BTB772AM3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Spec. No. : C817M3-H Issued Date : 2003.06.17 CYStech Electronics Corp. Revised Date:2013.08.12 Page:1/6 Low V PNP Epitaxial Planar Transistor CE(sat)BVCEO -50VIC -3ABTB772AM3 RCESAT(typ) 0.12 Features Low VCE(sat), typically -0.24 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD882AM3 Pb-free lead plating an

Spec. No. : C240M3 CYStech Electronics Corp. Issued Date : 2013.02.19 Revised Date : Page No. : 1/8 Low Vcesat PNP Epitaxial Planar Transistor BTB772AJ3 Features Low VCE(sat), VCE(sat)=-0.3 V (max), at IC / IB = -2A / -0.1A Excellent current gain characteristics Pb-free lead plating and halogen-free package Symbol Outline TO-252AA BTB772AJ3BBase C

Spec. No. : C817A3-H Issued Date : 2003.05.31 CYStech Electronics Corp. Revised Date:2013.03.21 Page:1/6 Low Vcesat PNP Epitaxial Planar Transistor BTB772SA3 Features Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD882SA3 Pb-free lead plating and halogen-free package Symbol Outline BTB77

Spec. No. : C809J3 Issued Date : 2008.06.12 CYStech Electronics Corp. Revised Date: 2010.12.08 Page:1/7 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -30V BTB772J3 IC -3ARCE(SAT) 225m typ.Features Low VCE(sat) Excellent current gain characteristics Complementary to BTD882J3 RoHS compliant package Symbol Outline BTB772J3 TO-252AB TO-252AA

Spec. No. : C809T3 Issued Date : 2008.08.01 CYStech Electronics Corp. Revised Date: Page:1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB772ST3 Features Low VCE(sat), typically -0.45 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Pb-free package Symbol Outline BTB772ST3 TO-126 BBase CCollector EEmitter E C B Absolute

Spec. No. : C817I3-H Issued Date : 2003.04.02 CYStech Electronics Corp. Revised Date: 2011.08.30 Page:1/6 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -30VIC -3ABTB772I3 RCESAT(TYP) 150m Features Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A Excellent current gain characteristics High temperature soldering guaranteed : 265C/5s, 0.25(6.3

Spec. No. : C817T3-H Issued Date : 2002.08.18 CYStech Electronics Corp.Revised Date : 2014.02.17 Page No. : 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB772T3 Features Low VCE(sat), typically -0.3V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD882T3 Pb-free lead plating and halogen-free package Symbol Outline