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BTB1198N3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BTB1198N3

Código: AK

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.56 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 8 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 200 MHz

Capacitancia de salida (Cc): 11 pF

Ganancia de corriente contínua (hfe): 120

Empaquetado / Estuche: SOT23

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BTB1198N3 Datasheet (PDF)

1.1. btb1198n3.pdf Size:274K _cystek

BTB1198N3
BTB1198N3

Spec. No. : C824N3 Issued Date : 2006.06.06 CYStech Electronics Corp. Revised Date : 2013.12.13 Page No. : 1/7 PNP Epitaxial Planar Transistor BVCEO -80V IC -1A BTB1198N3 RCE(SAT) 320mΩ(typ.) Features • Low V , V = -0.16V (Typ.) @ I /I =-500mA/-50mA CE(SAT) CE(SAT) C B • High breakdown voltage, BV =-80V CEO • Complementary to BTD1782N3 • Pb-free and Halogen-f

3.1. btb1198k3.pdf Size:291K _cystek

BTB1198N3
BTB1198N3

Spec. No. : C824K3 Issued Date : 2008.10.31 CYStech Electronics Corp. Revised Date :2013.10.09 Page No. : 1/7 PNP Epitaxial Planar Transistor BTB1198K3 Features • Low V , V = -0.16V (Typ.) @ I /I =-500mA/-50mA CE(SAT) CE(SAT) C B • High breakdown voltage, BV =-100V CEO • Complementary to BTD1768K3 • Pb-free lead plating and halogen-free package Symbol Outline

3.2. btb1198a3.pdf Size:258K _cystek

BTB1198N3
BTB1198N3

Spec. No. : C824A3 Issued Date : 2007.02.28 CYStech Electronics Corp. Revised Date : 2012.12.27 Page No. : 1/7 PNP Epitaxial Planar Transistor BTB1198A3 Features • Low V , V = -0.16V (Typ.) @ I /I =-500mA/-50mA CE(SAT) CE(SAT) C B • High breakdown voltage, BV =-80V CEO • Complementary to BTD1768A3 • Pb-free lead plating and halogen-free package Symbol Outline

 3.3. btb1198m3.pdf Size:290K _cystek

BTB1198N3
BTB1198N3

Spec. No. : C824M3 Issued Date : 2007.05.04 CYStech Electronics Corp. Revised Date : 2014.02.24 Page No. : 1/6 General Purpose PNP Epitaxial Planar Transistor BTB1198M3 Features • High breakdown voltage, BV ≥ -100V CEO • Large continuous collector current capability • Low collector saturation voltage • Complementary to BTD5213M3 • Pb-free lead plating and ha

Otros transistores... BTB1184J3 , BTB1188AM3 , BTB1188M3 , BTB1188M3R , BTB1197N3 , BTB1198A3 , BTB1198K3 , BTB1198M3 , BC556 , BTB1199M3 , BTB1205I3 , BTB1216J3 , BTB1236A3 , BTB1236AE3 , BTB1236AFP , BTB1236AI3 , BTB1236AJ3 .

 

 
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