BTA1759N3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BTA1759N3

Código: 4Z

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.225 W

Tensión colector-base (Vcb): 400 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 0.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 12 MHz

Capacitancia de salida (Cc): 13 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT23

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BTA1759N3 datasheet

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 bta1759n3.pdf pdf_icon

BTA1759N3

Spec. No. C309N3 Issued Date 2003.05.09 CYStech Electronics Corp. Revised Date 2010.10.19 Page No. 1/6 High Voltage PNP Epitaxial Planar Transistor BVCEO -400V BTA1759N3 IC -0.3A VCESAT(TYP) -0.08V Description High breakdown voltage. (BV =-400V) CEO Low saturation voltage, typical V =-0.2V at Ic/I =-20mA/-2mA. CE(sat) B Wide SOA (safe operation area).

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 bta1759a3.pdf pdf_icon

BTA1759N3

Spec. No. C309A3-R Issued Date 2003.10.15 CYStech Electronics Corp. Revised Date 2012.06.14 Page No. 1/6 High Voltage PNP Epitaxial Planar Transistor BTA1759A3 Description High breakdown voltage. (BV =-400V) CEO Low saturation voltage, typical V = -0.2V at Ic / I = -20mA /-2mA. CE(sat) B Wide SOA (safe operation area). Complementary to BTC4505A3.

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 bta1774c3.pdf pdf_icon

BTA1759N3

Spec. No. C306C3 Issued Date 2004.03.03 CYStech Electronics Corp. Revised Date 2014.03.11 Page No. 1/8 General Purpose PNP Epitaxial Planar Transistor BTA1774C3 Description The BTA1774C3 is designed for use in driver stage of AF amplifier and general purpose amplification. High HFE and excellent linearity Complementary to BTC4617C3. Pb-free lead pla

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 bta1797m3.pdf pdf_icon

BTA1759N3

Spec. No. C623M3 Issued Date 2013.03.19 CYStech Electronics Corp. Revised Date 2013.08.12 Page No. 1/8 Silicon PNP Epitaxial Planar Transistor BVCEO -50V IC -2A BTA1797M3 VCESAT(Max) -0.2V Description Low saturation voltage, V = -0.2V(max.) at I /I =-1A/-50mA. CE(SAT) C B High current capability. Excellent DC current gain characteristics. Pb-free

MOSTRAR MÁS

Otros transistores... BTA1640I3, BTA1640J3, BTA1640T3, BTA1664L3, BTA1664M3, BTA1721N3, BTA1727L3, BTA1759A3, TIP127, BTA1774C3, BTA1797M3, BTA1900M3, BTA1952E3, BTA1952I3, BTA1952J3, BTA1972K3, BTA2029Y3