BTA1037N3 - описание и поиск аналогов

Spec. No. C306N3 Issued Date 2002.05.11 CYStech Electronics Corp. Revised Date 2014.06.04 Page No. 1/8 General Purpose PNP Epitaxial Planar Transistor BTA1037N3 Description The BTA1037N3 is designed for using in driver stage of AF amplifier and general purpose amplification. Excellent h linearity FE Complementary to BTC2412N3. Pb-free lead plating

Spec. No. C202N3 Issued Date 2002.05.11 CYStech Electronics Corp. Revised Date 2014.04.28 Page No. 1/8 General Purpose PNP Epitaxial Planar Transistor BTA1036N3 Description The BTA1036N3 is designed for using in driver stage of AF amplifier and general purpose amplification. Large IC , IC(Max)= -0.6A Low VCE(sat), ideal for low-voltage operation. Co

Spec. No. C305S3-R Issued Date 2003.11.18 CYStech Electronics Corp. Revised Date 2005.08.31 Page No. 1/5 General Purpose PNP Epitaxial Planar Transistor BTA1036S3 Description The BTA1036S3 is designed for general purpose amplifier applications. It is housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. Low V CE(sat

Spec. No. C233K3 Issued Date 2013.05.09 CYStech Electronics Corp. Revised Date 2013.12.25 Page No. 1/7 PNP Epitaxial Planar Transistor BTA1013K3 Features Low V , V = -387mV (Typ.) @ I /I =-1A/-100mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-160V CEO Complementary to BTC2383K3 Pb-free lead plating and halogen-free package Symbol Outline B

Spec. No. C601E3 "BTA1012E3" Issued Date 2004.07.26 CYStech Electronics Corp. Revised Date Page No. 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTA1012E3 Features Low VCE(sat), VCE(sat)=-0.4 V (typical), at IC / IB = -3A / -0.15A Excellent DC current gain characteristics Wide SOA Symbol Outline BTA1012E3 TO-220AB B Base C

Spec. No. C306A3-T "BTA1015A3" Issued Date 2003.08.26 CYStech Electronics Corp. Revised Date Page No. 1/4 General Purpose PNP Epitaxial Planar Transistor BTA1015A3 Description The BTA1015A3 is designed for use in driver stage of AF amplifier and general purpose amplification. High voltage and high current V =-50V(min), I =-150mA(max) CEO C

Spec. No. C621K3 Issued Date 2013.03.06 CYStech Electronics Corp. Revised Date 2013.12.25 Page No. 1/8 PNP Epitaxial Planar Transistor BTA1020K3 Features Low V , V = -215mV (Typ.) @ I /I =-1A/-50mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-50V CEO Complementary to BTC2655K3 Pb-free lead plating and halogen-free package Symbol Outline BTA

MMBTA10 / MMBTA11 NPN Silicon Epitaxial Planar Transistor VHF / UHF transistor TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 oC) Parameter Symbol Rating Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 3 V Collector Current IC 100 mA Total Dissipation Ptot 200 mW O Junction Temperature Tj 150 C O Storage Temperatur

SEMICONDUCTOR MMBTH10Q TECHNICAL DATA VHF/UHF Transistors We declare that the material of product compliance with RoHS requirements. Ordering Information Device Marking Shipping 3000/Tape&Reel MMBTH10Q 3EQ 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit 1 Collector Emitter Voltage V CEO 25 V SOT 23 Collector Base Voltage V CBO 30 V Emitter Base Voltage V EBO 3.0 V COLLE