BTB772ST3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BTB772ST3

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 10 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 80 MHz

Capacitancia de salida (Cc): 55 pF

Ganancia de corriente contínua (hFE): 180

Encapsulados: TO126

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BTB772ST3 datasheet

 ..1. Size:221K  cystek
 btb772st3.pdf pdf_icon

BTB772ST3

Spec. No. C809T3 Issued Date 2008.08.01 CYStech Electronics Corp. Revised Date Page 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB772ST3 Features Low VCE(sat), typically -0.45 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Pb-free package Symbol Outline BTB772ST3 TO-126 B Base C Collector E Emitter E C B Absolute

 7.1. Size:352K  cystek
 btb772sa3.pdf pdf_icon

BTB772ST3

Spec. No. C817A3-H Issued Date 2003.05.31 CYStech Electronics Corp. Revised Date 2013.03.21 Page 1/6 Low Vcesat PNP Epitaxial Planar Transistor BTB772SA3 Features Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD882SA3 Pb-free lead plating and halogen-free package Symbol Outline BTB77

 8.1. Size:272K  cystek
 btb772j3.pdf pdf_icon

BTB772ST3

Spec. No. C809J3 Issued Date 2008.06.12 CYStech Electronics Corp. Revised Date 2010.12.08 Page 1/7 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -30V BTB772J3 IC -3A RCE(SAT) 225m typ. Features Low VCE(sat) Excellent current gain characteristics Complementary to BTD882J3 RoHS compliant package Symbol Outline BTB772J3 TO-252AB TO-252AA

 8.2. Size:247K  cystek
 btb772am3.pdf pdf_icon

BTB772ST3

Spec. No. C817M3-H Issued Date 2003.06.17 CYStech Electronics Corp. Revised Date 2013.08.12 Page 1/6 Low V PNP Epitaxial Planar Transistor CE(sat) BVCEO -50V IC -3A BTB772AM3 RCESAT(typ) 0.12 Features Low VCE(sat), typically -0.24 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD882AM3 Pb-free lead plating an

MOSTRAR MÁS

Otros transistores... BTA4403A3, BTA9012A3, BTB589N3, BTB718N3, BTB772AJ3, BTB772AM3, BTB772I3, BTB772J3, 2SC5198, BTB772T3, BTB818AG6, BTB818N6, BTB826M3, BTB857AD3, BTB857D3, BTB1184J3, BTB1188AM3