2SB772S
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
   Número de Parte: 2SB772S
   Material: Si
   Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
   Disipación total del dispositivo (Pc): 1
 W
   Tensión colector-base (Vcb): 40
 V
   Tensión colector-emisor (Vce): 30
 V
   Tensión emisor-base (Veb): 5
 V
   Corriente del colector DC máxima (Ic): 3
 A
   Temperatura operativa máxima (Tj): 150
 °C
CARACTERÍSTICAS ELÉCTRICAS
   Transición de frecuencia (ft): 80
 MHz
   Capacitancia de salida (Cc): 45
 pF
   Ganancia de corriente contínua (hfe): 100
		   Paquete / Cubierta: 
SOT-223
				
				  
				SOT-89
				
				  
				TO-92
				
				  
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2SB772S
 Datasheet (PDF)
 ..1.  Size:257K  utc
 2sb772s.pdf 
						 
UNISONIC TECHNOLOGIES CO., LTD 2SB772S PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR 1 1 DESCRIPTION SOT-223 SOT-89The UTC 2SB772S is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.  FEATURES * High current output up to 3A 1* Low saturation voltage * Complement to 2SD882S TO-92
 ..2.  Size:979K  blue-rocket-elect
 2sb772s.pdf 
						 
2SB772S Rev.A May.-2016 DATA SHEET  / Descriptions TO-92  PNP Silicon PNP transistor in a TO-92 Plastic Package.  / Features  VCE(sat),,h FELow saturation voltage, excellent hFE linearity and high hFE.  / Applications  3 ,,
 ..3.  Size:256K  lzg
 2sb772s 3ca772s.pdf 
						 
2SB772S(3CA772S)  PNP /SILICON PNP TRANSISTOR : 3 ,,/Purpose: Output stage of 3 watts audio amplifier, regulator, DC-DC converter and relay driver. : V ,,h /Features: Low saturation voltage, excellent h FECE(sat) FElinearity and high h . FE
 0.1.  Size:242K  pjsemi
 2sb772sq-r 2sb772sq-q 2sb772sq-p 2sb772sq-e.pdf 
						 
2SB772SQSilicon PNP Power TransistorFeatures High current output up to 3A Low saturation voltage Complement to 2SD882SQSOT-89PIN1Base PIN 2Collector PIN 3EmitterApplicationsThese devices are intended for use in audio frequency power amplifier and low speed switching applicationsAbsolute Maximum Ratings (Ta=25unless otherwise specified)Parameter Symbo
 0.2.  Size:801K  cn juxing
 2sb772sq.pdf 
						 
2SB772SQSilicon PNP Power TransistorFeatures High current output up to 3A Low saturation voltage Complement to 2SD882SQSOT-89PIN1Base PIN 2Collector PIN 3EmitterApplicationsThese devices are intended for use in audio frequencypower amplifier and low speed switching applicationsAbsolute Maximum Ratings (Ta=25unless otherwise specified)Parameter Symbol
 8.1.  Size:110K  st
 2sb772.pdf 
						 
2SB772PNP medium power transistorFeatures High current Low saturation voltage Complement to 2SD882Applications12 Voltage regulation3 Relay driver SOT-32(TO-126) Generic switch Audio power amplifier DC-DC converterFigure 1. Internal schematic diagramDescriptionThe device is a PNP transistor manufactured by using planar Technology re
 8.3.  Size:287K  mcc
 2sb772-r.pdf 
						 
2SB772-RMCC2SB772-OMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SB772-YMicro Commercial ComponentsCA 913112SB772-GRPhone: (818) 701-4933Fax:   (818) 701-4939Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulat
 8.4.  Size:287K  mcc
 2sb772-y.pdf 
						 
2SB772-RMCC2SB772-OMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SB772-YMicro Commercial ComponentsCA 913112SB772-GRPhone: (818) 701-4933Fax:   (818) 701-4939Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulat
 8.5.  Size:287K  mcc
 2sb772-gr.pdf 
						 
2SB772-RMCC2SB772-OMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SB772-YMicro Commercial ComponentsCA 913112SB772-GRPhone: (818) 701-4933Fax:   (818) 701-4939Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulat
 8.6.  Size:287K  mcc
 2sb772-o.pdf 
						 
