All Transistors. LB120A3 Datasheet

 

LB120A3 Datasheet and Replacement


   Type Designator: LB120A3
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO92
 

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LB120A3 Datasheet (PDF)

 ..1. Size:131K  cystek
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LB120A3

Spec. No. : C618A3 Issued Date : 2009.07.07 CYStech Electronics Corp.Revised Date : Page No. : 1/3 General Purpose NPN Epitaxial Planar Transistor LB120A3Features Low collector saturation voltage High breakdown voltage, V =400V (min.) CEO Pb-free package Symbol Outline LB120A3 TO-92 BBase CCollector EEmitter E C B Absolute Maximum Ratings

 8.1. Size:45K  hsmc
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LB120A3

Spec. No. : HE6412HI-SINCERITYIssued Date : 1998.12.01Revised Date : 2005.02.05MICROELECTRONICS CORP.Page No. : 1/4HLB120ANPN Triple Diffused Planar Type High Voltage TransistorsDescriptionThe HLB120A is a medium power transistor designed for use in switchingapplications.TO-92Features High Breakdown Voltage Low Collector Saturation Voltage Fast Switching S

 8.2. Size:206K  dc components
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LB120A3

DC COMPONENTS CO., LTD.LB120ADISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN TRIPLE DIFFUSED PLANAR TRANSISTORDescriptionDesigned for use in high-voltage switchingapplications.TO-92Pinning1 = Emitter2 = Collector .190(4.83).170(4.33)3 = Base2oTyp.190(4.83).170(4.33)Absolute Maximum Ratings(TA=25oC)2oTypCharacteristic Symbol Rating Unit.500Min(

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: T03N100GP | T2015

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