MJE13003-E Todos los transistores

 

MJE13003-E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJE13003-E
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 700 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 9 V
   Corriente del colector DC máxima (Ic): 1.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 4 MHz
   Capacitancia de salida (Cc): 21 pF
   Ganancia de corriente contínua (hfe): 14
   Paquete / Cubierta: TO-126S TO-92
 

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MJE13003-E Datasheet (PDF)

 ..1. Size:274K  utc
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MJE13003-E

UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003-E designed for use in highvolatge,high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters, DC-DC converter, Motorco

 5.1. Size:358K  utc
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MJE13003-E

UNISONIC TECHNOLOGIES CO., LTD MJE13003-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR DESCRIPTION These devices are designed for high-voltage and high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode. FEATURES * Reverse biased SOA with inductive load @ Tc=100C *

 6.1. Size:107K  onsemi
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MJE13003-E

MJE13003SWITCHMODEt Series NPNSilicon Power TransistorThese devices are designed for high-voltage, high-speed powerswitching inductive circuits where fall time is critical. They areparticularly suited for 115 and 220 V SWITCHMODE applicationshttp://onsemi.comsuch as Switching Regulators, Inverters, Motor Controls,Solenoid/Relay drivers and Deflection circuits.1.5 AMPERESFeat

 6.2. Size:107K  onsemi
mje13003g.pdf pdf_icon

MJE13003-E

MJE13003SWITCHMODEt Series NPNSilicon Power TransistorThese devices are designed for high-voltage, high-speed powerswitching inductive circuits where fall time is critical. They areparticularly suited for 115 and 220 V SWITCHMODE applicationshttp://onsemi.comsuch as Switching Regulators, Inverters, Motor Controls,Solenoid/Relay drivers and Deflection circuits.1.5 AMPERESFeat

Otros transistores... D4120P , D65H2 , HJ44H11 , MJE13001 , MJE13001P , MJE13002-E , MJE13003D , MJE13003DP , S9013 , MJE13003P , MJE13005DK , MJE13005K , MJE13007D , MJE13007M , MJE13009D , MJE13009K , MJE13009P .

 

 
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