MMBT1815 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBT1815

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 80 MHz

Capacitancia de salida (Cc): 2 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: SOT-23 SOT-113 SOT-323 SOT-523 SOT-723

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MMBT1815 datasheet

 ..1. Size:230K  utc
mmbt1815.pdf pdf_icon

MMBT1815

UNISONIC TECHNOLOGIES CO., LTD MMBT1815 NPN SILICON TRANSISTOR HIGH FREQUENCY NPN AMPLIFIER TRANSISTOR FEATURES * Collector-Emitter Voltage BVCEO=50V * Collector Current up to 150mA * High hFE Linearity * Complement to MMBT1015 ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 MMBT1815G-x-AC3-R SOT-113 E B C Tape Reel MMBT1815G-x-AE3-R S

 0.1. Size:243K  mcc
mmbt1815-h-l.pdf pdf_icon

MMBT1815

MMBT1815-L MCC Micro Commercial Components TM MMBT1815-H 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 NPN EPITAXIAL Features Lead Free Finish/RoHS Compliant ("P" Suffix designates SILICON TRANSISTOR RoHS Compliant. See ordering information) Collector-Emitter voltage BVCEO=50V Collector current up t

 9.1. Size:112K  motorola
mmbt1010 msd1010t1.pdf pdf_icon

MMBT1815

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT1010LT1/D MMBT1010LT1 Low Saturation Voltage MSD1010T1 Motorola Preferred Devices PNP Silicon Driver Transistors Part of the GreenLine Portfolio of devices with energy conserving traits. This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy PNP GENERAL in general purpose driver applicatio

 9.2. Size:185K  fairchild semi
mmbt100.pdf pdf_icon

MMBT1815

PN100/PN100A/MMBT100/MMBT100A NPN General Purpose Amplifier 3 This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from process 10. 2 SOT-23 TO-92 1 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Mark N1/N1A Mark PN100/PN100A Absolute Maximum Ratings* TC=25 C unless otherwise noted Symbol Paramet

Otros transistores... USS5350, UT2274, X1049A, 2SC2328A, 2SD882S, 8050S, D882SS, HE8051, TIP41, MMBT9013, MMBT9014, MMBT945, MN2510, 2SA928A, 2SB772S, 8550S, B772SS