BTA1542N3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BTA1542N3
Código: SH
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 380 MHz
Capacitancia de salida (Cc): 25 pF
Ganancia de corriente contínua (hfe): 250
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar BTA1542N3
BTA1542N3 Datasheet (PDF)
bta1542n3.pdf
Spec. No. : C599N3 Issued Date : 2005.12.30 CYStech Electronics Corp.Revised Date : 2011.11.29 Page No. : 1/8 PNP Epitaxial Planar Transistor BTA1542N3 Features Large current capability Low collector-to-emitter saturation voltage High speed switching Ultra small package facilitates miniaturization in end products High allowable power dissipation
bta1514m3.pdf
Spec. No. : C307M3 Issued Date : 2007.01.10 CYStech Electronics Corp.Revised Date : Page No. : 1/5 General Purpose PNP Epitaxial Planar Transistor BTA1514M3Description The BTA1514M3 is designed for general purpose application requiring high breakdown voltage. Large IC , IC( Max) = -0.6A High BVCEO, BVCEO= -150V Complementary to BTC3906M3. Pb-free pac
bta1576s3.pdf
Spec. No. : C306S3 Issued Date : 2002.05.11 Revised Date : 2014.01.24 CYStech Electronics Corp. Page No. : 1/7 General Purpose PNP Epitaxial Planar Transistor BTA1576S3 Description The BTA1576S3 is designed for using in driver stage of AF amplifier and general purpose amplification. Excellent h linearity FE Complementary to BTC4081S3. Pb-free lead plating
bta1579s3.pdf
Spec. No. : C307S3 Issued Date : 2003.06.27 CYStech Electronics Corp.Revised Date : 2011.09.20 Page No. : 1/6 General Purpose PNP Epitaxial Planar Transistor BTA1579S3Description The BTP1579S3 is designed for high voltage amplification application. High BVCEO, BVCEO= -160V Complementary to BTC4102S3. Pb-free lead plating and halogen-free package Symbol O
bta1514n3.pdf
Spec. No. : C307N3 Issued Date : 2003.06.27 CYStech Electronics Corp.Revised Date : 2014.04.15 Page No. : 1/6 General Purpose PNP Epitaxial Planar Transistor BVCEO -160VBTA1514N3IC -0.6AVCESAT(MAX) -0.3VDescription The BTA1514N3 is designed for general purpose application requiring high breakdown voltage. Large IC , IC( Max) = -0.6A High BVCEO, BVCEO= -16
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: KT922B | GT905A
Liste
Recientemente añadidas las descripciónes de los transistores:
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