BTB772ST3 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BTB772ST3 Specs and Replacement

Type Designator: BTB772ST3

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Collector Capacitance (Cc): 55 pF

Forward Current Transfer Ratio (hFE), MIN: 180

Noise Figure, dB: -

Package: TO126

BTB772ST3 Substitution

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BTB772ST3 datasheet

..1. Size:221K cystek

btb772st3.pdf pdf_icon

Spec. No. C809T3 Issued Date 2008.08.01 CYStech Electronics Corp. Revised Date Page 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB772ST3 Features Low VCE(sat), typically -0.45 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Pb-free package Symbol Outline BTB772ST3 TO-126 B Base C Collector E Emitter E C B Absolute ... See More ⇒

7.1. Size:352K cystek

btb772sa3.pdf pdf_icon

Spec. No. C817A3-H Issued Date 2003.05.31 CYStech Electronics Corp. Revised Date 2013.03.21 Page 1/6 Low Vcesat PNP Epitaxial Planar Transistor BTB772SA3 Features Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD882SA3 Pb-free lead plating and halogen-free package Symbol Outline BTB77... See More ⇒

8.1. Size:272K cystek

btb772j3.pdf pdf_icon

Spec. No. C809J3 Issued Date 2008.06.12 CYStech Electronics Corp. Revised Date 2010.12.08 Page 1/7 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -30V BTB772J3 IC -3A RCE(SAT) 225m typ. Features Low VCE(sat) Excellent current gain characteristics Complementary to BTD882J3 RoHS compliant package Symbol Outline BTB772J3 TO-252AB TO-252AA ... See More ⇒

8.2. Size:247K cystek

btb772am3.pdf pdf_icon

Spec. No. C817M3-H Issued Date 2003.06.17 CYStech Electronics Corp. Revised Date 2013.08.12 Page 1/6 Low V PNP Epitaxial Planar Transistor CE(sat) BVCEO -50V IC -3A BTB772AM3 RCESAT(typ) 0.12 Features Low VCE(sat), typically -0.24 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD882AM3 Pb-free lead plating an... See More ⇒