BTA2029Y3 Todos los transistores

Spec. No. C306Y3 Issued Date 2011.11.03 CYStech Electronics Corp. Revised Date 2011.11.04 Page No. 1/7 General Purpose PNP Epitaxial Planar Transistor BTA2029Y3 Description The BTA2029Y3 is designed for use in driver stage of AF amplifier and general purpose amplification. High HFE and excellent linearity Complementary to BTC5658Y3. Pb-free package

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA20LT1/D General Purpose Amplifier MMBTA20LT1 NPN Silicon COLLECTOR 3 1 3 BASE 1 2 2 EMITTER CASE 318 08, STYLE 6 MAXIMUM RATINGS SOT 23 (TO 236AB) Rating Symbol Value Unit Collector Emitter Voltage VCEO 40 Vdc Emitter Base Voltage VEBO 4.0 Vdc Collector Current Continuous IC 100 mAdc THERMAL C

NPN Silicon AF Transistor SMBTA 20 High DC current gain Low collector-emitter saturation voltage Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 SMBTA 20 s1C Q6800-A6477 B E C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 40 V Emitter-base voltage VEB0 4 Collector current IC 100 mA Peak collector current ICM 200 Pea

MMBTA20LT1 General Purpose Amplifier NPN Silicon Features Pb-Free Package is Available http //onsemi.com COLLECTOR MAXIMUM RATINGS 3 Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc 1 BASE Emitter-Base Voltage VEBO 4.0 Vdc Collector Current - Continuous IC 100 mAdc 2 THERMAL CHARACTERISTICS EMITTER Characteristic Symbol Max Unit Total Device Dissipation FR-5

Spec. No. C157J3 Issued Date 2014.12.03 CYStech Electronics Corp. Revised Date 2014.12.04 Page No. 1/7 PNP Epitaxial Planar Silicon Transistor BTA2039J3 Features Large current capability Very low saturation voltage Low collector-to-emitter saturation voltage High speed switching Pb-free lead plating and halogen-free package Symbol Outline T