MJE13003BRH Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJE13003BRH  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20 W

Tensión colector-base (Vcb): 600 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO126 TO126S

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MJE13003BRH datasheet

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MJE13003BRH

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003BR(H) NPN MJE /MJE SERIES TRANSISTORS MJE13003BR(H) NPN MJ

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MJE13003BRH

 5.1. Size:178K  wietron
 mje13003b.pdf pdf_icon

MJE13003BRH

WEITRON MJE13003B High Voltage Fast-switching COLLECTOR 2. NPN Power Transistor P b Lead(Pb)-Free 1. EMITTER 3. 2. COLLECTOR BASE 3. BASE DESCRIPTION 1. The device is manufactured using high voltage EMITTER TO-92 Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enh

 5.2. Size:206K  sisemi
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MJE13003BRH

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003B NPN MJE /MJE SERIES TRANSISTORS MJE13003B NPN MJE

MOSTRAR MÁS

Otros transistores... DTD143E, BUL6802, BUL6821, BUL6822, BUL6822A, BUL6823, BUL6823A, MJE13003BR, 2SC2240, 2SB1334A, MJE13009A, BLD101D, BLD102D, BLD112D, BLD122D, BLD122DL, BLD123D