LB120A3 Todos los transistores

 

LB120A3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LB120A3

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 600 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO92

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LB120A3 datasheet

 ..1. Size:131K  cystek
lb120a3.pdf pdf_icon

LB120A3

Spec. No. C618A3 Issued Date 2009.07.07 CYStech Electronics Corp. Revised Date Page No. 1/3 General Purpose NPN Epitaxial Planar Transistor LB120A3 Features Low collector saturation voltage High breakdown voltage, V =400V (min.) CEO Pb-free package Symbol Outline LB120A3 TO-92 B Base C Collector E Emitter E C B Absolute Maximum Ratings

 8.1. Size:45K  hsmc
hlb120a.pdf pdf_icon

LB120A3

Spec. No. HE6412 HI-SINCERITY Issued Date 1998.12.01 Revised Date 2005.02.05 MICROELECTRONICS CORP. Page No. 1/4 HLB120A NPN Triple Diffused Planar Type High Voltage Transistors Description The HLB120A is a medium power transistor designed for use in switching applications. TO-92 Features High Breakdown Voltage Low Collector Saturation Voltage Fast Switching S

 8.2. Size:206K  dc components
lb120a.pdf pdf_icon

LB120A3

DC COMPONENTS CO., LTD. LB120A DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN TRIPLE DIFFUSED PLANAR TRANSISTOR Description Designed for use in high-voltage switching applications. TO-92 Pinning 1 = Emitter 2 = Collector .190(4.83) .170(4.33) 3 = Base 2oTyp .190(4.83) .170(4.33) Absolute Maximum Ratings(TA=25oC) 2oTyp Characteristic Symbol Rating Unit .500 Min (

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