DTC123E Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTC123E 📄📄
Código: CC3E
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 2.2 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625 W
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 250 MHz
Ganancia de corriente contínua (hFE): 20
Encapsulados: TO-92
SOT-23
SOT-323
SOT-523
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DTC123E datasheet
..1. Size:83K utc
dtc123e.pdf 
UNISONIC TECHNOLOGIES CO., LTD DTC123E NPN SILICON TRANSISTOR DIGITAL TRANSISTORS (BUILT- IN RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free H
0.1. Size:55K motorola
pdtc123et 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123ET NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123ET FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k each) Simplification of circuit design Reduces number of co
0.2. Size:182K philips
pdtc123e series.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PDTC123E series NPN resistor-equipped transistors; R1 = 2.2 k , R2 = 2.2 k Product data sheet 2004 Aug 06 Supersedes data of 2004 Mar 18 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; PDTC123E series R1 = 2.2 k , R2 = 2.2 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNI
0.3. Size:55K philips
pdtc123et 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123ET NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123ET FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k each) Simplification of circuit design Reduces number of co
0.4. Size:139K nxp
pdtc123eef pdtc123ek pdtc123es.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PDTC123E series NPN resistor-equipped transistors; R1 = 2.2 k , R2 = 2.2 k Product data sheet 2004 Aug 06 Supersedes data of 2004 Mar 18 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; PDTC123E series R1 = 2.2 k , R2 = 2.2 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNI
0.5. Size:68K rohm
dtc123ee-eua-eka 22 sot416 323 346.pdf
Transistors Digital transistors (built-in resistors) DTC123EE / DTC123EUA / DTC123EKA DTC123ESA FFeatures FExternal dimensions (Units mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow negative bias
0.6. Size:162K rohm
dtc123e-series.pdf
100mA / 50V Digital transistors (with built-in resistors) DTC123EM / DTC123EE / DTC123EUA / DTC123EKA Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation t
0.7. Size:685K rohm
dtc123ee.pdf
DTC123E series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline VMT3 EMT3 Parameter Value OUT OUT VCC 50V IN IN IC(MAX.) GND 100mA GND R1 2.2kW DTC123EM DTC123EE R2 (SC-105AA) SOT-416 (SC-75A) 2.2kW UMT3 SMT3 OUT OUT lFeatures IN 1) Built-In Biasing Resistors, R1 = R2 = 2.2kW. IN GND GND 2) Built-in bias resi
0.8. Size:76K rohm
dtc123eka dtc123esa dtc123eua.pdf
DTC123EM / DTC123EE / DTC123EUA Transistors DTC123EKA / DTC123ESA Digital transistors (built-in resistors) DTC123EM / DTC123EE / DTC123EUA DTC123EKA / DTC123ESA Equivalent circuit Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input OUT R1 resistors (see equivalent circuit). IN 2) The bias resistors consist of thin-f
0.9. Size:2061K rohm
dtc123eefra dtc123ekafra dtc123emfha dtc123euafra.pdf
DTC123E series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline l Parameter Value VMT3 EMT3 VCC 50V IC(MAX.) 100mA R1 2.2k DTC123EM DTC123EE DTC123EMFHA DTC123EEFRA R2 (SC-105AA) SOT-416(SC-75A) 2.2k UMT3 SMT3 lFeatures l 1) Built-In Biasing Resistors, R1 = R2 = 2.2k
0.10. Size:178K diodes
ddtc123eka.pdf
DDTC (R1 = R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SC-59 Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1 = R2 A 0.35 0.50 Lead Free/RoHS Compliant (Note 2) "Green" Device, Note 3 and 4 B C B 1.50 1.70 C 2.70 3.00 D 0.95 Mechanical Data G G
0.11. Size:545K diodes
ddtc123ee ddtc143ee ddtc114ee ddtc124ee ddtc144ee ddtc115ee.pdf
DDTC (R1 = R2 SERIES) EE NPN PRE-BIASED TRANSISTOR IN SOT523 Features Mechanical Data Epitaxial Planar Die Construction Case SOT523 Complementary PNP Types Available (DDTA) Case Material Molded Plastic, Green Molding Compound Built-In Biasing Resistors, R1 = R2 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes
0.12. Size:89K diodes
ddtc123eua.pdf
DDTC (R1 = R2 SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Product Summary Features and Benefits Epitaxial Planar Die Construction Part Number R1, R2 (NOM) Complementary PNP Types Available (DDTA) DDTC123EUA 2.2K Built-In Biasing Resistors, R1 = R2 DDTC143EUA 4.7K Lead Free , RoHS Compliant (Note 1) Halogen and Antimony Free "Gr
0.13. Size:352K diodes
ddtc123ee.pdf
DDTC (R1 = R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2 Dim Min Max Typ B C Lead Free/RoHS Compliant (Note 1) TOP VIEW A 0.15 0.30 0.22 "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 C 1.45 1.75 1.60 M
0.14. Size:99K diodes
ddtc123eca ddtc143eca ddtc114eca ddtc124eca ddtc144eca ddtc115eca.pdf
DDTC(R1 = R2 SERIES) CA NPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case SOT23 Complementary PNP Types Available (DDTA) Case material Molded Plastic. Green Molding Compound. Built-In Biasing Resistors, R1 = R2 Classification Rating 94V-0 Totally Lead-Free & Fully RoHS complia
0.15. Size:109K onsemi
nsvdtc123em3t5g.pdf
MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 2.2 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT) c
0.16. Size:144K onsemi
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DTC114EET1 Series, SDTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http //onsemi.com device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two r
0.17. Size:389K onsemi
mun2231 mmun2231l mun5231 dtc123ee dtc123em3 nsbc123ef3.pdf
MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 2.2 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT) c
0.18. Size:82K onsemi
dtc114em3t5g dtc114tm3t5g dtc114ym3t5g dtc123em3t5g.pdf
DTC114EM3T5G Series Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor http //onsemi.com contains a single transistor with a monolithic bias network consisting of two resistors; a series base resis
0.19. Size:109K onsemi
dtc123em3.pdf
MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 2.2 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT) c
0.20. Size:145K jiangsu
dtc123eca.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital Transistors (Built-in Resistors) DTC123EM/DTC123EE/DTC123EUA DTC123EKA /DTC123ECA/DTC123ESA Equivalent Circuit DIGITAL TRANSISTOR (NPN) FEATURES Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) The bias resistors consis
0.22. Size:545K lrc
ldtc114em3t5g ldtc124em3t5g ldtc144em3t5g ldtc114ym3t5g ldtc114tm3t5g ldtc143tm3t5g ldtc123em3t5g.pdf
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors NPN Silicon Surface Mount Transistors Series LDTC114EM3T5G LDTC114EM3T5G S-LDTC114EM3T5G Series With Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic
0.23. Size:131K chenmko
chdtc123eugp.pdf
CHENMKO ENTERPRISE CO.,LTD CHDTC123EUGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-70/SOT-323) SC-70/SOT-323 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation
0.24. Size:123K chenmko
chdtc123ekgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHDTC123EKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabi
0.25. Size:130K chenmko
chdtc123eegp.pdf
CHENMKO ENTERPRISE CO.,LTD CHDTC123EEGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation
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