2SB772-RMCC2SB772-OMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SB772-YMicro Commercial ComponentsCA 913112SB772-GRPhone: (818) 701-4933Fax:   (818) 701-4939Features Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates PNP SiliconRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulat
 8.7.  Size:170K  utc
 2sb772.pdf 
						 
UNISONIC TECHNOLOGIES CO., LTD 2SB772 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR   DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.   FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SD882   ORDERING INFORMATION Ordering Number
 8.8.  Size:24K  utc
 2sb772l.pdf 
						 
UTC 2SB772L PNP EPITAXIAL SILICON TRANSISTORMEDIUM POWER LOW VOLTAGETRANSISTORDESCRIPTIONThe UTC 2SB772L is a medium power low voltagetransistor, designed for audio power amplifier, DC-DCconverter and voltage regulator.FEATURES*High current output up to 3A*Low saturation voltage*Complement to 2SD882LTO-92L1:EMITTER 2:COLLECTOR 3:BASEABSOLUTE MAXIMUM RATINGS ( Ta=25C 
 8.10.  Size:220K  jmnic
 2sb772.pdf 
						 
JMnic Product Specification Silicon PNP Power Transistors 2SB772 DESCRIPTION With TO-126 package Complement to type 2SD882 APPLICATIONS Suited for the output stage of 3 watts  audio amplifier ,voltage regulator ,DC-  DC converter and relay driver PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25
 8.11.  Size:687K  wietron
 2sb772 2sd882.pdf 
						 
2SB7722SD882PNP / NPN Epitaxial Planar TransistorsTO-126P b Lead(Pb)-Free1.EMITTER2.COLLECTOR3.BASE123ABSOLUTE MAXIMUM RATINGS (Ta=25C)Rating Symbol PNP/2SB772 UnitNPN/2SD882VCEO -30 30 VdcCollector-Emitter VoltageVCBO -40 40 VdcCollector-Base VoltageVEBO -5.0 5.0 VdcEmitter-Base VoltageIC(DC) -3.0 3.0 AdcCollector Current(DC)IC(Pulse) -7.0 7.0 Adc
 8.12.  Size:943K  blue-rocket-elect
 2sb772d.pdf 
						 
2SB772D Rev.E May.-2016 DATA SHEET  / Descriptions TO-252  PNP Silicon PNP transistor in a TO-252 Plastic Package.  / Features ,h FELow saturation voltage, excellent hFE linearity and high hFE.  / Applications  3 ,,
 8.13.  Size:1586K  blue-rocket-elect
 2sb772t.pdf 
						 
2SB772T Rev.E Mar.-2016 DATA SHEET  / Descriptions SOT-89  PNP Silicon PNP transistor in a SOT-89 Plastic Package.  / Features  V ,,h CE(sat) FELow saturation voltage, excellent hFE linearity and high hFE.  / Applications  3 ,,
 8.14.  Size:668K  blue-rocket-elect
 2sb772n.pdf 
						 
2SB772N(BR3CA772N) Rev.C Feb.-2015 DATA SHEET  / Descriptions SOT-223  PNP Silicon PNP transistor in a SOT-223 Plastic Package.  / Features ,h FELow saturation voltage, excellent hFE linearity and high hFE.  / Applications  3 ,,
 8.15.  Size:1585K  blue-rocket-elect
 2sb772.pdf 
						 
2SB772 Rev.F Mar.-2016 DATA SHEET  / Descriptions TO-126F  PNP Silicon PNP transistor in a TO-126F Plastic Package.  / Features ,h FELow saturation voltage, excellent hFE linearity and high hFE.  / Applications  3 ,,
 8.16.  Size:468K  blue-rocket-elect
 2sb772l.pdf 
						 
2SB772L(BR3CA772L) Rev.C Feb.-2015 DATA SHEET  / Descriptions TO-92LM  PNP Silicon PNP transistor in a TO-92LM Plastic Package.  / Features , h  FELow saturation voltage, excellent hFE linearity and high hFE.  / Applications  3 ,,
 8.17.  Size:315K  blue-rocket-elect
 2sb772b.pdf 
						 
