB = 1A / 0.25A Features Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation Operation No Need to Interest an hfe Value Because of Low Variab

 0.11. Size:133K  texas
 csd25302q2.pdf

CSD25302Q2 www.ti.com SLPS234B NOVEMBER 2009 REVISED JANUARY 2012 P-Channel NexFET Power MOSFET 1 FEATURES PRODUCT SUMMARY Ultralow Qg and Qgd VDS Drain to Source Voltage 20 V Low Thermal Resistance Qg Gate Charge Total ( 4.5V) 2.6 nC Avalanche Rated Qgd Gate Charge Gate to Drain 0.5 nC VGS = 1.8V 71 m Pb Free Terminal Plating RDS(on) Drain to So

 0.12. Size:167K  cn sptech
 2n5302.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistors 2N5302 DESCRIPTION Low Collector Saturation Voltage- V = 0.75V(Max.)@ I = 10A CE(sat) C Wide Area of Safe Operation Complement to Type 2N4399 APPLICATIONS Designed for use in power amplifier and switching circuits applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Ba

 0.13. Size:196K  inchange semiconductor
 2n5302.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistors 2N5302 DESCRIPTION Low Collector Saturation Voltage- V = 0.75V(Max.)@ I = 10A CE(sat) C Wide Area of Safe Operation Complement to Type 2N4399 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in power amplifier and switching cir

 0.14. Size:119K  inchange semiconductor
 2n5301 2n5302 2n5303.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5301 2N5302 2N5303 DESCRIPTION With TO-3 package Complement to type 2N4398/4399/5745 Low collector/saturation voltage Excellent safe operating area APPLICATIONS For use in power amplifier and switching circuits applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified o

 0.15. Size:211K  inchange semiconductor
 2sc5302.pdf

isc Silicon NPN Power Transistor 2SC5302 DESCRIPTION High Breakdown Voltage V = 1500V (Min) CBO High Speed Switching High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for inverter lighting applications. Absolute maximum ratings (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V