MN2510 Datasheet and Replacement
Type Designator: MN2510
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO-3P
MN2510 Substitution
MN2510 Datasheet (PDF)
mn2510.pdf

UNISONIC TECHNOLOGIES CO., LTD MN2510 Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN TRANSISTOR DESCRIPTION The UTC MN2510 is an NPN transistor, it uses UTCs advanced technology to provide the customers with high DC current gain and high collector-emitter breakdown voltage, etc. The UTC MN2510 is suitable for automobile power amplifiers, etc. FEATURES * High DC
Datasheet: 2SD882S , 8050S , D882SS , HE8051 , MMBT1815 , MMBT9013 , MMBT9014 , MMBT945 , BC337 , 2SA928A , 2SB772S , 8550S , B772SS , HE8551 , MMBT1015 , MMBT9012 , MMBT9015 .
History: TA1650A | ECG345 | TA1881 | MMBT6520LT1G | 2SD1725 | CHT4403GP | TA1766
Keywords - MN2510 transistor datasheet
MN2510 cross reference
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History: TA1650A | ECG345 | TA1881 | MMBT6520LT1G | 2SD1725 | CHT4403GP | TA1766



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