DTC123E Datasheet. Specs and Replacement

Type Designator: DTC123E  📄📄 

SMD Transistor Code: CC3E

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 2.2 kOhm

Built in Bias Resistor R2 = 2.2 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO-92 SOT-23 SOT-323 SOT-523

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DTC123E datasheet

 ..1. Size:83K  utc

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DTC123E

UNISONIC TECHNOLOGIES CO., LTD DTC123E NPN SILICON TRANSISTOR DIGITAL TRANSISTORS (BUILT- IN RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free H... See More ⇒

 0.1. Size:55K  motorola

pdtc123et 3.pdf pdf_icon

DTC123E

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123ET NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123ET FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k each) Simplification of circuit design Reduces number of co... See More ⇒

 0.2. Size:182K  philips

pdtc123e series.pdf pdf_icon

DTC123E

DISCRETE SEMICONDUCTORS DATA SHEET PDTC123E series NPN resistor-equipped transistors; R1 = 2.2 k , R2 = 2.2 k Product data sheet 2004 Aug 06 Supersedes data of 2004 Mar 18 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; PDTC123E series R1 = 2.2 k , R2 = 2.2 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNI... See More ⇒

 0.3. Size:55K  philips

pdtc123et 3.pdf pdf_icon

DTC123E

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123ET NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123ET FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k each) Simplification of circuit design Reduces number of co... See More ⇒

Detailed specifications: DTB123Y, DTB143E, DTC113T, DTC114E, DTC114T, DTC114Y, DTC115E, DTC115T, SS8050, DTC123J, DTC123Y, DTC124E, DTC124T, DTC143E, DTC143T, DTC143X, DTC143Z

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