BTB1198N3 Todos los transistores

 

BTB1198N3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BTB1198N3
   Código: AK
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.56 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 8 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 11 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de transistor bipolar BTB1198N3

 

BTB1198N3 Datasheet (PDF)

 ..1. Size:274K  cystek
 btb1198n3.pdf

BTB1198N3 BTB1198N3

Spec. No. : C824N3 Issued Date : 2006.06.06 CYStech Electronics Corp.Revised Date : 2013.12.13 Page No. : 1/7 PNP Epitaxial Planar Transistor BVCEO -80VIC -1ABTB1198N3RCE(SAT) 320m(typ.) Features Low V , V = -0.16V (Typ.) @ I /I =-500mA/-50mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-80V CEO Complementary to BTD1782N3 Pb-free and Halogen-f

 7.1. Size:258K  cystek
 btb1198a3.pdf

BTB1198N3 BTB1198N3

Spec. No. : C824A3 Issued Date : 2007.02.28 CYStech Electronics Corp.Revised Date : 2012.12.27 Page No. : 1/7 PNP Epitaxial Planar Transistor BTB1198A3Features Low V , V = -0.16V (Typ.) @ I /I =-500mA/-50mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-80V CEO Complementary to BTD1768A3 Pb-free lead plating and halogen-free package Symbol Outline

 7.2. Size:291K  cystek
 btb1198k3.pdf

BTB1198N3 BTB1198N3

Spec. No. : C824K3 Issued Date : 2008.10.31 CYStech Electronics Corp.Revised Date :2013.10.09 Page No. : 1/7 PNP Epitaxial Planar Transistor BTB1198K3Features Low V , V = -0.16V (Typ.) @ I /I =-500mA/-50mA CE(SAT) CE(SAT) C B High breakdown voltage, BV =-100V CEO Complementary to BTD1768K3 Pb-free lead plating and halogen-free package Symbol Outline

 7.3. Size:290K  cystek
 btb1198m3.pdf

BTB1198N3 BTB1198N3

Spec. No. : C824M3 Issued Date : 2007.05.04 CYStech Electronics Corp.Revised Date : 2014.02.24 Page No. : 1/6 General Purpose PNP Epitaxial Planar Transistor BTB1198M3Features High breakdown voltage, BV -100V CEO Large continuous collector current capability Low collector saturation voltage Complementary to BTD5213M3 Pb-free lead plating and ha

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