2SB772B(3CA772B)  PNP /SILICON PNP TRANSISTOR : 3 ,, Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h /Features: Low saturation voltage, excellent h linearity FEFEand high h . FE
 8.18.  Size:341K  blue-rocket-elect
 2sb772m.pdf 
						 
2SB772M(BR3CG772M) Rev.C Feb.-2015 DATA SHEET  / Descriptions SOT-23  PNP Silicon PNP transistor in a SOT-23 Plastic Package.  / Features , hFE  Low saturation voltage, excellent hFE linearity and high hFE.  / Applications ,,
 8.19.  Size:709K  semtech
 st2sb772r.pdf 
						 
ST 2SB772R PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power  amplifier and low speed switching applications OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 6 V -IC Collector Current 3 A OTotal Power Dissipati
 8.20.  Size:178K  semtech
 2sb772u-r 2sb772u-q 2sb772u-p 2sb772u-e.pdf 
						 
2SB772U PNP Silicon Epitaxial Power Transistor These devices are intended for use in audio frequency power amplifier and low speed switching applications Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 V -IC Collector Current 3 A-ICPPeak Collector Current 
 8.21.  Size:668K  semtech
 st2sb772t.pdf 
						 
ST 2SB772T PNP Silicon Epitaxial Power Transistor These devices are intended for use in audio frequency power amplifier and low speed switching applications ECBTO-126 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V Collector Current
 8.22.  Size:431K  semtech
 st2sb772u.pdf 
						 
ST 2SB772U PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 V -IC Collector Current 3 A-ICPPeak Collector Curre
 8.23.  Size:131K  lrc
 l2sb772q.pdf 
						 
LESHAN RADIO COMPANY, LTD.PNPSURFACEMOUNTTRANSISTORL2SB772Q L2SB772PWe declare that the material of product compliance with RoHS requirements.4 123DEVICE MARKING AND ORDERING INFORMATIONSOT-89Device Marking ShippingL2SB772Q 72Q 2500/Tape&Reel2,4L2SB772P 72P 2500/Tape&ReelCOLLECTOR1MAXIMUM RATINGS(Ta=25C)BASEParameter Symbol Limits Unit3Collector-bas
 8.24.  Size:891K  kexin
 2sb772-126.pdf 
						 
DIP Type TransistorsPNP Transistors2SB772TO-126Unit:mm8.00 0.30 3.25 0.20 Features PNP transistor High current output up to 3A Low Saturation Voltage3.20 0.10 Complement to 2SD882(1.00) (0.50)0.75 0.101.75 0.201.60 0.100.75 0.101 2 3#1+0.102.28TYP 2.28TYP 0.50 0.05[2.280.20] [2.280.20]1. Base2. Collector3. Emitte
 8.25.  Size:344K  kexin
 2sb772a.pdf 
						 
SMD Type TransistorsPNP Transistors2SB772A Features1.70 0.1 PNP transistor High current output up to 3A Low Saturation Voltage Complement to 2SD882A0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to Base Voltage VCBO -70 VCollector to Emitter Voltage VCEO -60 VEmitter to Base V
 8.26.  Size:369K  kexin
 2sb772.pdf 
						 
SMD Type TransistorsTPNP Transistor2SB772TO-252Unit: mm Features+0.15 +0.16.50-0.15 2.30-0.1 PNP transistor High current output up to 3A+0.2 +0.85.30-0.2 0.50-0.7 Low Saturation Voltage4 Complement to 2SD8820.127+0.1 max0.80-0.1231+0.12.3 0.60-0.11. BASE+0.154.60-0.152. COLLECTOR3. EMITTER4. COLLECTOR Absolute Maximum Rati
 8.27.  Size:110K  chenmko
 2sb772gp.pdf 
						 
CHENMKO ENTERPRISE CO.,LTD2SB772GPSMALL FLAT PNP Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 AmpereAPPLICATION* Power driver and Dc to DC convertor .FEATURE* Small flat package. (SC-62/SOT-89)SC-62/SOT-89* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A) * High speed switching time: tstg= 1.0uSec (typ.)* PC= 1.5 W (mounted on ceramic substrate).4.6MAX. 1.6MAX.
 8.28.  Size:124K  chenmko
 2sb772zgp.pdf 
						 
