MMBT9012
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBT9012
Código: 12
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225
W
Tensión colector-base (Vcb): 40
V
Tensión colector-emisor (Vce): 20
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 64
Paquete / Cubierta:
SOT-23
Búsqueda de reemplazo de transistor bipolar MMBT9012
MMBT9012
Datasheet (PDF)
..1. Size:98K utc
mmbt9012.pdf 
UTC MMBT9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES 2*High total power dissipation. (625mW) 1*High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC MMBT9013 3MARKING 12SOT-231: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25C, unless otherwise specifie
0.1. Size:175K utc
mmbt9012g-d mmbt9012g-e mmbt9012g-f mmbt9012g-g mmbt9012g-h mmbt9012g-i.pdf
UNISONIC TECHNOLOGIES CO., LTD MMBT9012 PNP SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION 3 FEATURES 12*High total power dissipation. (625mW) SOT-23*High collector current. (-500mA) (JEDEC TO-236)*Excellent hFE linearity *Complementary to UTC MMBT9013 ORDERING INFORMATION Pin Assignment Ordering Number Package P
0.2. Size:173K semtech
mmbt9012g mmbt9012h.pdf
MMBT9012 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 500 mA Power Dissipation Ptot 200 mWOJunction Temperature Tj 150 C O
0.3. Size:120K semtech
mmbt9012h-h35.pdf
MMBT9012H-H35 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 500 mA Power Dissipation Ptot 200 mWJunction Temperature Tj 150
0.4. Size:120K semtech
mmbt9012h-h23.pdf
MMBT9012H-H23 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 500 mA Power Dissipation Ptot 200 mWOJunction Temperature Tj 150 C
0.5. Size:135K wej
mmbt9012lt1.pdf
RoHS MMBT9012LT1PNP EPITAXIAL SILICON TRANSISTOR SOT-2331W OUTPUT AMPLIFIER OF PORTABLE1RADIOS IN CLASSB PUSH-PULL OPERATION21.1.BASE Complement to 9013G2.EMITTER Collector Current :Ic=-500mA2.43.COLLECTOR1.3 High Total Power Dissipation Pc=225mW Unit:mmoABSOLUTE MAXIMUM RATINGS (Ta=25 C)Symbol Rating UnitCharacteristicCollector-Base Voltage VCBO
0.6. Size:1743K pjsemi
mmbt9012g mmbt9012h.pdf
MMBT9012 PNP Transistor Features SOT-23 For Switching and AF Amplifer Applications.Equivalent Circuit 1.Base 2.Emitter 3.Collector3.CollectorMarking Code : MMBT9012G : K2 1.BaseMMBT9012H : K32. Emitter.Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified.Parameter Symbol Value UnitCollector Base Voltage -V 40 VCBOCollec
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