BTA1300A3 Todos los transistores

Spec. No. C816A3 Issued Date 2003.04.15 CYStech Electronics Corp. Revised Date Page No. 1/4 Low V PNP Epitaxial Planar Transistor CE(SAT) BTA1300A3 Description The BTA1300A3 is designed especially for use in strobo flash and medium power amplifier applications. Features High DC current gain and excellent hFE linearity. HFE(1)=140 600(VCE=-1V,IC=-0.5A) H

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA13LT1/D MMBTA13LT1 Darlington Amplifier Transistors MMBTA14LT1 * NPN Silicon COLLECTOR 3 *Motorola Preferred Device BASE 1 3 EMITTER 2 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector Emitter Voltage VCES 30 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Collector Base Voltage VCBO 30 Vdc Emitte

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBTA13; PMBTA14 NPN Darlington transistors 1999 Apr 29 Product specification Supersedes data of 1997 Apr 18 Philips Semiconductors Product specification NPN Darlington transistors PMBTA13; PMBTA14 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 30 V) 1 base High DC current gain (

January 2005 MMBTA13 NPN Darlington Transistor This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. Sourced from process 05. See MPSA14 for characteristics. 3 2 SOT-23 1 Mark 1M 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-

NPN Silicon Darlington Transistors SMBTA 13 SMBTA 14 High DC current gain High collector current Collector-emitter saturation voltage Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 SMBTA 13 s1M Q68000-A6475 B E C SOT-23 SMBTA 14 s1N Q68000-A6476 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 30 V Collector-base voltage VC

MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L Darlington Amplifier Transistors NPN Silicon http //onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS SOT-23 (TO-236) Compliant* CASE 318 STYLE 6 COLLECTOR 3 MAXIM

UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a darlington transistor. FEATURES 1 *Collector-Emitter Voltage Vces = 30V *Collector Dissipation Pc ( mas ) = 625 mW SOT-23 1 EMITTER 2 BASE 3 COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified ) PARAMETER SYMBOL VALUE UNIT Collector-B

CMBTA13 NPN Small-Signal Darlington Transistors Pin configuration 1. BASE 2. EMITTER 3. COLLECTOR 3 1 2 Unit inch (mm) Absolute Maximum Ratings Symbol Value UNIT Collector-emmitter voltage (open base) VCES max 30 V VBE = 0 IC max 300 mA Collector current (d.c.) Total power dissipation up to Ptot max 250 mW Tamb = 25oC o Tj max 150 Junction Temperature C D.C. curren

MMBTA13 MMBTA14 Elektronische Bauelemente Darlington Amplifier Transistor NPN Silicon RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 Dim Min Max A L A 2.800 3.040 COLLECTOR 3 B 1.200 1.400 3 3 C 0.890 1.110 S BASE 1 B 1 2 1 D 0.370 0.500 2 G 1.780 2.040 V G EMITTER 2 H 0.013 0.100 J 0.085 0.177 C FEATURES K 0.450 0.600 H J L 0.890 1.0

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA13 CMBTA14 N P N SMALL SIGNAL DARLINGTON TRANSISTORS N P N transistors Marking PACKAGE OUTLINE DETAILS CMBTA13 = 1M ALL DIMENSIONS IN mm CMBTA14 = 1N Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector emitter v

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTA13 TRANSISTOR (NPN) Unit mm FEATURES 1. BASE Darlington Amplifier 2. EMITTER 3. COLLECTOR Marking K2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base

SEMICONDUCTOR MMBTA13/14 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. E L B L DIM MILLIMETERS _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 MAXIMUM RATING (Ta=25 ) E 2.40+0.30/-0.20 1 G 1.90 CHARACTERISTIC SYMBOL RATING UNIT H 0.95 J 0.13+0.10/-0.05 VCBO Collector-Base Voltage 30 V K 0.00 0.10

MMBTA13,14 TRANSISTOR (NPN) SOT-23 FEATURES Darlington Amplifier Unit mm 1. BASE Marking MMBTA13 K2D; MMBTA14 K3D 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector Current -Continuous 0.3 A PC C

MMBTA13,14 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Darlington Amplifier Marking MMBTA13 K2D; MMBTA14 K3D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector

MMBTA13 MMBTA14 COLLECTOR 3 Darlington Amplifier Transistors NPN BASE 1 EMITTER 2 MA XIMUM R AT ING S R ating S ymbol Value Unit C ollector- E mitter Voltage V 30 V dc C E S 3 C ollector- B as e Voltage V 30 V dc C B O 1 E mitter- B as e Voltage V 10 V dc E B O 2 C ollector C urrent - C ontinuous IC 300 mAdc T HE R MA L C HA R A C T E R IS T IC S S OT -23 C harac teris t

Spec. No. HE6842 HI-SINCERITY Issued Date 1994.07.29 Revised Date 2004.09.08 MICROELECTRONICS CORP. Page No. 1/4 HMBTA13 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Amplifier Transistor SOT-23 Absolute Maximum Ratings Maximum Temperatures Storage Temperature.......................................................................................................

LESHAN RADIO COMPANY, LTD. Darlington Amplifier Transistors We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring LMBTA13LT1G Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LMBTA14LT1G ORDERING INFORMATION S-LMBTA13LT1G Device Marking Shipping S-LMBTA14LT1G (S

SMD Type Diodes Darlington Transistors MMBTA13 (KMBTA13) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=0.3A Collector Emitter Voltage VCEO=30V 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO

CHENMKO ENTERPRISE CO.,LTD CHBTA13GP SURFACE MOUNT NPN Darlington Transistor VOLTAGE 30 Volts CURRENT 1.2 Ampere APPLICATION * High current gain applications. FEATURE SOT-23 * Small surface mounting type. (SOT-23) * High current (Max.=1200mA). * Suitable for high packing density. * Low voltage (Max.=30V) . * High saturation current and current gain capability. (1) (3) CONSTRUC