DTA123E Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTA123E 📄📄
Código: AC3E
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 2.2 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625 W
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 250 MHz
Ganancia de corriente contínua (hFE): 20
Encapsulados: TO-92
SOT-23
SOT-323
SOT-523
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DTA123E datasheet
..1. Size:193K utc
dta123e.pdf 
UNISONIC TECHNOLOGIES CO., LTD DTA123E PNP SILICON TRANSISTOR DIGITAL TRANSISTORS 3 (BUILT- IN BIAS RESISTORS) 1 2 SOT-23 FEATURES 3 3 * Built-in bias resistors that implies easy ON/OFF applications. 1 1 * The bias resistors are thin-film resistors with complete isolation to 2 2 SOT-523 allow positive input. SOT-323 EQUIVALENT CIRCUIT 1 TO-92 ORDERING INFORMATION
0.1. Size:56K motorola
pdta123et 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA123ET PNP resistor-equipped transistor Product specification 1999 May 21 Supersedes data of 1998 May 18 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123ET FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k each) Simplification of circuit design 3 ndbook, 4 columns
0.2. Size:183K philips
pdta123e series.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PDTA123E series PNP resistor-equipped transistors; R1 = 2.2 k , R2 = 2.2 k Product data sheet 2004 Aug 02 Supersedes data of 2004 Apr 07 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; PDTA123E series R1 = 2.2 k , R2 = 2.2 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNI
0.3. Size:56K philips
pdta123et 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA123ET PNP resistor-equipped transistor Product specification 1999 May 21 Supersedes data of 1998 May 18 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123ET FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k each) Simplification of circuit design 3 ndbook, 4 columns
0.4. Size:416K nxp
pdta123ee pdta123eef pdta123ek pdta123em pdta123es pdta123et pdta123eu.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
0.5. Size:139K nxp
pdta123eef pdta123ek pdta123es.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PDTA123E series PNP resistor-equipped transistors; R1 = 2.2 k , R2 = 2.2 k Product data sheet 2004 Aug 02 Supersedes data of 2004 Apr 07 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; PDTA123E series R1 = 2.2 k , R2 = 2.2 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNI
0.6. Size:2081K rohm
dta123eefra dta123ekafra dta123emfha dta123euafra.pdf
DTA123E series Datasheet PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline l Parameter Value VMT3 EMT3 VCC -50V IC(MAX.) -100mA R1 2.2k DTA123EM DTA123EE DTA123EMFHA DTA123EEFRA R2 (SC-105AA) SOT-416(SC-75A) 2.2k UMT3 SMT3 lFeatures l 1) Built-In Biasing Resistors, R1 = R2 = 2.2k 2
0.7. Size:338K rohm
dta123ee.pdf
DTA123E series Datasheet PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) Outline VMT3 EMT3 Parameter Value OUT OUT VCC 50V IN IN IC(MAX.) GND 100mA GND R1 2.2k DTA123EM DTA123EE R2 2.2k (SC-105AA) SOT-416 (SC-75A) UMT3 SMT3 OUT OUT Features IN 1) Built-In Biasing Resistors, R1 = R2 = 2.2k . IN GND GND 2) Built-in bias re
0.8. Size:158K rohm
dta123e-series.pdf
-100mA / -50V Digital transistors (with built-in resistors) DTA123EM / DTA123EE / DTA123EUA / DTA123EKA Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. (see equivalent circuit) 2) The bias resistors consist of thin-film resistors with complete isolation to
0.9. Size:68K rohm
dta123ee-eua-eka 12sot416 323 346 dta123eka dta123esa.pdf
Transistors Digital transistors (built-in resistors) DTA123EE / DTA123EUA / DTA123EKA / DTA123ESA FFeatures FExternal dimensions (Units mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow positive bi
0.10. Size:227K diodes
ddta123ee.pdf
DDTA (R1 = R2 SERIES) E DDTA (R1 = R2 SERIES) E PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-523 Complementary NPN Types Available (DDTC) Dim Min Max Typ Built-In Biasing Resistors, R1 = R2 A 0.15 0.30 0.22 Lead Free/RoHS Compliant (Note 2) TOP VIEW B C B 0.75 0.85 0.80 "Green" Device (Note 3 and 4)
0.11. Size:175K diodes
ddta123eua.pdf
DDTA (R1 = R2 SERIES) UA PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-323 Complementary NPN Types Available (DDTC) Dim Min Max Built-In Biasing Resistors, R1 = R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B C B 1.15 1.35 "Green" Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 N
0.13. Size:104K diodes
ddta123eca.pdf
DDTA (R1 = R2 SERIES) CA PNP PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case SOT23 Complementary NPN Types Available (DDTC) Case material Molded Plastic. Green Molding Compound. Built-In Biasing Resistors, R1 = R2 Classification Rating 94V-0 Lead Free , RoHS Compliant (Note
0.14. Size:406K diodes
ddta123eca ddta143eca ddta114eca ddta124eca ddta144eca ddta115eca.pdf
DDTA (R1 = R2 SERIES) CA PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case SOT23 Complementary NPN Types Available (DDTC) Case Material Molded Plastic, Green Molding Compound Built-In Biasing Resistors, R1 R2 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully R
0.15. Size:109K onsemi
dta123em3.pdf
MUN2131, MMUN2131L, MUN5131, DTA123EE, DTA123EM3, NSBA123EF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 2.2 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (B
0.17. Size:109K onsemi
nsvdta123em3t5g.pdf
MUN2131, MMUN2131L, MUN5131, DTA123EE, DTA123EM3, NSBA123EF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 2.2 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (B
0.18. Size:222K onsemi
dta114eet1g dta114tet1g dta114yet1g dta115eet1g dta123eet1g dta123jet1g dta124eet1g dta124xet1g.pdf
DTA114EET1 Series, SDTA114EET1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http //onsemi.com This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias PNP SIL
0.21. Size:133K chenmko
chdta123eegp.pdf
CHENMKO ENTERPRISE CO.,LTD CHDTA123EEGP SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-75/SOT416) SC-75/SOT-416 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation cu
0.22. Size:119K chenmko
chdta123ekgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHDTA123EKGP SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabil
0.23. Size:140K chenmko
chdta123eugp.pdf
CHENMKO ENTERPRISE CO.,LTD CHDTA123EUGP SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-70/SOT323) SC-70/SOT-323 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation cu
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