BTA1300A3 Datasheet and Replacement

Spec. No. : C816A3 Issued Date : 2003.04.15 CYStech Electronics Corp. Revised Date : Page No. : 1/4 Low V PNP Epitaxial Planar Transistor CE(SAT)BTA1300A3Description The BTA1300A3 is designed especially for use in strobo flash and medium power amplifier applications. Features High DC current gain and excellent hFE linearity. HFE(1)=140600(VCE=-1V,IC=-0.5A) H

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTA13LT1/DMMBTA13LT1Darlington Amplifier TransistorsMMBTA14LT1*NPN SiliconCOLLECTOR 3*Motorola Preferred DeviceBASE13EMITTER 21MAXIMUM RATINGS2Rating Symbol Value UnitCollectorEmitter Voltage VCES 30 VdcCASE 31808, STYLE 6SOT23 (TO236AB)CollectorBase Voltage VCBO 30 VdcEmitte

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBTA13; PMBTA14NPN Darlington transistors1999 Apr 29Product specificationSupersedes data of 1997 Apr 18Philips Semiconductors Product specificationNPN Darlington transistors PMBTA13; PMBTA14FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 30 V)1 base High DC current gain (

January 2005MMBTA13NPN Darlington Transistor This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. Sourced from process 05. See MPSA14 for characteristics.32SOT-231Mark: 1M1. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCES Collector-

NPN Silicon Darlington Transistors SMBTA 13SMBTA 14 High DC current gain High collector current Collector-emitter saturation voltageType Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3SMBTA 13 s1M Q68000-A6475 B E C SOT-23SMBTA 14 s1N Q68000-A6476Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE0 30 VCollector-base voltage VC

MMBTA13L, SMMBTA13L,MMBTA14L, SMMBTA14LDarlington AmplifierTransistorsNPN Siliconhttp://onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSOT-23 (TO-236)Compliant* CASE 318STYLE 6COLLECTOR 3MAXIM

UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTORDARLINGTON TRANSISTORDESCRIPTIONThe UTC MMBTA13 is a darlington transistor.FEATURES1*Collector-Emitter Voltage: Vces = 30V*Collector Dissipation : Pc ( mas ) = 625 mWSOT-231:EMITTER 2:BASE 3:COLLECTORABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified )PARAMETER SYMBOL VALUE UNITCollector-B

CMBTA13NPN Small-Signal Darlington Transistors Pin configuration:1. BASE2. EMITTER3. COLLECTOR312Unit: inch (mm)Absolute Maximum RatingsSymbol Value UNITCollector-emmitter voltage (open base)VCES max 30 VVBE = 0ICmax 300 mACollector current (d.c.)Total power dissipation up toPtotmax 250 mWTamb = 25oCoTj max 150Junction Temperature CD.C. curren

MMBTA13 MMBTA14Elektronische Bauelemente Darlington Amplifier Transistor NPN SiliconRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeSOT-23Dim Min MaxAL A 2.800 3.040COLLECTOR 3B 1.200 1.4003 3C 0.890 1.110SBASE 1 B1 21 D 0.370 0.5002G 1.780 2.040V GEMITTER 2H 0.013 0.100J 0.085 0.177CFEATURES K 0.450 0.600HJL 0.890 1.0

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBTA13CMBTA14NPN SMALLSIGNAL DARLINGTON TRANSISTORSNPN transistorsMarkingPACKAGE OUTLINE DETAILSCMBTA13 = 1M ALL DIMENSIONS IN mmCMBTA14 = 1NPin configuration1 = BASE2 = EMITTER3 = COLLECTORABSOLUTE MAXIMUM RATINGSCollectoremitter v

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTA13 TRANSISTOR (NPN) Unit : mm FEATURES1. BASE Darlington Amplifier 2. EMITTER3. COLLECTORMarking : K2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base

SEMICONDUCTOR MMBTA13/14TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR.EL B LDIM MILLIMETERS_+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05MAXIMUM RATING (Ta=25 )E 2.40+0.30/-0.201G 1.90CHARACTERISTIC SYMBOL RATING UNITH 0.95J 0.13+0.10/-0.05VCBOCollector-Base Voltage 30 VK 0.00 ~ 0.10

MMBTA13,14 TRANSISTOR (NPN) SOT-23 FEATURES Darlington Amplifier Unit : mm 1. BASE Marking : MMBTA13:K2D; MMBTA14:K3D 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector Current -Continuous 0.3 A PC C

MMBTA13,14 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Darlington Amplifier Marking : MMBTA13:K2D; MMBTA14:K3D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector

MMBTA13MMBTA14COLLECTOR 3Darlington AmplifierTransistorsNPN BASE1EMITTER 2MA XIMUM R AT ING SR ating S ymbol Value UnitC ollector- E mitter Voltage V 30 V dcC E S 3C ollector- B as e Voltage V 30 V dcC B O1E mitter- B as e Voltage V 10 V dcE B O2C ollector C urrent - C ontinuous IC 300 mAdcT HE R MA L C HA R A C T E R IS T IC SS OT -23 C harac teris t

Spec. No. : HE6842HI-SINCERITYIssued Date : 1994.07.29Revised Date : 2004.09.08MICROELECTRONICS CORP.Page No. : 1/4HMBTA13NPN EPITAXIAL PLANAR TRANSISTORDescriptionDarlington Amplifier TransistorSOT-23Absolute Maximum Ratings Maximum TemperaturesStorage Temperature.......................................................................................................

LESHAN RADIO COMPANY, LTD.Darlington Amplifier Transistors We declare that the material of productcompliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring LMBTA13LT1GUnique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.LMBTA14LT1GORDERING INFORMATIONS-LMBTA13LT1GDevice Marking ShippingS-LMBTA14LT1G(S

SMD Type DiodesDarlington TransistorsMMBTA13 (KMBTA13)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=0.3A Collector Emitter Voltage VCEO=30V1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO

CHENMKO ENTERPRISE CO.,LTDCHBTA13GPSURFACE MOUNT NPN Darlington TransistorVOLTAGE 30 Volts CURRENT 1.2 AmpereAPPLICATION* High current gain applications.FEATURESOT-23* Small surface mounting type. (SOT-23)* High current (Max.=1200mA). * Suitable for high packing density.* Low voltage (Max.=30V) .* High saturation current and current gain capability.(1)(3)CONSTRUC