D4120P . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: D4120P
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 350 V
Tensión colector-emisor (Vce): 200 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4 MHz
Ganancia de corriente contínua (hfe): 8
Paquete / Cubierta: TO-92
Búsqueda de reemplazo de transistor bipolar D4120P
D4120P Datasheet (PDF)
d4120p.pdf
UNISONIC TECHNOLOGIES CO., LTD D4120P Preliminary NPN SILICON TRANSISTOR MEDIUM VOLTAGE FAST-SWITCHING NPN TRANSISTOR DESCRIPTION The UTC D4120P is a medium voltage fast-switching NPN power transistor. It is characterized by medium breakdown voltage, high current capability, high switching speed and high reliability. The UTC D4120P is intended to be used in energy-saving lig
3dd4120pl.pdf
NPN MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD4120PL MAIN CHARACTERISTICS Package I 1.5A CV 200V CEOP (TO-92/TO-92-F1) 1W CP (TO-126/TO-126S) 20W C APPLICATIONS Energy-saving light Electronic ballasts Electronic transformer
aod4120.pdf
AOD4120N-Channel Enhancement Mode Field Effect Transistor1.4General Description FeaturesThe AOD4120 uses advanced trench technology and VDS (V) = 20Vdesign to provide excellent RDS(ON) with low gate ID = 25A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON)
aod4120.pdf
isc N-Channel MOSFET Transistor AOD4120FEATURESDrain Current I = 25A@ T =25D CDrain Source Voltage-: V =20V(Min)DSSStatic Drain-Source On-Resistance: R =18m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
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