BTA1759N3 Specs and Replacement

Type Designator: BTA1759N3

SMD Transistor Code: 4Z

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 12 MHz

Collector Capacitance (Cc): 13 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT23

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BTA1759N3 datasheet

 ..1. Size:258K  cystek

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BTA1759N3

Spec. No. C309N3 Issued Date 2003.05.09 CYStech Electronics Corp. Revised Date 2010.10.19 Page No. 1/6 High Voltage PNP Epitaxial Planar Transistor BVCEO -400V BTA1759N3 IC -0.3A VCESAT(TYP) -0.08V Description High breakdown voltage. (BV =-400V) CEO Low saturation voltage, typical V =-0.2V at Ic/I =-20mA/-2mA. CE(sat) B Wide SOA (safe operation area).... See More ⇒

 7.1. Size:233K  cystek

bta1759a3.pdf pdf_icon

BTA1759N3

Spec. No. C309A3-R Issued Date 2003.10.15 CYStech Electronics Corp. Revised Date 2012.06.14 Page No. 1/6 High Voltage PNP Epitaxial Planar Transistor BTA1759A3 Description High breakdown voltage. (BV =-400V) CEO Low saturation voltage, typical V = -0.2V at Ic / I = -20mA /-2mA. CE(sat) B Wide SOA (safe operation area). Complementary to BTC4505A3. ... See More ⇒

 9.1. Size:323K  cystek

bta1774c3.pdf pdf_icon

BTA1759N3

Spec. No. C306C3 Issued Date 2004.03.03 CYStech Electronics Corp. Revised Date 2014.03.11 Page No. 1/8 General Purpose PNP Epitaxial Planar Transistor BTA1774C3 Description The BTA1774C3 is designed for use in driver stage of AF amplifier and general purpose amplification. High HFE and excellent linearity Complementary to BTC4617C3. Pb-free lead pla... See More ⇒

 9.2. Size:262K  cystek

bta1797m3.pdf pdf_icon

BTA1759N3

Spec. No. C623M3 Issued Date 2013.03.19 CYStech Electronics Corp. Revised Date 2013.08.12 Page No. 1/8 Silicon PNP Epitaxial Planar Transistor BVCEO -50V IC -2A BTA1797M3 VCESAT(Max) -0.2V Description Low saturation voltage, V = -0.2V(max.) at I /I =-1A/-50mA. CE(SAT) C B High current capability. Excellent DC current gain characteristics. Pb-free ... See More ⇒

Detailed specifications: BTA1640I3, BTA1640J3, BTA1640T3, BTA1664L3, BTA1664M3, BTA1721N3, BTA1727L3, BTA1759A3, TIP127, BTA1774C3, BTA1797M3, BTA1900M3, BTA1952E3, BTA1952I3, BTA1952J3, BTA1972K3, BTA2029Y3

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