Биполярный транзистор DTA123E
Даташит. Аналоги
Наименование производителя: DTA123E
Маркировка: AC3E
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 2.2 kOhm
Встроенный резистор цепи смещения R2 = 2.2 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.625
W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V
Макcимальный постоянный ток коллектора (Ic): 0.1
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 250
MHz
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора:
TO-92
SOT-23
SOT-323
SOT-523
- подбор биполярного транзистора по параметрам
DTA123E
Datasheet (PDF)
..1. Size:193K utc
dta123e.pdf 

UNISONIC TECHNOLOGIES CO., LTD DTA123E PNP SILICON TRANSISTOR DIGITAL TRANSISTORS 3(BUILT- IN BIAS RESISTORS) 12SOT-23 FEATURES 3 3* Built-in bias resistors that implies easy ON/OFF applications. 1 1* The bias resistors are thin-film resistors with complete isolation to 22SOT-523allow positive input. SOT-323 EQUIVALENT CIRCUIT 1TO-92 ORDERING INFORMATION
0.1. Size:56K motorola
pdta123et 3.pdf 

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA123ETPNP resistor-equipped transistorProduct specification 1999 May 21Supersedes data of 1998 May 18Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA123ETFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k each) Simplification of circuit design3ndbook, 4 columns
0.2. Size:183K philips
pdta123e series.pdf 

DISCRETE SEMICONDUCTORS DATA SHEETPDTA123E seriesPNP resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 kProduct data sheet 2004 Aug 02Supersedes data of 2004 Apr 07NXP Semiconductors Product data sheetPNP resistor-equipped transistors; PDTA123E seriesR1 = 2.2 k, R2 = 2.2 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI
0.3. Size:56K philips
pdta123et 3.pdf 

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA123ETPNP resistor-equipped transistorProduct specification 1999 May 21Supersedes data of 1998 May 18Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA123ETFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k each) Simplification of circuit design3ndbook, 4 columns
0.4. Size:416K nxp
pdta123ee pdta123eef pdta123ek pdta123em pdta123es pdta123et pdta123eu.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
0.5. Size:139K nxp
pdta123eef pdta123ek pdta123es.pdf 

DISCRETE SEMICONDUCTORS DATA SHEETPDTA123E seriesPNP resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 kProduct data sheet 2004 Aug 02Supersedes data of 2004 Apr 07NXP Semiconductors Product data sheetPNP resistor-equipped transistors; PDTA123E seriesR1 = 2.2 k, R2 = 2.2 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI
0.6. Size:2081K rohm
dta123eefra dta123ekafra dta123emfha dta123euafra.pdf 

DTA123E seriesDatasheetPNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlinelParameter ValueVMT3 EMT3VCC-50VIC(MAX.)-100mA R12.2kDTA123EM DTA123EEDTA123EMFHA DTA123EEFRAR2 (SC-105AA) SOT-416(SC-75A)2.2kUMT3 SMT3lFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 2.2k 2
0.7. Size:338K rohm
dta123ee.pdf 

DTA123E seriesDatasheetPNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)Outline VMT3 EMT3Parameter ValueOUTOUTVCC50VININIC(MAX.) GND100mA GNDR12.2kDTA123EM DTA123EER22.2k (SC-105AA) SOT-416 (SC-75A) UMT3 SMT3OUTOUTFeaturesIN1) Built-In Biasing Resistors, R1 = R2 = 2.2k.INGNDGND2) Built-in bias re
0.8. Size:158K rohm
dta123e-series.pdf 

-100mA / -50V Digital transistors (with built-in resistors) DTA123EM / DTA123EE / DTA123EUA / DTA123EKA Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. (see equivalent circuit) 2) The bias resistors consist of thin-film resistors with complete isolation to
0.9. Size:68K rohm
dta123ee-eua-eka 12sot416 323 346 dta123eka dta123esa.pdf 

TransistorsDigital transistors (built-in resistors)DTA123EE / DTA123EUA / DTA123EKA /DTA123ESAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow positive bi
0.10. Size:227K diodes
ddta123ee.pdf 

DDTA (R1 = R2 SERIES) EDDTA (R1 = R2 SERIES) E PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-523 Complementary NPN Types Available (DDTC) Dim Min Max Typ Built-In Biasing Resistors, R1 = R2 A 0.15 0.30 0.22 Lead Free/RoHS Compliant (Note 2) TOP VIEW B C B 0.75 0.85 0.80 "Green" Device (Note 3 and 4)
0.11. Size:175K diodes
ddta123eua.pdf 

DDTA (R1 = R2 SERIES) UA PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-323 Complementary NPN Types Available (DDTC) Dim Min Max Built-In Biasing Resistors, R1 = R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B CB 1.15 1.35 "Green" Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 N
0.12. Size:181K diodes
ddta123eka.pdf 

DDTA (R1 = R2 SERIES) KA PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SC-59 A Complementary NPN Types Available (DDTC) Dim Min Max Built-In Biasing Resistors, R1 = R2 A 0.35 0.50 Lead Free/RoHS Compliant (Note 2) B 1.50 1.70 "Green" Device, Note 3 and 4 B CC 2.70 3.00 Mechanical Data D 0.95
0.13. Size:104K diodes
ddta123eca.pdf 

DDTA (R1 = R2 SERIES) CAPNP PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTORFeatures Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Complementary NPN Types Available (DDTC) Case material: Molded Plastic. Green Molding Compound. Built-In Biasing Resistors, R1 = R2 Classification Rating 94V-0 Lead Free, RoHS Compliant (Note
0.14. Size:406K diodes
ddta123eca ddta143eca ddta114eca ddta124eca ddta144eca ddta115eca.pdf 

DDTA (R1 = R2 SERIES) CA PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Complementary NPN Types Available (DDTC) Case Material: Molded Plastic, Green Molding Compound Built-In Biasing Resistors, R1 R2 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully R
0.15. Size:109K onsemi
dta123em3.pdf 

MUN2131, MMUN2131L,MUN5131, DTA123EE,DTA123EM3, NSBA123EF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 2.2 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (B
0.17. Size:109K onsemi
nsvdta123em3t5g.pdf 

MUN2131, MMUN2131L,MUN5131, DTA123EE,DTA123EM3, NSBA123EF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 2.2 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (B
0.18. Size:222K onsemi
dta114eet1g dta114tet1g dta114yet1g dta115eet1g dta123eet1g dta123jet1g dta124eet1g dta124xet1g.pdf 

DTA114EET1 Series,SDTA114EET1 SeriesPreferred DevicesBias Resistor TransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic bias PNP SIL
0.21. Size:133K chenmko
chdta123eegp.pdf 

CHENMKO ENTERPRISE CO.,LTDCHDTA123EEGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cu
0.22. Size:119K chenmko
chdta123ekgp.pdf 

CHENMKO ENTERPRISE CO.,LTDCHDTA123EKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil
0.23. Size:140K chenmko
chdta123eugp.pdf 

CHENMKO ENTERPRISE CO.,LTDCHDTA123EUGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-70/SOT323) SC-70/SOT-323* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cu
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History: F121A
| DTC143ZET1G
| FMMT494
| BLY36
| BFQ268
| FMMT4355
| IDD1416