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LB120A3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LB120A3
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1 W
   Tensión colector-base (Vcb): 600 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 9 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO92
 

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LB120A3 Datasheet (PDF)

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LB120A3

Spec. No. : C618A3 Issued Date : 2009.07.07 CYStech Electronics Corp.Revised Date : Page No. : 1/3 General Purpose NPN Epitaxial Planar Transistor LB120A3Features Low collector saturation voltage High breakdown voltage, V =400V (min.) CEO Pb-free package Symbol Outline LB120A3 TO-92 BBase CCollector EEmitter E C B Absolute Maximum Ratings

 8.1. Size:45K  hsmc
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LB120A3

Spec. No. : HE6412HI-SINCERITYIssued Date : 1998.12.01Revised Date : 2005.02.05MICROELECTRONICS CORP.Page No. : 1/4HLB120ANPN Triple Diffused Planar Type High Voltage TransistorsDescriptionThe HLB120A is a medium power transistor designed for use in switchingapplications.TO-92Features High Breakdown Voltage Low Collector Saturation Voltage Fast Switching S

 8.2. Size:206K  dc components
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LB120A3

DC COMPONENTS CO., LTD.LB120ADISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN TRIPLE DIFFUSED PLANAR TRANSISTORDescriptionDesigned for use in high-voltage switchingapplications.TO-92Pinning1 = Emitter2 = Collector .190(4.83).170(4.33)3 = Base2oTyp.190(4.83).170(4.33)Absolute Maximum Ratings(TA=25oC)2oTypCharacteristic Symbol Rating Unit.500Min(

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History: UN5118 | GS9018E

 

 
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