CHENMKO ENTERPRISE CO.,LTD2SB772ZGPSMALL FLAT PNP Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 AmpereAPPLICATION* Power driver and Dc to DC convertor .FEATURE* Small flat package. (SC-73/SOT-223)SC-73/SOT-223* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A) * High speed switching time: tstg= 1.0uSec (typ.)1.65+0.15* PC= 1.5 W (mounted on ceramic substrate).6.5
 8.29.  Size:348K  lzg
 2sb772t 3ca772t.pdf 
						 
2SB772T(3CA772T)  PNP /SILICON PNP TRANSISTOR : 3 ,,/Purpose: Output stage of 3 watts audio amplifier, regulator, DC-DC converter and relay driver. : V ,,h /Features: Low saturation voltage, excellent h FECE(sat) FElinearity and high h . FE
 8.30.  Size:288K  lzg
 2sb772i 3ca772i.pdf 
						 
2SB772I(3CA772I)  PNP /SILICON PNP TRANSISTOR : 3 ,, Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h . FEFeatures: Low saturation voltage, excellent h linearity and high h . FE FE
 8.31.  Size:280K  lzg
 2sb772l 3ca772l.pdf 
						 
2SB772L(3CA772L)  PNP /SILICON PNP TRANSISTOR : 3 ,, Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h /Features: Low saturation voltage, excellent h linearity FEFEand high h . FE
 8.32.  Size:413K  lzg
 2sb772d 3ca772d.pdf 
						 
2SB772D(3CA772D)  PNP /SILICON PNP TRANSISTOR : 3 ,, Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h ./Features: Low saturation voltage, excellent h linearity FEFEand high h . FE
 8.33.  Size:220K  lzg
 2sb772m 3ca772m.pdf 
						 
2SB772M(3CG772M)  PNP /SILICON PNP TRANSISTOR :,, Purpose: Output stage of audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h /Features: Low saturation voltage, excellent h linearity FEFEand high h . FE/Absolut
 8.34.  Size:327K  lzg
 2sb772b 3ca772b.pdf 
						 
2SB772B(3CA772B)  PNP /SILICON PNP TRANSISTOR : 3 ,, Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h /Features: Low saturation voltage, excellent h linearity FEFEand high h . FE
 8.35.  Size:288K  lzg
 2sb772i.pdf 
						 
2SB772I(3CA772I)  PNP /SILICON PNP TRANSISTOR : 3 ,, Purpose: Output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h . FEFeatures: Low saturation voltage, excellent h linearity and high h . FE FE
 8.36.  Size:5206K  msksemi
 2sb772-ms.pdf 
						 
www.msksemi.com2SB772-MSSemiconductor CompianceSemiconductor Compiance1. BASE TRANSISTOR (PNP) 2. COLLETOR FEATURES  Low speed switching 3. EMITTER  MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A 
 8.37.  Size:4731K  msksemi
 2sb772.pdf 
						 
www.msksemi.com2SB772Semiconductor CompianceSemiconductor CompianceTRANSISTOR (PNP) FEATURES Low Speed Switching213TO-252-2L MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V 1. BASEVEBO Emitter-Base Voltage -6 V 2. COLLECTOR IC Collector Current -Continuous -3 
 8.38.  Size:490K  cn evvo
 2sb772-r 2sb772-q 2sb772-p 2sb772-e.pdf 
						 
B772PNP Transistors Features3 PNP transistor High current output up to 3A2 Low Saturation Voltage1.Base1 Complement to 2SD8822.Collector3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to Base Voltage VCBO -40 VCollector to Emitter Voltage VCEO -30 VEmitter to Base Voltage VEBO -6 V
 8.39.  Size:414K  cn cbi
 2sb772u.pdf 
						 
2SB772U PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications MARKING:B772 OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 V -IC Collector Current 3 A-ICPPeak C
 8.40.  Size:213K  inchange semiconductor
 2sb772.pdf 
						 
isc Silicon PNP Power Transistor 2SB772DESCRIPTIONHigh Collector Current -I = -3ACHigh Collector-Emitter Breakdown Voltage-: V = -30V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SD882Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in the output stage of 3 watts a
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History: 2SC3357-E
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