BTA1542N3 Specs and Replacement

Type Designator: BTA1542N3

SMD Transistor Code: SH

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 380 MHz

Collector Capacitance (Cc): 25 pF

Forward Current Transfer Ratio (hFE), MIN: 250

Noise Figure, dB: -

Package: SOT23

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BTA1542N3 datasheet

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BTA1542N3

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BTA1542N3

Spec. No. C307M3 Issued Date 2007.01.10 CYStech Electronics Corp. Revised Date Page No. 1/5 General Purpose PNP Epitaxial Planar Transistor BTA1514M3 Description The BTA1514M3 is designed for general purpose application requiring high breakdown voltage. Large IC , IC( Max) = -0.6A High BVCEO, BVCEO= -150V Complementary to BTC3906M3. Pb-free pac... See More ⇒

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BTA1542N3

Spec. No. C306S3 Issued Date 2002.05.11 Revised Date 2014.01.24 CYStech Electronics Corp. Page No. 1/7 General Purpose PNP Epitaxial Planar Transistor BTA1576S3 Description The BTA1576S3 is designed for using in driver stage of AF amplifier and general purpose amplification. Excellent h linearity FE Complementary to BTC4081S3. Pb-free lead plating... See More ⇒

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BTA1542N3

Spec. No. C307S3 Issued Date 2003.06.27 CYStech Electronics Corp. Revised Date 2011.09.20 Page No. 1/6 General Purpose PNP Epitaxial Planar Transistor BTA1579S3 Description The BTP1579S3 is designed for high voltage amplification application. High BVCEO, BVCEO= -160V Complementary to BTC4102S3. Pb-free lead plating and halogen-free package Symbol O... See More ⇒

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Detailed specifications: BTA1210F3, BTA1210FP, BTA1210J3, BTA1210T3, BTA1270A3, BTA1300A3, BTA1514M3, BTA1514N3, 2SC4793, BTA1576S3, BTA1579S3, BTA1640F3, BTA1640FP, BTA1640I3, BTA1640J3, BTA1640T3, BTA1664L3

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