All Transistors. BTA1542N3 Datasheet

 

BTA1542N3 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BTA1542N3
   SMD Transistor Code: SH
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 380 MHz
   Collector Capacitance (Cc): 25 pF
   Forward Current Transfer Ratio (hFE), MIN: 250
   Noise Figure, dB: -
   Package: SOT23

 BTA1542N3 Transistor Equivalent Substitute - Cross-Reference Search

   

BTA1542N3 Datasheet (PDF)

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bta1542n3.pdf

BTA1542N3
BTA1542N3

Spec. No. : C599N3 Issued Date : 2005.12.30 CYStech Electronics Corp.Revised Date : 2011.11.29 Page No. : 1/8 PNP Epitaxial Planar Transistor BTA1542N3 Features Large current capability Low collector-to-emitter saturation voltage High speed switching Ultra small package facilitates miniaturization in end products High allowable power dissipation

 9.1. Size:158K  cystek
bta1514m3.pdf

BTA1542N3
BTA1542N3

Spec. No. : C307M3 Issued Date : 2007.01.10 CYStech Electronics Corp.Revised Date : Page No. : 1/5 General Purpose PNP Epitaxial Planar Transistor BTA1514M3Description The BTA1514M3 is designed for general purpose application requiring high breakdown voltage. Large IC , IC( Max) = -0.6A High BVCEO, BVCEO= -150V Complementary to BTC3906M3. Pb-free pac

 9.2. Size:266K  cystek
bta1576s3.pdf

BTA1542N3
BTA1542N3

Spec. No. : C306S3 Issued Date : 2002.05.11 Revised Date : 2014.01.24 CYStech Electronics Corp. Page No. : 1/7 General Purpose PNP Epitaxial Planar Transistor BTA1576S3 Description The BTA1576S3 is designed for using in driver stage of AF amplifier and general purpose amplification. Excellent h linearity FE Complementary to BTC4081S3. Pb-free lead plating

 9.3. Size:253K  cystek
bta1579s3.pdf

BTA1542N3
BTA1542N3

Spec. No. : C307S3 Issued Date : 2003.06.27 CYStech Electronics Corp.Revised Date : 2011.09.20 Page No. : 1/6 General Purpose PNP Epitaxial Planar Transistor BTA1579S3Description The BTP1579S3 is designed for high voltage amplification application. High BVCEO, BVCEO= -160V Complementary to BTC4102S3. Pb-free lead plating and halogen-free package Symbol O

 9.4. Size:305K  cystek
bta1514n3.pdf

BTA1542N3
BTA1542N3

Spec. No. : C307N3 Issued Date : 2003.06.27 CYStech Electronics Corp.Revised Date : 2014.04.15 Page No. : 1/6 General Purpose PNP Epitaxial Planar Transistor BVCEO -160VBTA1514N3IC -0.6AVCESAT(MAX) -0.3VDescription The BTA1514N3 is designed for general purpose application requiring high breakdown voltage. Large IC , IC( Max) = -0.6A High BVCEO, BVCEO= -16

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N958

 

 
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