All Transistors. LB120A3 Datasheet

 

LB120A3 Datasheet and Replacement


   Type Designator: LB120A3
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO92
 

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LB120A3 Datasheet (PDF)

 ..1. Size:131K  cystek
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LB120A3

Spec. No. : C618A3 Issued Date : 2009.07.07 CYStech Electronics Corp.Revised Date : Page No. : 1/3 General Purpose NPN Epitaxial Planar Transistor LB120A3Features Low collector saturation voltage High breakdown voltage, V =400V (min.) CEO Pb-free package Symbol Outline LB120A3 TO-92 BBase CCollector EEmitter E C B Absolute Maximum Ratings

 8.1. Size:45K  hsmc
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LB120A3

Spec. No. : HE6412HI-SINCERITYIssued Date : 1998.12.01Revised Date : 2005.02.05MICROELECTRONICS CORP.Page No. : 1/4HLB120ANPN Triple Diffused Planar Type High Voltage TransistorsDescriptionThe HLB120A is a medium power transistor designed for use in switchingapplications.TO-92Features High Breakdown Voltage Low Collector Saturation Voltage Fast Switching S

 8.2. Size:206K  dc components
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LB120A3

DC COMPONENTS CO., LTD.LB120ADISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN TRIPLE DIFFUSED PLANAR TRANSISTORDescriptionDesigned for use in high-voltage switchingapplications.TO-92Pinning1 = Emitter2 = Collector .190(4.83).170(4.33)3 = Base2oTyp.190(4.83).170(4.33)Absolute Maximum Ratings(TA=25oC)2oTypCharacteristic Symbol Rating Unit.500Min(

Datasheet: BLD139DL , BLD155DL , BLDB128D , BUL68H5T , MJE13001AH , MJE13001H , MJE13002AHT , MJE13003HT , AC125 , 2N4401A3 , 2N4403A3 , BC517A3 , BC807N3 , BC817N3 , BC847N3 , BCP53L3 , BCP56L3 .

History: 92PE37C | TN2218 | CHIMB9GP | S8050MG-C | TP3905 | T03N100GP | 2SD1468S

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