All Transistors. HE8551 Datasheet

 

HE8551 Datasheet, Equivalent, Cross Reference Search


   Type Designator: HE8551
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.9 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 9 pF
   Forward Current Transfer Ratio (hFE), MIN: 85
   Noise Figure, dB: -
   Package: TO-92NL TO-92

 HE8551 Transistor Equivalent Substitute - Cross-Reference Search

   

HE8551 Datasheet (PDF)

 ..1. Size:182K  utc
he8551.pdf

HE8551
HE8551

UNISONIC TECHNOLOGIES CO., LTD HE8551 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 1TO-92 DESCRIPTION The UTC HE8551 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. 1 FEATURES TO-92NL* Collector current up to 1.5A * Coll

 9.1. Size:213K  utc
he8550.pdf

HE8551
HE8551

UNISONIC TECHNOLOGIES CO., LTD HE8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications. FEATURES * Collector Current up to 1.5A * Collector-Emitter Volt

 9.2. Size:21K  utc
he8550l.pdf

HE8551
HE8551

UTC HE8550 PNP EPITAXIAL SILIC ON TRANSISTORLOW VOLTAGE HIGH CURRENTSMALL SIGNAL PNP TRANSISTORDESCRIPTION The UTC HE8550 is a low voltage high current smallsignal PNP transistor, designed for Class B push-pull2W audio amplifier for portable radio and general purposeapplications.1FEATURES*Collector current up to 1.5A*Collector-Emitter voltage up to 25 V*Complimentary to

 9.3. Size:46K  hsmc
he8550.pdf

HE8551
HE8551

Spec. No. : HE6114HI-SINCERITYIssued Date : 1992.09.30Revised Date : 2006.07.28MICROELECTRONICS CORP.Page No. : 1/4HE8550PNP Epitaxial Planar TransistorDescriptionThe HE8550 is designed for use in 2W output amplifier of portable radios in class B push-pulloperation. TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature................................

 9.4. Size:55K  hsmc
he8550s.pdf

HE8551
HE8551

Spec. No. : HE6129HI-SINCERITYIssued Date : 1993.01.15Revised Date : 2004.07.26MICROELECTRONICS CORP.Page No. : 1/5HE8550SPNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HE8550S is designed for general purpose amplifier applications.FeaturesTO-92 High DC Current gain: 100-500 at IC=150mA Complementary to HE8050SAbsolute Maximum Ratings Maximum Temperatures

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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