LB120A3 Specs and Replacement
Type Designator: LB120A3
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO92
LB120A3 Substitution
LB120A3 datasheet
lb120a3.pdf
Spec. No. C618A3 Issued Date 2009.07.07 CYStech Electronics Corp. Revised Date Page No. 1/3 General Purpose NPN Epitaxial Planar Transistor LB120A3 Features Low collector saturation voltage High breakdown voltage, V =400V (min.) CEO Pb-free package Symbol Outline LB120A3 TO-92 B Base C Collector E Emitter E C B Absolute Maximum Ratings... See More ⇒
hlb120a.pdf
Spec. No. HE6412 HI-SINCERITY Issued Date 1998.12.01 Revised Date 2005.02.05 MICROELECTRONICS CORP. Page No. 1/4 HLB120A NPN Triple Diffused Planar Type High Voltage Transistors Description The HLB120A is a medium power transistor designed for use in switching applications. TO-92 Features High Breakdown Voltage Low Collector Saturation Voltage Fast Switching S... See More ⇒
lb120a.pdf
DC COMPONENTS CO., LTD. LB120A DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN TRIPLE DIFFUSED PLANAR TRANSISTOR Description Designed for use in high-voltage switching applications. TO-92 Pinning 1 = Emitter 2 = Collector .190(4.83) .170(4.33) 3 = Base 2oTyp .190(4.83) .170(4.33) Absolute Maximum Ratings(TA=25oC) 2oTyp Characteristic Symbol Rating Unit .500 Min (... See More ⇒
Detailed specifications: BLD139DL , BLD155DL , BLDB128D , BUL68H5T , MJE13001AH , MJE13001H , MJE13002AHT , MJE13003HT , 2N5551 , 2N4401A3 , 2N4403A3 , BC517A3 , BC807N3 , BC817N3 , BC847N3 , BCP53L3 , BCP56L3 .
Keywords - LB120A3 pdf specs
LB120A3 cross reference
LB120A3 equivalent finder
LB120A3 pdf lookup
LB120A3 substitution
LB120A3 replacement
