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13002AH . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 13002AH
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 450 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 9 V
   Corriente del colector DC máxima (Ic): 10 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 5 MHz
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO-251 TO-126 TO-92
     - Selección de transistores por parámetros

 

13002AH Datasheet (PDF)

 ..1. Size:139K  utc
13002ah.pdf pdf_icon

13002AH

UNISONIC TECHNOLOGIES CO., LTD 13002AH Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13002AH is a silicon NPN power switching transistor; it uses UTCs advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 130

 0.1. Size:365K  sisemi
mje13002aht.pdf pdf_icon

13002AH

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE / MJE SERIES TRANSISTORS MJE13002AHTNPN MJE / MJE SERIES TRANSISTORS MJE13002AHTNPN MJE

 0.2. Size:445K  sisemi
mje13002aht 1.pdf pdf_icon

13002AH

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN MJE / MJE NPN SERIES TRANSISTORS MJE13002AHTNPN MJE / MJE NPN SERIES TRANSISTORS MJE13002AHT

 8.1. Size:65K  philips
phe13002au 1.pdf pdf_icon

13002AH

Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13002AU GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended foruse in high frequency electronic lighting ballast applications, converters and inverters, etc.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Col

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SD608A | 25DB070D

 

 
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