DTA123E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTA123E
Código: AC3E
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 2.2 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625 W
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO-92 SOT-23 SOT-323 SOT-523
Búsqueda de reemplazo de transistor bipolar DTA123E
DTA123E Datasheet (PDF)
dta123e.pdf
UNISONIC TECHNOLOGIES CO., LTD DTA123E PNP SILICON TRANSISTOR DIGITAL TRANSISTORS 3(BUILT- IN BIAS RESISTORS) 12SOT-23 FEATURES 3 3* Built-in bias resistors that implies easy ON/OFF applications. 1 1* The bias resistors are thin-film resistors with complete isolation to 22SOT-523allow positive input. SOT-323 EQUIVALENT CIRCUIT 1TO-92 ORDERING INFORMATION
pdta123et 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA123ETPNP resistor-equipped transistorProduct specification 1999 May 21Supersedes data of 1998 May 18Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA123ETFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k each) Simplification of circuit design3ndbook, 4 columns
pdta123e series.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPDTA123E seriesPNP resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 kProduct data sheet 2004 Aug 02Supersedes data of 2004 Apr 07NXP Semiconductors Product data sheetPNP resistor-equipped transistors; PDTA123E seriesR1 = 2.2 k, R2 = 2.2 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI
pdta123et 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA123ETPNP resistor-equipped transistorProduct specification 1999 May 21Supersedes data of 1998 May 18Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA123ETFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k each) Simplification of circuit design3ndbook, 4 columns
pdta123ee pdta123eef pdta123ek pdta123em pdta123es pdta123et pdta123eu.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pdta123eef pdta123ek pdta123es.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPDTA123E seriesPNP resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 kProduct data sheet 2004 Aug 02Supersedes data of 2004 Apr 07NXP Semiconductors Product data sheetPNP resistor-equipped transistors; PDTA123E seriesR1 = 2.2 k, R2 = 2.2 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI
dta123eefra dta123ekafra dta123emfha dta123euafra.pdf
DTA123E seriesDatasheetPNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlinelParameter ValueVMT3 EMT3VCC-50VIC(MAX.)-100mA R12.2kDTA123EM DTA123EEDTA123EMFHA DTA123EEFRAR2 (SC-105AA) SOT-416(SC-75A)2.2kUMT3 SMT3lFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 2.2k 2
dta123ee.pdf
DTA123E seriesDatasheetPNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)Outline VMT3 EMT3Parameter ValueOUTOUTVCC50VININIC(MAX.) GND100mA GNDR12.2kDTA123EM DTA123EER22.2k (SC-105AA) SOT-416 (SC-75A) UMT3 SMT3OUTOUTFeaturesIN1) Built-In Biasing Resistors, R1 = R2 = 2.2k.INGNDGND2) Built-in bias re
dta123e-series.pdf
-100mA / -50V Digital transistors (with built-in resistors) DTA123EM / DTA123EE / DTA123EUA / DTA123EKA Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. (see equivalent circuit) 2) The bias resistors consist of thin-film resistors with complete isolation to
dta123ee-eua-eka 12sot416 323 346 dta123eka dta123esa.pdf
TransistorsDigital transistors (built-in resistors)DTA123EE / DTA123EUA / DTA123EKA /DTA123ESAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow positive bi
ddta123ee.pdf
DDTA (R1 = R2 SERIES) EDDTA (R1 = R2 SERIES) E PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-523 Complementary NPN Types Available (DDTC) Dim Min Max Typ Built-In Biasing Resistors, R1 = R2 A 0.15 0.30 0.22 Lead Free/RoHS Compliant (Note 2) TOP VIEW B C B 0.75 0.85 0.80 "Green" Device (Note 3 and 4)
ddta123eua.pdf
DDTA (R1 = R2 SERIES) UA PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-323 Complementary NPN Types Available (DDTC) Dim Min Max Built-In Biasing Resistors, R1 = R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B CB 1.15 1.35 "Green" Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 N
ddta123eka.pdf
DDTA (R1 = R2 SERIES) KA PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SC-59 A Complementary NPN Types Available (DDTC) Dim Min Max Built-In Biasing Resistors, R1 = R2 A 0.35 0.50 Lead Free/RoHS Compliant (Note 2) B 1.50 1.70 "Green" Device, Note 3 and 4 B CC 2.70 3.00 Mechanical Data D 0.95
ddta123eca.pdf
DDTA (R1 = R2 SERIES) CAPNP PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTORFeatures Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Complementary NPN Types Available (DDTC) Case material: Molded Plastic. Green Molding Compound. Built-In Biasing Resistors, R1 = R2 Classification Rating 94V-0 Lead Free, RoHS Compliant (Note
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DDTA (R1 = R2 SERIES) CA PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Complementary NPN Types Available (DDTC) Case Material: Molded Plastic, Green Molding Compound Built-In Biasing Resistors, R1 R2 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully R
dta123em3.pdf
MUN2131, MMUN2131L,MUN5131, DTA123EE,DTA123EM3, NSBA123EF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 2.2 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (B
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DTA114EM3T5G SeriesPreferred DevicesDigital Transistors (BRT)PNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The digital transistorhttp://onsemi.comcontains a single transistor with a monolithic bias network consistingof two resistors;
nsvdta123em3t5g.pdf
MUN2131, MMUN2131L,MUN5131, DTA123EE,DTA123EM3, NSBA123EF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 2.2 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (B
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DTA114EET1 Series,SDTA114EET1 SeriesPreferred DevicesBias Resistor TransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic bias PNP SIL
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LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsLDTA114EET1G SeriesPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two resistors
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LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsPNP Silicon Surface Mount TransistorsLDTA114EM3T5GWith Monolithic Bias Resistor NetworkSeriesThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias Resistor3Transistor) contains a single transistor with a monolithic bias networkconsisting of two resi
chdta123eegp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTA123EEGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cu
chdta123ekgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTA123EKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil
chdta123eugp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTA123EUGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-70/SOT323) SC-70/SOT-323* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cu
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N1463 | 2N1481
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