MMBT9012 Datasheet. Specs and Replacement

Type Designator: MMBT9012  📄📄 

SMD Transistor Code: 12

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 64

Noise Figure, dB: -

Package: SOT-23

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MMBT9012 datasheet

 ..1. Size:98K  utc

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MMBT9012

UTC MMBT9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES 2 *High total power dissipation. (625mW) 1 *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC MMBT9013 3 MARKING 12 SOT-23 1 EMITTER 2 BASE 3 COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C, unless otherwise specifie... See More ⇒

 0.1. Size:175K  utc

mmbt9012g-d mmbt9012g-e mmbt9012g-f mmbt9012g-g mmbt9012g-h mmbt9012g-i.pdf pdf_icon

MMBT9012

UNISONIC TECHNOLOGIES CO., LTD MMBT9012 PNP SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION 3 FEATURES 1 2 *High total power dissipation. (625mW) SOT-23 *High collector current. (-500mA) (JEDEC TO-236) *Excellent hFE linearity *Complementary to UTC MMBT9013 ORDERING INFORMATION Pin Assignment Ordering Number Package P... See More ⇒

 0.2. Size:173K  semtech

mmbt9012g mmbt9012h.pdf pdf_icon

MMBT9012

MMBT9012 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 500 mA Power Dissipation Ptot 200 mW O Junction Temperature Tj 150 C O... See More ⇒

 0.3. Size:120K  semtech

mmbt9012h-h35.pdf pdf_icon

MMBT9012

MMBT9012H-H35 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 500 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 150 ... See More ⇒

Detailed specifications: MMBT945, MN2510, 2SA928A, 2SB772S, 8550S, B772SS, HE8551, MMBT1015, BC557, MMBT9015, MP2510, MPSA92M, DTA113T, DTA114E, DTA114T, DTA114W, DTA114Y

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