MN2510 Datasheet. Specs and Replacement
Type Designator: MN2510 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO-3P
MN2510 Substitution
- BJT ⓘ Cross-Reference Search
MN2510 datasheet
UNISONIC TECHNOLOGIES CO., LTD MN2510 Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN TRANSISTOR DESCRIPTION The UTC MN2510 is an NPN transistor, it uses UTC s advanced technology to provide the customers with high DC current gain and high collector-emitter breakdown voltage, etc. The UTC MN2510 is suitable for automobile power amplifiers, etc. FEATURES * High DC ... See More ⇒
Detailed specifications: 2SD882S, 8050S, D882SS, HE8051, MMBT1815, MMBT9013, MMBT9014, MMBT945, 2SA1943, 2SA928A, 2SB772S, 8550S, B772SS, HE8551, MMBT1015, MMBT9012, MMBT9015
Keywords - MN2510 pdf specs
MN2510 cross reference
MN2510 equivalent finder
MN2510 pdf lookup
MN2510 substitution
MN2510 replacement
