BTB1498N3 Todos los transistores

 ..1. Size:258K  cystek
 btb1498n3.pdf

Spec. No. C900N3 Issued Date 2009.12.23 CYStech Electronics Corp. Revised Date Page No. 1/6 Quadruple High Voltage PNP Epitaxial Planar Transistor Built-in Base Resistor BTB1498N3 Description High breakdown voltage. (BV =-400V) CEO Low saturation voltage, typical V =-0.3V at Ic/I =-20mA/-1mA. CE(sat) B Complementary to BTD2498N3 Pb-free package

 9.1. Size:229K  cystek
 btb1424at3.pdf

Spec. No. C817T3 Issued Date 2005.10.20 CYStech Electronics Corp. Revised Date 2014.02.17 Page No. 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB1424AT3 Features Low VCE(sat), typically -0.3V at IC / IB = -2A / -0.1A Excellent current gain characteristics Complementary to BTD2150AT3 Pb-free lead plating package Symbol Outline BTB1424AT3 TO-12

 9.2. Size:310K  cystek
 btb1424n3.pdf

Spec. No. C817N3-R Issued Date 2003.04.03 CYStech Electronics Corp. Revised Date 2013.03.04 Page No. 1/6 Low V PNP Epitaxial Planar Transistor CE(sat) BVCEO -50V IC -3A BTB1424N3 RCESAT(typ.) 0.125 Features Excellent DC current gain characteristics Low Saturation Voltage V =-0.25V(typ)(I =-2A, I =-100mA). CE(sat) C B Complementary to BTD2150N3

 9.3. Size:217K  cystek
 btb1424a3.pdf

Spec. No. C817A3-R Issued Date 2006.05.30 CYStech Electronics Corp. Revised Date 2008.04.24 Page 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB1424A3 Features Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD2150A3 Pb-free package Symbol Outline BTB1424A3 TO-92 B Base C Co

 9.4. Size:216K  cystek
 btb1424ad3.pdf

Spec. No. C817D3 Issued Date 2005.05.16 CYStech Electronics Corp. Revised Date 2011.08.15 Page No. 1/5 Low V PNP Epitaxial Planar Transistor CE(sat) BTB1424AD3 Features Excellent DC current gain characteristics Low Saturation Voltage, V =-0.3V(typ) @I =-2A, I =-100mA. CE(sat) C B Complementary to BTD2150AD3 Pb-free lead plating package Symbol Outl

 9.5. Size:247K  cystek
 btb1424am3.pdf

Spec. No. C817M3 Issued Date 2007.01.10 CYStech Electronics Corp. Revised Date 2013.08.12 Page No. 1/7 Low V PNP Epitaxial Planar Transistor CE(sat) BVCEO -50V IC -3A BTB1424AM3 RCESAT(typ) 0.12 Features Excellent DC current gain characteristics Low Saturation Voltage, V =-0.12V(typ) @I =-1A, I =-50mA. CE(sat) C B Complementary to BTD2150AM3 P

 9.6. Size:157K  cystek
 btb1426a3.pdf

Spec. No. C816A3-H Issued Date 2003.07.02 CYStech Electronics Corp. Revised Date Page No. 1/4 Low V PNP Epitaxial Planar Transistor CE(SAT) BTB1426A3 Description The BTB1426A3 is designed especially for use in strobo flash and medium power amplifier applications. Features High DC current gain and excellent h linearity. FE Low Saturation Voltage V =-0.5

 9.7. Size:243K  cystek
 btb1424l3.pdf

Spec. No. C817L3 Issued Date 2003.07.31 CYStech Electronics Corp. Revised Date 2011.02.25 Page No. 1/6 Low V PNP Epitaxial Planar Transistor CE(sat) BVCEO -50V IC -3A BTB1424L3 RCESAT(typ) 0.12 Features Excellent DC current gain characteristics Low Saturation Voltage V (sat)=-0.24V(typ) (I =-2A, I =-100mA). CE C B Complementary to BTD2150L3 P

 9.8. Size:251K  cystek
 btb1412j3.pdf

Spec. No. C816J3 Issued Date 2003.05.15 CYStech Electronics Corp. Revised Date 2013.04.18 Page No. 1/7 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -30V IC -5A BTB1412J3 RCESAT 75m typ. Features Low VCE(sat), VCE(sat)=-0.5 V (max), at IC / IB = -4A / -0.1A Excellent DC current gain characteristics Complementary to BTD2118J3 Pb-free lead p

 9.9. Size:231K  cystek
 btb1424fp.pdf

Spec. No. C817FP Issued Date 2011.01.13 CYStech Electronics Corp. Revised Date 2011.09.14 Page No. 1/6 Low V PNP Epitaxial Planar Transistor CE(sat) BVCEO -60V IC -3A BTB1424FP RCESAT(typ) 0.12 Features Excellent DC current gain characteristics Low Saturation Voltage, V =-0.12V(typ) @I =-1A, I =-50mA. CE(sat) C B Complementary to BTD2150FP Pb-

 9.10. Size:167K  cystek
 btb1427m3.pdf

Spec. No. C816M3-A Issued Date 2003.05.26 CYStech Electronics Corp. Revised Date 2005.11.28 Page No. 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB1427M3 Features Low VCE(sat), VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A Excellent DC current gain characteristics Symbol Outline BTB1427M3 SOT-89 B Base C Collector B C E E Emitter