Биполярный транзистор BTB772AM3 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BTB772AM3
Маркировка: AE
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 80 MHz
Ёмкость коллекторного перехода (Cc): 25 pf
Статический коэффициент передачи тока (hfe): 180
Корпус транзистора: SOT89
Аналоги (замена) для BTB772AM3
BTB772AM3 Datasheet (PDF)
btb772am3.pdf
Spec. No. : C817M3-H Issued Date : 2003.06.17 CYStech Electronics Corp. Revised Date:2013.08.12 Page:1/6 Low V PNP Epitaxial Planar Transistor CE(sat)BVCEO -50VIC -3ABTB772AM3 RCESAT(typ) 0.12 Features Low VCE(sat), typically -0.24 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD882AM3 Pb-free lead plating an
btb772aj3.pdf
Spec. No. : C240M3 CYStech Electronics Corp. Issued Date : 2013.02.19 Revised Date : Page No. : 1/8 Low Vcesat PNP Epitaxial Planar Transistor BTB772AJ3 Features Low VCE(sat), VCE(sat)=-0.3 V (max), at IC / IB = -2A / -0.1A Excellent current gain characteristics Pb-free lead plating and halogen-free package Symbol Outline TO-252AA BTB772AJ3BBase C
btb772sa3.pdf
Spec. No. : C817A3-H Issued Date : 2003.05.31 CYStech Electronics Corp. Revised Date:2013.03.21 Page:1/6 Low Vcesat PNP Epitaxial Planar Transistor BTB772SA3 Features Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD882SA3 Pb-free lead plating and halogen-free package Symbol Outline BTB77
btb772j3.pdf
Spec. No. : C809J3 Issued Date : 2008.06.12 CYStech Electronics Corp. Revised Date: 2010.12.08 Page:1/7 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -30V BTB772J3 IC -3ARCE(SAT) 225m typ.Features Low VCE(sat) Excellent current gain characteristics Complementary to BTD882J3 RoHS compliant package Symbol Outline BTB772J3 TO-252AB TO-252AA
btb772st3.pdf
Spec. No. : C809T3 Issued Date : 2008.08.01 CYStech Electronics Corp. Revised Date: Page:1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB772ST3 Features Low VCE(sat), typically -0.45 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Pb-free package Symbol Outline BTB772ST3 TO-126 BBase CCollector EEmitter E C B Absolute
btb772i3.pdf
Spec. No. : C817I3-H Issued Date : 2003.04.02 CYStech Electronics Corp. Revised Date: 2011.08.30 Page:1/6 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -30VIC -3ABTB772I3 RCESAT(TYP) 150m Features Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A Excellent current gain characteristics High temperature soldering guaranteed : 265C/5s, 0.25(6.3
btb772t3.pdf
Spec. No. : C817T3-H Issued Date : 2002.08.18 CYStech Electronics Corp.Revised Date : 2014.02.17 Page No. : 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB772T3 Features Low VCE(sat), typically -0.3V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD882T3 Pb-free lead plating and halogen-free package Symbol Outline
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS