BTB1498N3 Specs and Replacement
Type Designator: BTB1498N3
SMD Transistor Code: BE
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT23
- BJT ⓘ Cross-Reference Search
BTB1498N3 datasheet
..1. Size:258K cystek
btb1498n3.pdf 

Spec. No. C900N3 Issued Date 2009.12.23 CYStech Electronics Corp. Revised Date Page No. 1/6 Quadruple High Voltage PNP Epitaxial Planar Transistor Built-in Base Resistor BTB1498N3 Description High breakdown voltage. (BV =-400V) CEO Low saturation voltage, typical V =-0.3V at Ic/I =-20mA/-1mA. CE(sat) B Complementary to BTD2498N3 Pb-free package ... See More ⇒
9.1. Size:229K cystek
btb1424at3.pdf 

Spec. No. C817T3 Issued Date 2005.10.20 CYStech Electronics Corp. Revised Date 2014.02.17 Page No. 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB1424AT3 Features Low VCE(sat), typically -0.3V at IC / IB = -2A / -0.1A Excellent current gain characteristics Complementary to BTD2150AT3 Pb-free lead plating package Symbol Outline BTB1424AT3 TO-12... See More ⇒
9.2. Size:310K cystek
btb1424n3.pdf 

Spec. No. C817N3-R Issued Date 2003.04.03 CYStech Electronics Corp. Revised Date 2013.03.04 Page No. 1/6 Low V PNP Epitaxial Planar Transistor CE(sat) BVCEO -50V IC -3A BTB1424N3 RCESAT(typ.) 0.125 Features Excellent DC current gain characteristics Low Saturation Voltage V =-0.25V(typ)(I =-2A, I =-100mA). CE(sat) C B Complementary to BTD2150N3 ... See More ⇒
9.3. Size:217K cystek
btb1424a3.pdf 

Spec. No. C817A3-R Issued Date 2006.05.30 CYStech Electronics Corp. Revised Date 2008.04.24 Page 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB1424A3 Features Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A Excellent current gain characteristics Complementary to BTD2150A3 Pb-free package Symbol Outline BTB1424A3 TO-92 B Base C Co... See More ⇒
9.4. Size:216K cystek
btb1424ad3.pdf 

Spec. No. C817D3 Issued Date 2005.05.16 CYStech Electronics Corp. Revised Date 2011.08.15 Page No. 1/5 Low V PNP Epitaxial Planar Transistor CE(sat) BTB1424AD3 Features Excellent DC current gain characteristics Low Saturation Voltage, V =-0.3V(typ) @I =-2A, I =-100mA. CE(sat) C B Complementary to BTD2150AD3 Pb-free lead plating package Symbol Outl... See More ⇒
9.5. Size:247K cystek
btb1424am3.pdf 

Spec. No. C817M3 Issued Date 2007.01.10 CYStech Electronics Corp. Revised Date 2013.08.12 Page No. 1/7 Low V PNP Epitaxial Planar Transistor CE(sat) BVCEO -50V IC -3A BTB1424AM3 RCESAT(typ) 0.12 Features Excellent DC current gain characteristics Low Saturation Voltage, V =-0.12V(typ) @I =-1A, I =-50mA. CE(sat) C B Complementary to BTD2150AM3 P... See More ⇒
9.6. Size:157K cystek
btb1426a3.pdf 

Spec. No. C816A3-H Issued Date 2003.07.02 CYStech Electronics Corp. Revised Date Page No. 1/4 Low V PNP Epitaxial Planar Transistor CE(SAT) BTB1426A3 Description The BTB1426A3 is designed especially for use in strobo flash and medium power amplifier applications. Features High DC current gain and excellent h linearity. FE Low Saturation Voltage V =-0.5... See More ⇒
9.7. Size:243K cystek
btb1424l3.pdf 

Spec. No. C817L3 Issued Date 2003.07.31 CYStech Electronics Corp. Revised Date 2011.02.25 Page No. 1/6 Low V PNP Epitaxial Planar Transistor CE(sat) BVCEO -50V IC -3A BTB1424L3 RCESAT(typ) 0.12 Features Excellent DC current gain characteristics Low Saturation Voltage V (sat)=-0.24V(typ) (I =-2A, I =-100mA). CE C B Complementary to BTD2150L3 P... See More ⇒
9.8. Size:251K cystek
btb1412j3.pdf 

Spec. No. C816J3 Issued Date 2003.05.15 CYStech Electronics Corp. Revised Date 2013.04.18 Page No. 1/7 Low Vcesat PNP Epitaxial Planar Transistor BVCEO -30V IC -5A BTB1412J3 RCESAT 75m typ. Features Low VCE(sat), VCE(sat)=-0.5 V (max), at IC / IB = -4A / -0.1A Excellent DC current gain characteristics Complementary to BTD2118J3 Pb-free lead p... See More ⇒
9.9. Size:231K cystek
btb1424fp.pdf 

Spec. No. C817FP Issued Date 2011.01.13 CYStech Electronics Corp. Revised Date 2011.09.14 Page No. 1/6 Low V PNP Epitaxial Planar Transistor CE(sat) BVCEO -60V IC -3A BTB1424FP RCESAT(typ) 0.12 Features Excellent DC current gain characteristics Low Saturation Voltage, V =-0.12V(typ) @I =-1A, I =-50mA. CE(sat) C B Complementary to BTD2150FP Pb-... See More ⇒
9.10. Size:167K cystek
btb1427m3.pdf 

Spec. No. C816M3-A Issued Date 2003.05.26 CYStech Electronics Corp. Revised Date 2005.11.28 Page No. 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB1427M3 Features Low VCE(sat), VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A Excellent DC current gain characteristics Symbol Outline BTB1427M3 SOT-89 B Base C Collector B C E E Emitter ... See More ⇒
Detailed specifications: BTB1424A3, BTB1424AD3, BTB1424AM3, BTB1424AT3, BTB1424FP, BTB1424L3, BTB1424N3, BTB1427M3, BC548, BTB1580J3, BTB1580L3, BTB1580M3, BTB1590N3, BTB4110D3, BTB4511J3, BTB5140N3, BTB5213L3
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