BTA1037N3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Spec. No. : C306N3 Issued Date : 2002.05.11 CYStech Electronics Corp.Revised Date : 2014.06.04 Page No. : 1/8 General Purpose PNP Epitaxial Planar Transistor BTA1037N3 Description The BTA1037N3 is designed for using in driver stage of AF amplifier and general purpose amplification. Excellent h linearity FE Complementary to BTC2412N3. Pb-free lead plating

Spec. No. : C202N3 Issued Date : 2002.05.11 CYStech Electronics Corp.Revised Date : 2014.04.28 Page No. : 1/8 General Purpose PNP Epitaxial Planar Transistor BTA1036N3Description The BTA1036N3 is designed for using in driver stage of AF amplifier and general purpose amplification. Large IC , IC(Max)= -0.6A Low VCE(sat), ideal for low-voltage operation. Co

Spec. No. : C305S3-R Issued Date : 2003.11.18 CYStech Electronics Corp.Revised Date : 2005.08.31 Page No. : 1/5 General Purpose PNP Epitaxial Planar Transistor BTA1036S3Description The BTA1036S3 is designed for general purpose amplifier applications. It is housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. Low V CE(sat

Spec. No. : C233K3 Issued Date : 2013.05.09 CYStech Electronics Corp.Revised Date : 2013.12.25 Page No. : 1/7 PNP Epitaxial Planar Transistor BTA1013K3Features Low V , V = -387mV (Typ.) @ I /I =-1A/-100mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-160V CEO Complementary to BTC2383K3 Pb-free lead plating and halogen-free package Symbol Outline B

Spec. No. : C601E3 "BTA1012E3" Issued Date : 2004.07.26 CYStech Electronics Corp. Revised Date : Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTA1012E3 Features Low VCE(sat), VCE(sat)=-0.4 V (typical), at IC / IB = -3A / -0.15A Excellent DC current gain characteristics Wide SOA Symbol Outline BTA1012E3 TO-220AB BBase C

Spec. No. : C306A3-T "BTA1015A3" Issued Date : 2003.08.26 CYStech Electronics Corp. Revised Date : Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BTA1015A3Description The BTA1015A3 is designed for use in driver stage of AF amplifier and general purpose amplification. High voltage and high current : V =-50V(min), I =-150mA(max) CEO C

Spec. No. : C621K3 Issued Date : 2013.03.06 CYStech Electronics Corp.Revised Date : 2013.12.25 Page No. : 1/8 PNP Epitaxial Planar Transistor BTA1020K3Features Low V , V = -215mV (Typ.) @ I /I =-1A/-50mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-50V CEO Complementary to BTC2655K3 Pb-free lead plating and halogen-free package Symbol Outline BTA

MMBTA10 / MMBTA11 NPN Silicon Epitaxial Planar Transistor VHF / UHF transistor TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 oC)Parameter Symbol Rating UnitCollector Base Voltage VCBO 30 VCollector Emitter Voltage VCEO 25 VEmitter Base Voltage VEBO 3 VCollector Current IC 100 mATotal Dissipation Ptot 200 mWOJunction Temperature Tj 150 C OStorage Temperatur

SEMICONDUCTORMMBTH10QTECHNICAL DATAVHF/UHF TransistorsWe declare that the material of product compliance with RoHS requirements.Ordering InformationDevice Marking Shipping3000/Tape&Reel MMBTH10Q 3EQ3MAXIMUM RATINGS2Rating Symbol Value Unit1CollectorEmitter Voltage V CEO 25 V SOT23CollectorBase Voltage V CBO 30 VEmitterBase Voltage V EBO 3.0 VCOLLE